Vapor deposition method for producing an organic EL panel

ABSTRACT

The present invention (i) uses a mask unit ( 80 ) including: a shadow mask ( 81 ) that has an opening ( 82 ) and that is smaller in area than a vapor deposition region ( 210 ) of a film formation substrate ( 200 ) and; a vapor deposition source ( 85 ) that has a emission hole ( 86 ) for emitting a vapor deposition particle, the emission hole ( 86 ) being provided so as to face the shadow mask ( 81 ), the shadow mask ( 81 ) and the vapor deposition source ( 85 ) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask ( 81 ) and the film formation substrate ( 200 ), (iii) moves at least a first one of the mask unit ( 80 ) and the film formation substrate ( 200 ) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit ( 80 ) and the film formation substrate ( 200 ), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region ( 210 ) through the opening ( 82 ) of the shadow mask ( 81 ). This makes it possible to form a high-resolution vapor deposition pattern on a large-sized substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This is application is a divisional of U.S. patent application Ser. No.13/395,879, filed internationally on Sep. 10, 2010, which is a U.S.National Phase patent application of PCT/JP2010/065641, filed Sep. 10,2010, which claims priority to Japanese patent application no.2009-213570, filed Sep. 15, 2009, Japanese patent application no.2009-265685, filed Nov. 20, 2009, and Japanese patent application no.2009-276415, filed Dec. 4, 2009.

TECHNICAL FIELD

The present invention related to a vapor deposition method and a vapordeposition device, each involving use of a vapor deposition mask.

BACKGROUND ART

Recent years have witnessed practical use of a flat-panel display invarious products and fields. This has led to a demand for a flat-paneldisplay that is larger in size, achieves higher image quality, andconsumes less power.

Under such circumstances, great attention has been drawn to an organicEL display device that (i) includes an organic electroluminescence(hereinafter abbreviated to “EL”) element which uses EL of an organicmaterial and that (ii) is an all-solid-state flat-panel display which isexcellent in, for example, low-voltage driving, high-speed response, andself-emitting.

An organic EL display device includes, for example, (i) a substrate madeup of members such as a glass substrate and TFTs (thin film transistors)provided to the glass substrate and (ii) organic EL elements provided onthe substrate and connected to the TFTs.

An organic EL element is a light-emitting element capable ofhigh-luminance light emission based on low-voltage direct-currentdriving, and includes in its structure a first electrode, organic ELlayer, and a second electrode stacked on top of one another in thatorder, the first electrode being connected to a TFT. The organic ELlayer between the first electrode and the second electrode is an organiclayer including a stack of layers such as a hole injection layer, a holetransfer layer, an electron blocking layer, a luminous layer, a holeblocking layer, an electron transfer layer, and an electron injectionlayer.

A full-color organic EL display device typically includes organic ELelements of red (R), green (G), and blue (B) as sub-pixels aligned on asubstrate. The full-color organic EL display device carries out an imagedisplay by, with use of TFTs, selectively causing the organic ELelements to each emit light with a desired luminance.

Such an organic EL display device is produced through a process thatforms, for each organic EL element serving as a light-emitting element,a pattern of a luminous layer made of an organic luminescent materialwhich emits light of at least the above three colors (see, for example,Patent Literatures 1 to 3).

Such formation of luminous layer pattern is performed by a method suchas (i) a vacuum vapor deposition method that uses a vapor depositionmask referred to as a shadow mask, (ii) an inject method, and (iii) alaser transfer method.

The production of, for example, a low-molecular organic EL display(OLED) has conventionally used a vapor deposition method involving ashadow mask, the vapor deposition method forming organic layers bydiscriminative application.

The vacuum vapor deposition method involving a shadow mask uses a shadowmask (full-cover contact type shadow mask) that is so sized as to allowvapor deposition to be performed throughout the entire vapor depositionregion of a substrate (see, for example, Patent Literatures 4 to 7). Theshadow mask is typically equivalent in size to the substrate.

FIG. 22 is a cross-sectional view schematically illustrating aconfiguration of a conventional vapor deposition device involving ashadow mask.

The vacuum vapor deposition method involving a shadow mask, asillustrated in FIG. 22, forms a pattern by (i) placing a substrate 301and a vapor deposition source 302 at such positions that the substrate301 and the vapor deposition source 302 face each other, (ii) forming,in a shadow mask 303, openings 304 corresponding to a pattern of aportion of a target vapor deposition region so that no vapor depositionparticles are adhered to a region other than the vapor depositionregion, and (iii) depositing vapor deposition particles onto thesubstrate 301 through the openings 304.

The substrate 301 is placed in a vacuum chamber (not shown). The vapordeposition source 302 is fixed below the substrate 301. The shadow mask303 is either fixed in close contact with the substrate 301 or movedrelative to the substrate 301 while the substrate 301 and the vapordeposition source 302 are fixed to an inner wall of the vacuum chamber(see, for example, Patent Literatures 1, 2, 8 and 9).

Patent Literature 1, for example, discloses a method that involves aload-lock vapor deposition source, the method (i) aligning a mask and asubstrate with each other, next (ii) performing vacuum vapor depositionof a first luminescent material from directly below the substrate toform an arrangement of first light-emitting sections each substantiallyidentical in shape to an opening of the mask, then (iii) shifting themask, and (iv) performing vacuum vapor deposition of a secondluminescent material from directly below the substrate to form anarrangement of second light-emitting sections each substantiallyidentical in shape to the opening of the mask.

Patent Literature 2 discloses a method involving a partition wall thatis so provided on a substrate to which display electrodes are providedas to protrude from the substrate and surround the display electrodes,the method (i) placing a mask on a top surface of the partition wall,(ii) depositing an organic EL medium on the display electrodessurrounded by the partition wall, then (iii) shifting the mask so thatan opening of the mask is shifted from the position directly above adisplay electrode to the position directly above an adjacent displayelectrode, thereby sequentially forming luminous layers eachsubstantially identical in shape to the opening of the mask.

Patent Literature 8 discloses a vapor deposition method involving avapor deposition source, the method (i) placing a metal mask closely toa substrate and (ii) simultaneously carrying the metal mask and thesubstrate.

The vacuum vapor deposition method involving a shadow mask is used notonly to form a luminous layer but also to form an electrode pattern.

Patent Literature 9, for example, discloses a method for forming anelectrode pattern, the method (i) aligning, in a mask equivalent in sizeto a substrate, short-diameter holes or long and narrow slit pores in adirection which intersects a direction in which the mask is shifted and(ii) performing vapor deposition of an electrode material while the maskis shifted.

In the vacuum vapor deposition method involving a shadow mask asdescribed above, the shadow mask is fixed (for example, welded) to amask frame under tension for prevention of, for example, bending anddistortion.

The vacuum vapor deposition method involving a shadow mask forms aluminous layer pattern or an electrode pattern by (i) closely contactinga shadow mask such as the above with a substrate and (ii) causing vapordeposition particles from a vapor deposition source to be deposited(adhered) onto a desired position of the substrate through an opening ofthe shadow mask.

CITATION LIST

Patent Literature 1

Japanese Patent Application Publication, Tokukai, No. 2000-188179 A(Publication Date: Jul. 4, 2000) [corresponding U.S. Pat. No. 6,294,892;Publication Date: Sep. 25, 2001]

Patent Literature 2

Japanese Patent Application Publication, Tokukaihei, No. 8-227276 A(Publication Date: Sep. 3, 1996) [corresponding U.S. Pat. No. 5,742,129;Publication Date: Apr. 21, 1998]

Patent Literature 3

Japanese Patent Application Publication, Tokukaihei, No. 9-167684 A(Publication Date: Jun. 24, 1997) [corresponding U.S. Pat. No.5,688,551; Publication Date: Nov. 18, 1997]

Patent Literature 4

Japanese Patent Application Publication, Tokukai, No. 2003-68453 A(Publication Date: Mar. 7, 2003)

Patent Literature 5

Japanese Patent Application Publication, Tokukai, No. 2003-272839 A(Publication Date: Sep. 26, 2003)

Patent Literature 6

Japanese Patent Application Publication, Tokukai, No. 2003-332056 A(Publication Date: Nov. 21, 2003)

Patent Literature 7

Japanese Patent Application Publication, Tokukaihei, No. 10-41069 A(Publication Date: Feb. 13, 1998)

Patent Literature 8

Japanese Patent Application Publication, Tokukai, No. 2001-93667 A(Publication Date: Apr. 6, 2001)

Patent Literature 9

Japanese Patent Application Publication, Tokukaihei, No. 10-102237 A(Publication Date: Apr. 21, 1998)

Patent Literature 10

Japanese Patent Application Publication, Tokukai, No. 2004-649101 A(Publication Date: Dec. 9, 2004)

Patent Literature 11

Japanese Patent Application Publication, Tokukai, No. 2002-175878 A(Publication Date: Jun. 21, 2002)

SUMMARY OF INVENTION Technical Problem

Unfortunately, a larger substrate size requires the shadow mask 303 tobe larger in size as well.

Such a larger size results in, as illustrated in FIG. 23, a gap openingbetween the substrate 301 and the shadow mask 303 due to, for example,self-weight bending and elongation of the shadow mask 303. This makersit impossible to form a pattern with high positional accuracy, and thuscauses, for example, misplacement in vapor deposition and color mixture,thereby making it difficult to achieve high resolution.

Further, a larger substrate size requires the shadow mask 303 and a maskframe that holds it to be both extremely large and heavy. This in turnrequires a device that uses the shadow mask 303 to be extremely largeand complex, which not only makes it difficult to design such a device,but also causes a safety problem in handling the shadow mask during aproduction step or a step such as replacing the shadow mask.

It is, in consequence, extremely difficult to form a pattern of alarge-sized substrate with use of a large-sized shadow mask.

A process of producing an organic EL display device requires a substratesize of approximately 1 m per side in order to use an existing massproduction process of the vapor deposition method involving a full-covercontact type shadow mask. It is difficult to use the vapor depositionmethod for a large-sized substrate having a substrate size larger thanapproximately 1 m per side. This indicates that there currently existsno established organic layer discriminative application technique thatis usable for a large-sized substrate. It is thus impossible tomass-produce a large-sized organic EL display device of a 60-inch classof a larger size.

Further, pattern formation based on the inkjet method causes, forexample, color mixture between adjacent sub-pixels because of finerpatterns, and only has a limited patterning accuracy in, for example,controlling a liquid drop position.

The inkjet method typically uses an organic luminescent material made ofa high molecule. Such a high-molecular luminescent material is, however,difficult to develop in some respects, and is at present problematicallyinferior in light emission property and life to a low-molecularluminescent material.

The inkjet method additionally requires a particular arrangement so thatno foundation layer will dissolve in a solvent of a material used toform an upper layer. The inject method thus does not make it possible touse an arbitrary foundation layer.

The inkjet method also requires a long tact time for formation of apattern on a large-sized substrate because of an increased number ofejected droplets and an expansion of an ejection range. Further, theinkjet method causes a large variation in film thickness and filmflatness, depending on how well a solvent of the ejected liquid isdried. The inkjet method thus tends to result in display irregularityoccurring in a display device produced.

The laser transfer method involving a source of light such as laserlight uses (i) a donor substrate including a light-heat converting layerand an organic donor layer and (ii) a film formation substrateincluding, for example, first electrodes and sub-pixels, the donorsubstrate and the film formation substrate being placed so that theorganic donor layer of the donor substrate faces the electrodes and thelike of the film formation substrate. Irradiating the light-heatconverting layer of the donor substrate with laser light causes thelight-heat converting layer to absorb optical energy and convert it intoheat. Scanning a desired region with the laser light during theirradiation causes the organic donor layer to vaporize in acorresponding region, which forms a pattern of an organic layer on thefilm formation substrate. The laser transfer method thus makes itpossible to selectively transfer a luminous layer to regionscorresponding respectively to the first electrodes.

The laser transfer method, however, requires laser scanning to beperformed as many times as the number of sub-pixel lines, and thusrequires a long tact time.

The laser transfer method causes a formed film to be non-uniform in filmthickness when having problems with, for example, (i) stability of alaser light source and/or (ii) non-uniformity in beam profile due to,for example, deflection arising from mechanical scanning and/or a changein focal length. This leads to display irregularity occurring in aresulting display device produced. The laser transfer method thus posesa lot of problems in handling a larger size substrate and in massproduction.

As described above, none of the above pattern formation methods willfacilitate forming a pattern of an organic layer on a large-sizedsubstrate, particularly an eighth-generation substrate (approximately,2,160 mm×2,460 mm) or newer. Further, the above pattern formationmethods all pose a problem in mass production.

As described above, there has been known no production technique orproduction device that allows a pattern of an organic layer to be formedon a large-sized substrate. The constraint in substrate size hasprevented production of a large-sized organic EL display device.

A larger substrate size normally allows a larger number of panels to beformed from a single substrate, and thus reduces the unit cost of apanel. This means that a larger sized substrate allows an organic ELdisplay device to be produced at a lower cost. Conventionally, however,the above constraint in substrate size has prevented production of alow-cost organic EL display device.

Recent years have seen a proposal of a method that uses a vapordeposition mask which is smaller in size than a film formationsubstrate, the method (i) performing vapor deposition while shifting thevapor deposition mask and a vapor deposition source relative to the filmformation substrate so that a large-sized substrate is used as the filmformation substrate, and (ii) producing a large-sized, organic ELdisplay device on such a film formation substrate (see PatentLiteratures 10 and 11).

(a) of FIG. 62 is a plan view schematically illustrating a vapordeposition device disclosed in Patent Literature 10, (b) of FIG. 62 is across-sectional view of the vapor deposition device, taken along theline in (a) of FIG. 62.

The vapor deposition device 310 of Patent Literature 10, as illustratedin (a) and (b) of FIG. 62, includes: a vapor deposition source 311; avapor deposition source container 312 that contains the vapor depositionsource 311; and a ball screw 313 to which the vapor deposition sourcecontainer 312 is attached. Circular movement of the ball screw 313 aboutan axis can move the vapor deposition source container 312 in thelong-axis direction of the ball screw 313 along a linear guide 314.

The vapor deposition device 310 further includes: a mask holding section315 above the vapor deposition source container 312; and a vapordeposition mask 316 fixed to the mask holding section 315.

The vapor deposition device 310 also includes a film formation substrate317 that is so held by a substrate holding section 318 as to have avapor deposition surface facing the vapor deposition source 311.

The vapor deposition source 311 and the vapor deposition mask 316 are(i) moved together in the long-axis direction of the ball screw 313 inresponse to movement of the vapor deposition source container 312 whichmovement is caused by circular movement of the ball screw 313, and arethus (ii) shifted relative to the film formation substrate 317.

The film formation substrate 317 and the vapor deposition mask 316, toprevent themselves from being damaged when the vapor deposition source311 and the vapor deposition mask 316 are shifted relative to the filmformation substrate 317 as described above, need to be separated fromeach other by a void so as not to be in contact with each other.

This void needs to be maintained at a constant amount; otherwise, avapor deposition pattern obtained is mispositioned, which in turn makesit impossible to form a high-resolution vapor deposition patternthroughout the entire vapor deposition region of the film formationsubstrate 317.

The amount of the void, however, is changed by factors such as (i)self-weight bending of the film formation substrate 317, (ii) accuracyof the vapor deposition device 310 itself, and (iii) thermal expansionof members (particularly, the film formation substrate 317 and the vapordeposition mask 316).

The vapor deposition device of Patent Literature 10, is, however, merelyarranged as illustrated in (a) and (b) of FIG. 62 such that the filmformation substrate 317 is held by the substrate holding section 318 at(i) an end section on a start-end side of the direction in which thevapor deposition source container is moved and (ii) an end section on arear-end side of the same direction. Patent Literature 10 thus fails toconsider the change in the amount of the void, the change being causedby, for example, self-weight bending and/or thermal expansion of thefilm formation substrate 317. Similarly, as illustrated in (a) and (b)of FIG. 62, the vapor deposition mask 316 is also only simply placed onthe mask holding section 315 of the vapor deposition source container312. This indicates that the vapor deposition mask 316 is merelysupported by the mask holding section 315 at a peripheral portion of itslower surface.

As described above, Patent Literature 10 includes no mechanism forcontrolling the amount of the void. The method disclosed in PatentLiterature 10 thus cannot maintain the void at a constant amount, andunfortunately causes, for example, blurring in a vapor depositionpattern (that is, variation in pattern width) and mispositioning of avapor deposition pattern. The vapor deposition device 310 disclosed inPatent Literature 10, in consequence, fails to form, throughout theentire vapor deposition region, a high-resolution vapor depositionpattern necessary for a display device such as an organic EL displaydevice.

Patent Literature 11 discloses a vapor deposition method that (i) uses avapor deposition mask smaller in size than a film formation substrateand that (ii) covers, with a mask support that supports an endsection(s) of the vapor deposition mask, a region of the film formationsubstrate which region is not covered by the vapor deposition mask. Themethod thus divides a single large-sized substrate into a plurality ofregions to perform vapor deposition.

Patent Literature 11 discloses that (i) in the case where the vapordeposition mask is a metal mask, it is fixed by a fixing sectionmechanism to a mask supporting section of a mask support, and that (ii)the metal mask becomes fixed while it is being pulled in a directiontoward its periphery. Patent Literature 11 further discloses increasingthe thickness of the vapor deposition mask for greater strength toreduce self-weight bending of the vapor deposition mask.

Patent Literature 11, however, fails to provide any particulararrangement for the change in the amount of the void, the change beingcaused by thermal expansion of, for example, the vapor deposition maskand/or the film formation substrate. In addition, Patent Literature 11fails to disclose information on how the film formation substrate isheld. It is unrealistic to increase the thickness of the film formationsubstrate as with the vapor deposition mask in order to reduceself-weight bending of the film formation substrate.

As described above, Patent Literature 11 also fails to consider thechange in the amount of the void, the change being caused by (i) thermalexpansion of, for example, the film formation substrate and/or the vapordeposition mask or (ii) self-weight bending of the film formationsubstrate. Patent Literature 11 thus fails to disclose a mechanism forcontrolling the void amount. As described above, Patent Literature 11 aswell as Patent Literature 10 fails to maintain the void at a constantamount, and consequently fails to form, throughout the entire vapordeposition region, a high-resolution vapor deposition pattern necessaryfor a display device such as an organic EL display device.

The present invention has been accomplished in view of the aboveproblem. It is an object of the present invention to provide (i) a vapordeposition method and a vapor deposition device each of which makes itpossible to form a high-resolution vapor deposition pattern on alarge-sized substrate and (ii) a method for producing an organic ELdisplay device which method uses the vapor deposition method or thevapor deposition device.

Solution to Problem

In order to solve the above problems, a vapor deposition method of thepresent invention is a vapor deposition method for forming, on a filmformation substrate, vapor deposition film having a predeterminedpattern, the vapor deposition method including the steps of: (A) (i)preparing a mask unit including: a vapor deposition mask that has anopening and that is smaller in area than a vapor deposition region ofthe film formation substrate; and a vapor deposition source that has anemission hole for emitting a vapor deposition particle, the emissionhole being provided so as to face the vapor deposition mask, the vapordeposition mask and the vapor deposition source being fixed in positionrelative to each other, and (ii) aligning the mask unit and the filmformation substrate with each other by adjusting an amount of a voidbetween the vapor deposition mask and the film formation substrate sothat the vapor deposition mask faces the film formation substrate in astate in which the vapor deposition mask is separated from the filmformation substrate by a uniform void; and (B) (i) moving at least afirst one of the mask unit and the film formation substrate relative toa second one thereof while uniformly maintaining a void between the maskunit and the film formation substrate, and (ii) sequentially depositingthe vapor deposition particle through the opening of the vapordeposition mask onto the vapor deposition region of the film formationsubstrate.

In order to solve the above problems, a vapor deposition device of thepresent invention is a vapor deposition device for forming, on a filmformation substrate, a film having a predetermined pattern, the vapordeposition device including: a mask unit provided so as to face the filmformation substrate and so as to include: a vapor deposition mask thathas an opening and that is smaller in area than a vapor depositionregion of the film formation substrate; and a vapor deposition sourcethat has an emission hole for emitting a vapor deposition particle, theemission hole being provided so as to face the vapor deposition mask,the vapor deposition mask and the vapor deposition source being fixed inposition relative to each other; and moving means for moving at least afirst one of the mask unit and the film formation substrate relative toa second one thereof while maintaining a uniform void between the maskunit and the film formation substrate.

Advantageous Effects of Invention

The arrangements above are each different from conventional art in thatthe vapor deposition mask and the film formation substrate are not fixedto each other and that the vapor deposition mask and the vapordeposition source are fixed in position relative to each other. Thismakes it possible to carry out vapor deposition by (i) using, asdescribed above, a vapor deposition mask smaller in area than the vapordeposition region of the film formation substrate and (ii) moving atleast a first one of the mask unit and the film formation substraterelative to a second one thereof.

The above arrangements each thus prevent the problem of, for example,self-weight bending and elongation due to a large-sized vapor depositionmask, and consequently make it possible to not only form a pattern of anorganic layer on a large-sized substrate, but also form such a patternwith high positional accuracy and high resolution.

The arrangements above each use a vapor deposition mask smaller in areathan the vapor deposition region of the film formation substrate asdescribed above. This can reduce or prevent problems caused by a framefor holding a vapor deposition mask which frame is extremely large andextremely heavy due to a large-sized vapor deposition mask.

The arrangements above can each carry out vapor deposition by moving atleast a first one of the mask unit and the film formation substraterelative to a second one thereof while maintaining the void between themask unit and the film formation substrate, and thus form a filmformation pattern (vapor deposition film) that is uniform in width andfilm thickness.

The void between the mask unit and the film formation substrate preventsthe film formation substrate from coming into contact with the vapordeposition mask, and thus prevents the film formation substrate frombeing damaged by the vapor deposition mask. The arrangements above eachthus eliminate the need to form on the film formation substrate a maskspacer for preventing such damage, and can reduce costs as well.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view illustrating a film formation substrate and a maskunit inside a vacuum chamber of a vapor deposition device according toEmbodiment 1 of the present invention, the plan view being taken from aback surface side of the film formation substrate.

FIG. 2 is a bird's eye view illustrating main constituent elementsinside the vacuum chamber of the vapor deposition device according toEmbodiment 1 of the present invention.

FIG. 3 is a cross-sectional view schematically illustrating aconfiguration of a main part of the vapor deposition device according toEmbodiment 1 of the present invention.

FIG. 4 is a block diagram partially illustrating a configuration of thevapor deposition device according to Embodiment 1 of the presentinvention.

FIG. 5

(a) through (d) are each a diagram illustrating example shapes ofalignment markers provided to the film formation substrate and a vapordeposition mask according to Embodiment 1 of the present invention.

FIG. 6 is a cross-sectional view schematically illustrating aconfiguration of an organic EL display device for carrying out an RGBfull color display.

FIG. 7 is a plan view illustrating an arrangement of pixels constitutingthe organic EL display device illustrated in FIG. 6.

FIG. 8 is a cross-sectional view, taken along line A-A, illustrating aTFT substrate in the organic EL display device illustrated in FIG. 7.

FIG. 9 is a flowchart indicating successive steps for producing theorganic EL display device according to Embodiment 1 of the presentinvention.

FIG. 10 is a flowchart indicating an example method for forming apredetermined pattern on a TFT substrate with use of the vapordeposition device according to Embodiment 1 of the present invention.

FIG. 11 is a flowchart indicating an alignment adjustment method.

FIG. 12 is a flowchart indicating a flow of a vapor deposition controlcarried out when vapor deposition is turned OFF.

FIG. 13 is a flowchart indicating a flow of a vapor deposition controlcarried out when vapor deposition is turned ON.

FIG. 14 is a cross-sectional view illustrating a variation of an organicEL display device according to Embodiment 2 of the present invention.

FIG. 15 is a flowchart indicating successive steps for producing theorganic EL display device illustrated in FIG. 14.

FIG. 16

(a) through (c) are each a plan view illustrating an alignment carriedout between a TFT substrate and the shadow mask when vapor deposition iscarried out for red sub-pixels, green sub-pixels, or blue sub-pixels,where (a) is a plan view taken when vapor deposition is carried out forred sub-pixels, (b) is a plan view taken when vapor deposition iscarried out for green sub-pixels, and (c) is a plan view taken whenvapor deposition is carried out for blue sub-pixels.

FIG. 17 is a bird's eye view illustrating main constituent elementsinside a vacuum chamber of a vapor deposition device according toEmbodiment 3 of the present invention.

FIG. 18 is a cross-sectional view schematically illustrating aconfiguration of a main part inside the vacuum chamber of the vapordeposition device according to Embodiment 3 of the present invention.

FIG. 19

(a) is a plan view illustrating a positional relationship observed, whenvapor deposition is carried out, between a mask unit and a filmformation substrate inside a vacuum chamber of a vapor deposition deviceaccording to Embodiment 4 of the present invention, and (b) and (c) areeach a diagram illustrating an example substrate scanning direction withan arrow.

FIG. 20 is a plan view illustrating a positional relationship observed,when vapor deposition is carried out, between a mask unit and a filmformation substrate inside a vacuum chamber of a vapor deposition deviceaccording to Embodiment 5 of the present invention.

FIG. 21 is a plan view illustrating a relation between (i) the long-axisdirection of openings of a shadow mask of a mask unit according toEmbodiment 6 of the present invention and (ii) a substrate scanningdirection.

FIG. 22 is a cross-sectional view schematically illustrating aconfiguration of a conventional vapor deposition device including ashadow mask.

FIG. 23 is a cross-sectional view illustrating a problem involved in aconventional vapor deposition method.

FIG. 24 is a plan view illustrating a film formation substrate and amask unit inside a vacuum chamber of a vapor deposition device accordingto Embodiment 7 of the present invention, the plan view being taken froma back surface side of the film formation substrate.

FIG. 25 is a cross-sectional view schematically illustrating aconfiguration of a main part inside the vacuum chamber of the vapordeposition device according to Embodiment 7 of the present invention.

FIG. 26 is a plan view illustrating a film formation substrate and amask unit inside a vacuum chamber of vapor deposition device accordingto Embodiment 8 of the present invention, the plan view being taken froma back surface side of the film formation substrate.

FIG. 27 is a cross-sectional view schematically illustrating aconfiguration of a main part inside the vacuum chamber of the vapordeposition device according to Embodiment 8 of the present invention.

FIG. 28 is a plan view illustrating an absolute alignment of a vapordeposition mask.

FIG. 29 is a block diagram partially illustrating a configuration of thevapor deposition device according to Embodiment 8 of the presentinvention.

FIG. 30 is a cross-sectional view schematically illustrating aconfiguration of a main part inside the vacuum chamber for a case inwhich alignment markers for an absolute alignment are provided to thevapor deposition device illustrated in FIG. 3.

FIG. 31 is a cross-sectional view schematically illustrating aconfiguration of a main part inside a vacuum chamber of a vapordeposition device according to Embodiment 9 of the present invention.

FIG. 32 is a cross-sectional view schematically illustrating aconfiguration of a main part inside a vacuum chamber of a vapordeposition device according to Embodiment 10 of the present invention.

FIG. 33 is a plan view illustrating a film formation substrate and amask unit inside a vacuum chamber of a vapor deposition device accordingto Embodiment 11 of the present invention, the plan view being takenfrom a back surface side of the film formation substrate.

FIG. 34 is a cross-sectional view schematically illustrating aconfiguration of a main part inside the vacuum chamber of the vapordeposition device according to Embodiment 11 of the present invention.

FIG. 35 is a cross-sectional view schematically illustrating aconfiguration of a main part inside the vacuum chamber of the vapordeposition device according to Embodiment 11 of the present invention.

FIG. 36 is a plan view illustrating a vapor deposition pattern of a filmformation substrate for a case in which there has occurredmispositioning between the film formation substrate and a vapordeposition mask.

FIG. 37 is a cross-sectional view schematically illustrating aconfiguration of a main part of a vapor deposition device according toEmbodiment 12 of the present invention.

FIG. 38 is a bird's eye view illustrating main constituent elementsinside a vacuum chamber of the vapor deposition device illustrated inFIG. 37.

FIG. 39 is a plan view illustrating a positional relationship between analignment pattern and vapor deposition pattern of the film formationsubstrate and a positional relationship between an alignment sensor anda film thickness sensor, the plan view being taken from a back surfaceside of the film formation substrate used in Embodiment 12 of thepresent invention.

FIG. 40 is a block diagram partially illustrating a configuration of thevapor deposition device illustrated in FIG. 37.

FIG. 41 is another block diagram partially illustrating theconfiguration of the vapor deposition device illustrated in FIG. 37.

FIG. 42

(a) is a plan view schematically illustrating an arrangement of a mainpart of an alignment marker section of the film formation substrateillustrated in FIG. 39, and (b) is a plan view illustrating a positionalrelationship between individual alignment markers in the alignmentmarker section of the film formation substrate illustrated in (a),alignment markers of the vapor deposition mask, and laser spots.

FIG. 43 is a graph illustrating a relation between the intensity ofreflection of laser light and a period of scanning the film formationsubstrate, the graph being obtained from the relation between thealignment markers of the film formation substrate and the alignmentmarkers of the vapor deposition mask illustrated in (b) of FIG. 42.

FIG. 44 is a graph illustrating a relation between the intensity ofreflection and the period of scanning the film formation substrate, therelation being observed after the start of scanning the film formationsubstrate.

FIG. 45 is a plan view illustrating alignment markers of the filmformation substrate which have a varying discontinuous cycle.

FIG. 46 is a block diagram partially illustrating a configuration of avapor deposition device according to Embodiment 13 of the presentinvention.

FIG. 47

(a) is a plan view schematically illustrating an arrangement of a mainpart of an alignment marker section of the film formation substrateillustrated in FIG. 39, and (b) is a plan view illustrating a positionalrelationship between individual alignment markers in the alignmentmarker section illustrated in (a) and alignment markers of the vapordeposition mask.

FIG. 48 is a cross-sectional view schematically illustrating aconfiguration of a main part of a vapor deposition device according toEmbodiment 14 of the present invention.

FIG. 49 is a block diagram partially illustrating a configuration of thevapor deposition device illustrated in FIG. 48.

FIG. 50

(a) through (c) are each a plan view illustrating a method for measuringthe amount of misalignment, in Embodiment 14 of the present invention,on the basis of a relation between an alignment marker provided to thefilm formation substrate in advance and a vapor deposition patternactually deposited on the film formation substrate.

FIG. 51

(a) through (c) are each a plan view illustrating a method for measuringthe amount of misalignment, in Embodiment 15 of the present invention,on the basis of a relation between an alignment marker provided to thefilm formation substrate in advance and a vapor deposition pattern of avapor deposition film actually deposited on the film formationsubstrate.

FIG. 52 is a block diagram partially illustrating a configuration of thevapor deposition device according to Embodiment 15 of the presentinvention.

FIG. 53

(a) and (b) are each a diagram illustrating a relation between anopening of a vapor deposition mask and a vapor deposition width andvapor deposition position of a vapor deposition film for a case in whichthere is provided a void between a film formation substrate and thevapor deposition mask.

FIG. 54 is a cross-sectional view schematically illustrating aconfiguration of a main part of a vapor deposition device according toEmbodiment 16 of the present invention.

FIG. 55 is a bird's eye view illustrating example main constituentelements inside a vacuum chamber of the vapor deposition deviceillustrated in FIG. 54.

FIG. 56 is a block diagram partially illustrating a configuration of thevapor deposition device illustrated in FIG. 54.

FIG. 57 is a flowchart indicating an example method for forming apredetermined pattern on a TFT substrate with use of the vapordeposition device according to Embodiment 16 of the present invention.

FIG. 58 is a flowchart indicating another example method for forming apredetermined pattern on a TFT substrate with use of the vapordeposition device according to Embodiment 16 of the present invention.

FIG. 59 is a bird's eye view illustrating other example main constituentelements inside a vacuum chamber of the vapor deposition deviceillustrated in FIG. 54.

FIG. 60 is a bird's eye view illustrating example main constituentelements inside a vacuum chamber of a vapor deposition device accordingto Embodiment 17 of the present invention.

FIG. 61 is a plan view illustrating a void sensing transmitting regionin the film formation substrate used in Embodiment 17 of the presentinvention.

FIG. 62

(a) is a plan view schematically illustrating a vapor deposition devicedisclosed in Patent Literature 10, and (b) is a cross-sectional view,taken along an arrow, illustrating the vapor deposition deviceillustrated in (a).

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention are described below in detail.

Embodiment 1

An embodiment of the present invention is described below with referenceto FIGS. 1 through 13.

The present embodiment describes, as an example vapor deposition method,involving a vapor deposition device of the present embodiment, a methodfor producing an organic EL display device that (i) is of a bottomemission type, that is, extracts light from a TFT substrate side, andthat (ii) carries out an RGB full color display.

The description first deals with the overall configuration of theorganic EL display device.

FIG. 6 is a cross-sectional view schematically illustrating aconfiguration of the organic EL display device that carries out an RGBfull color display. FIG. 7 is a plan view illustrating an arrangement ofpixels included in the organic EL display device illustrated in FIG. 6.FIG. 8 is a cross-sectional view, taken long line A-A in FIG. 7, of aTFT substrate included in the organic EL display device illustrated inFIG. 7.

As illustrated in FIG. 6, the organic EL display device 1 produced inthe present embodiment includes: a TFT substrate 10 including TFTs 12(see FIG. 8); an organic EL element 20 provided on the TFT substrate 10and connected to the TFTs 12; an adhesive layer 30; and a sealingsubstrate 40 arranged in that order.

The organic EL element 20, as illustrated in FIG. 6, is containedbetween the TFT substrate 10 and the sealing substrate 40 by attachingthe TFT substrate 10, on which the organic EL element 20 is provided, tothe sealing substrate 40 with use of the sealing substrate 40.

The organic EL display device 1, in which the organic EL element 20 iscontained between the TFT substrate 10 and the sealing substrate 40 asdescribed above, prevents infiltration of oxygen, moisture and the likepresent outside into the organic EL element 20.

As illustrated in FIG. 8, the TFT substrate 10 includes, as a supportingsubstrate, a transparent insulating substrate 11 such as a glasssubstrate. The insulating substrate 11 is, as illustrated in FIG. 7,provided with a plurality of wires 14 including (i) a plurality of gatelines laid in the horizontal direction and (ii) a plurality of signallines laid in the vertical direction and intersecting with the gatelines. The gate lines are connected to a gate line driving circuit (notshown in the drawings) that drives the gate lines, whereas the signallines are connected to a signal line driving circuit (not shown in thedrawings) that drives the signal lines.

The organic EL display device 1 is full-color, active matrix organic ELdisplay device. The organic EL display device 1 includes, on theinsulating substrate 11 and in regions defined by the wires 14,sub-pixels 2R, 2G, and 2B arranged in a matrix which include organic ELelements 20 of red (R), green (G), and blue (B), respectively.

In other words, the regions defined by the wires 14 each (i) correspondto a single sub-pixel (dot) and (ii) provide a light-emitting region ofR, G, or B for each sub-pixel.

FIG. 7 illustrates a pixel 2 (that is, a single pixel) that includesthree sub-pixels: a red sub-pixel 2R transmitting red light; a greensub-pixel 2G transmitting green light; and a blue sub-pixel 2Btransmitting blue light.

The sub-pixels 2R, 2G, and 2B include, as light-emitting regions of therespective colors which light-emitting regions perform light emission ofthe respective sub-pixels 2R, 2G, and 2B, openings 15R, 15G, and 15Bthat are covered respectively by stripe-shaped luminous layers 23R, 23G,and 23B of the respective colors.

The luminous layers 23R, 23G, and 23B are each formed in a pattern byvapor deposition. The openings 15R, 15G, and 15B are described below indetail.

The sub-pixels 2R, 2G, and 2B include respective TFTs 12 each connectedto a first electrode 21 of the organic EL element 20. The sub-pixels 2R,2G, and 2B each have an emission intensity that is determined by scanthrough the wires 14 and selection of the TFTs 12. As described above,the organic EL display device 1 carries out an image display byselectively causing the organic EL element 20 to emit, by use of theTFTs 12, light with desired luminance.

The following describes in detail respective configurations of the TFTsubstrate 10 and the organic EL element 20 both included in the organicEL display device 1.

The description below first deals with the TFT substrate 10.

The TFT substrate 10, as illustrated in FIG. 8, includes on atransparent insulating substrate 11 such as a glass substrate: TFTs 12(switching elements) and wires 14; an interlayer film 13 (interlayerinsulating film; planarizing film); and an edge cover 15, formed in thatorder.

The insulating substrate 11 is provided thereon with (i) wires 14 and(ii) TFTs 12 corresponding respectively to the sub-pixels 2R, 2G, and2B. Since the configuration of a TFT has conventionally been well known,the individual layers of a TFT 12 are not illustrated in the drawings ordescribed herein.

The interlayer film 13 is provided on the insulating substrate 11throughout the entire region of the insulating substrate 11 to cover theTFTs 12 and the wires 14.

There are provided on the interlayer film 13 a first electrode 21 of theorganic EL element 20.

The interlayer film 13 has contact holes 13 a for electricallyconnecting the first electrode 21 of the organic EL element 20 to theTFTs 12. This electrically connects the TFTs 12 to the organic ELelement 20 via the contact holes 13 a.

The edge cover 15 is an insulating layer for presenting the firstelectrode 21 and a second electrode 26 of the organic EL element 20 fromshort-circuiting with each other due to, for example, (i) a reducedthickness of the organic EL layer in an edge section of the pattern ofthe first electrode 21 or (ii) an electric field concentration.

The edge cover 15 is so formed on the interlayer film 13 as to coveredge sections of the pattern of the first electrode 21.

The edge cover 15 has openings 15R, 15G, and 15B for the sub-pixels 2R,2G, and 2B, respectively. The openings 15R, 15G, and 15B of the edgecover 15 define the respective light-emitting regions of the sub-pixels2R, 2G, and 2B.

The sub-pixels 2R, 2G, and 2B are, in other words, isolated from oneanother by the insisting edge cover 15. The edge cover 15 thus functionsas an element isolation film as well.

The description below now deals with the organic EL element 20.

The organic EL element 20 is a light-emitting element capable ofhigh-luminance light emission based on low-voltage direct-currentdriving, and includes: a first electrode 21; an organic EL layer; and asecond electrode 26, provided on top of one another in that order.

The first electrode 21 is a layer having the function of injecting(supplying) positive holes into the organic EL layer. The firstelectrode 21 is, as described above, connected to the TFTs 12 via thecontact holes 13 a.

The organic EL layer provided between the first electrode 21 and thesecond electrode 26 includes, as illustrated in FIG. 8; a hole injectionlayer/hole transfer layer 22; luminous layers 23R, 23G, and 23B; anelectron transfer layer 24; and an electron injection layer 25, formedinn that order from the first electrode 21 side.

The above stack order intends to use (i) the first electrode 21 as ananode and (ii) the second electrode 26 as a cathode. The stack order ofthe organic EL layer is reversed in the case where the first electrode21 serves as a cathode and the second electrode 26 serves as an anode.

The hole injection layer has the function of increasing efficiency ininjecting positive holes into the luminous layers 23R, 23G, and 23B. Thehole transfer layer has the function of increasing efficiency intransferring positive holes to the luminous layers 23R, 23G, and 23B.The hole injection layer/hole transfer layer 22 is so formed uniformlythroughout the entire display region of the TFT substrate 10 as to coverthe first electrode 21 and the edge cover 15.

The present embodiment describes an example case involving, as the holeinjection layer and the hole transfer layer, a hole injection layer/holetransfer layer 22 that integrally combines a hole injection layer with ahole transfer layer as described above. The present embodiment is,however, not limited to such an arrangement. The hole injection layerand the hole transfer layer may be provided as separate layersindependent of each other.

There are provided on the hole injection layer/hole transfer layer 22the luminous layers 23R, 23G, and 23B so formed in correspondence withthe respective sub-pixels 2R, 2G, and 2B as to cover the respectiveopenings 15R, 15G, and 15B of the edge cover 15.

The luminous layers 23R, 23G, and 23B are each a layer that has thefunction of emitting light by recombining (i) holes (positive holes)injected from the first electrode 21 side with (ii) electrons injectedfrom the second electrode 26 side. The luminous layers 23R, 23G, and 23Bare each made of a material with high luminous efficiency, such as alow-molecular fluorescent dye and a metal complex.

The electron transfer layer 24 is a layer that has the function ofincreasing efficiency in transferring electrons from the secondelectrode 26 to the luminous layers 23R, 23G, and 23B. The electroninjection layer 25 is a layer that has the function of increasingefficiency in injecting electrons from the second electrode 26 into theluminous layers 23R, 23G, and 23B.

The electron transfer layer 24 is so provided on the luminous layers23R, 23G, and 23B and the hole injection layer/hole transfer layer 22uniformly throughout the entire display region of the TFT substrate 10as to cover the luminous layers 23R, 23G, and 23B and the hole injectionlayer/hole transfer layer 22. The electron injection layer 25 is soprovided on the electron transfer layer 24 uniformly throughout theentire display region of the TFT substrate 10 as to cover the electrontransfer layer 24.

The electron transfer layer 24 and the electron injection layer 25 maybe provided either (i) as separate layers independent of each other asdescribed above or (ii) integrally with each other. In other words, theorganic EL display device 1 may include an electron transferlayer/electron injection layer instead of the electron transfer layer 24and the electron injection layer 25.

The second electrode 26 is a layer having the function of injectingelectrons into the organic EL layer including the above organic layers.The second electrode 26 is so provided on the electron injection layer25 uniformly throughout the entire display region of the TFT substrate10 as to cover the electron injection layer 25.

The organic layers other than the luminous layers 23R, 23G, and 23B arenot essential for the organic EL layer, and may thus be included asappropriate in accordance with a required property of the organic ELelement 20. The organic EL layer may further include a carrier blockerlayer according to need. The organic EL layer can, for example,additionally include, as a carrier blocking layer, a hole blocking layerbetween the luminous layers 23R, 23G, and 23B and the electron transferlayer 24 to prevent positive holes from transferring from the luminouslayers 23R, 23G, and 23B to the electron transfer layer 24 and thus toimprove luminous efficiency.

The organic EL element 20 can have, for example, any of the layeredstructures (1) through (8) below.

(1) first electrode/luminous layer/second electrode

(2) first electrode/hole transfer layer/luminous layer/electron transferlayer/second electrode

(3) first electrode/hole transfer layer/luminous layer/hole blockinglayer/electron transfer layer/second electrode

(4) first electrode/hole transfer layer/luminous layer/hole blockinglayer/electron transfer layer/electron

(5) first electrode/hole injection layer/hole transfer layer/luminouslayer/electron transfer layer/electron injection layer/second electrode

(6) first electrode/hole injection layer/hole transfer layer/luminouslayer/hole blocking layer/electron transfer layer/second electrode

(7) first electrode/hole injection layer/hole transfer layer/luminouslayer/hole blocking layer/electron transfer layer/electron injectionlayer/second electrode

(8) first electrode/hole injection layer/hole transfer layer/electronblocking layer (carrier blocking layer)/luminous layer/hole blockinglayer/electron transfer layer/electron injection layer/second electrode

As described above, the hole injection layer and the hole transferlayer, for example, may be integrated with each other. The electrontransfer layer and the electron injection layer may be integrated witheach other.

The structure of the organic EL element 20 is not limited to the aboveexample layered structure, and may be a desired layered structureaccording to a required property of the organic EL element 20 asdescribed above.

The description below deals with a method for producing the organic ELdisplay device 1.

FIG. 9 is a flowchart indicating successive steps for producing theorganic EL display device 1.

As illustrated in FIG. 9, the method of the present embodiment forproducing the organic EL display device 1 includes steps such as a TFTsubstrate/first electrode preparing step (S1), a hole injectionlayer/hole transfer layer vapor deposition step (S2), a luminous layervapor deposition step (S3), and electron transfer layer vapor depositionstep (S4), an electron injection layer vapor deposition step (S5), asecond electrode vapor deposition step (S6), and a seating step (S7).

The following describes, with reference to the flowchart illustrated inFIG. 9, the individual steps described above with reference to FIGS. 6and 8.

Note, however, that the dimensions, materials, shapes and the like ofthe respective constituent elements described in the present embodimentmerely serve as an embodiment, and that the scope of the presentinvention should not be construed limitedly on the grounds of suchaspects of the constituent elements.

The stack order described in the present embodiment, as mentioned above,intends to use (i) the first electrode 21 as an anode and (ii) thesecond electrode 26 as a cathode. In the converse case where the firstelectrode 21 serves as a cathode and the second electrode 26 serves asan anode, the stack order of the organic EL layer is reversed, and therespective materials of the first electrode 21 and the second electrode26 are switched similarly.

First, as illustrated in FIG. 8, the method of the present embodiment(i) applies a photosensitive resin onto an insulating substrate 11 thatis made of a material such as glass, and that includes, for example,TFTs 12 and wires 14 each formed by a publicly known technique, and (ii)carries out patterning with respect to the photosensitive resin byphotolithography. This forms an interlayer film 13 on the insulatingsubstrate 11.

The insulating substrate 11 is, for example, a glass or plasticsubstrate having (i) a thickness of 0.7 to 1.1 mm, (ii) a length(longitudinal length) of 400 to 500 mm along a y axis direction, and(iii) a length (lateral length) of 300 to 400 mm along an x axisdirection. The insulating substrate 11 of the present embodiment was aglass substrate.

The interlayer film 13 can be made of, for example, an acrylic resin ora polyimide resin. The acrylic resin is, for example, a product in theOptomer series available from JSR Corporation. The polyimide resin is,for example, a product in the Photoneece series available from TorayIndustries, Inc. Note that since a typical polyimide resin is nottransparent but colored, the interlayer film 13 is more suitably made ofa transparency resin such as an acrylic resin in the case where anorganic EL display device of the bottom emission type is produced as theorganic EL display device 1 as illustrated in FIG. 8.

The interlayer film 13 is simply required to have a film thickness thatcan compensate for the difference in level created by the TFTs 12. Thefilm thickness is thus not particularly limited. The film thickness was,for example, approximately 2 μm in the present embodiment.

The method of the present embodiment next forms, in the interlayer film13, contact holes 13 a for electrically connecting the first electrode21 to the TFTs 12.

The method then forms, as a conductive film (electrode film), a filmsuch as an ITO (indium tin oxide) film by a method such as s sputteringmethod so that the film has a thickness of 100 nm.

The method next applies a photoresist onto the ITO film, carries outpatterning with respect to the photoresist by photolithography, and thencarries out etching with respect to the ITO film with use of ferricchloride as an etchant. The method then strips the photoresist with useof a resist stripping solution, and further washes the substrate. Thisforms, on the interlayer film 13, a first electrode 21 in a matrix.

The conductive film material for the first electrode 21 is, for example,(i) a transparent conductive material such as ITO, IZO (indium zincoxide), and gallium-added zinc oxide (GZO) or (ii) a metal material suchas gold (Au), nickel (Ni), and platinum (Pt).

The above conductive film can be formed by, instead of the sputteringmethod, a method such as a vacuum vapor deposition method, a chemicalvapor deposition (CVD) method, a plasma CVD method, and a printingmethod.

The thickness of the first electrode 21 is not particularly limited. Thefirst electrode 21 can have a thickness of, for example, a 100 nm asmentioned above.

The method next forms a pattern of an edge cover 15, as with theinterlayer film 13, to have a film thickness of, for example,approximately 1 μm. The edge cover 15 can be made of an insulatingmaterial similar to that for the interlayer film 13.

The step described above prepares the TFT substrate 10 and the firstelectrode 21 (S1).

The method of the present embodiment next carries out, with respect tothe TFT substrate 10 prepared through the above step, (i) a bake under areduced pressure for dehydration and (ii) an oxygen plasma treatment forsurface washing of the first electrode 21.

The method then carries out vapor deposition of a hole injection layerand a hole transfer layer (in the present embodiment, a hole injectionlayer/hole transfer layer 22) on the TFT substrate 10 throughout itsentire display region with use of a conventional vapor deposition device(S2).

Specifically, the method (i) carries out an alignment adjustment,relative to the TFT substrate 10, of an open mask having an openingcorresponding to the entire display region and (ii) closely attaches theopen mask to the TFT substrate 10. The method then, while rotating theTFT substrate 10 and the open mask together, carries out, through theopening of the open mask and uniformly throughout the entire displayregion, vapor deposition of vapor deposition particles scattered from avapor deposition source.

The above vapor deposition carried out throughout the entire displayregion refers to vapor deposition carried out unintermittently oversub-pixels having different colors and located adjacent to one another.

The hole injection layer and the hole transfer layer are each made of amaterial such as (i) benzine, styryl amine, triphenylamine, porphyrin,triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine,arylamine, oxazole, anthracen, fluorenone, hydrazone, stilbene,triphenylene, azatriphenylene, or a derivative of any of the above, (ii)a polysilane compound, (iii) a vinylcarbazole compound, (iv) and amonomer, an oligomer, or a polymer of a heterocyclic conjugated system,such as a thiophene compound and an aniline compound.

The hole injection layer and the hole transfer layer may be eitherintegrated with each other as described above or formed as separatelayers independent of each other. The hole injection layer and the holetransfer layer each have a film thickness of, for example, 10 to 100 nm.

The present embodiment used, as the hole injection layer and the holetransfer layer, a hole injection layer/hole transfer layer 22 that wasmade of 4,4′-bis [N-(1-naphthyl)-N-phenylamino]biphenyl(α-NPD) and thathad a film thickness of 30 nm.

The method of the present embodiment next carries out a discriminativeapplication formation (pattern formation) of luminous layers 23R, 23G,and 23B on the hole injection layer/hole transfer layer 22 incorrespondence with respective sub-pixels 2R, 2G, and 2B so that theluminous layers 23R, 23G, and 23B cover respective openings 15R, 15G,and 15B of the edge cover 15 (S3).

As described above, the luminous layers 23R, 23G, and 23B are each madeof a material with high luminous efficiency, such as a low-molecularfluorescent dye and a metal complex.

The luminous layers 23R, 23G, and 23B are each made of a material suchas (i) anthracene, naphthalene, indene, phenanthrene, pyrene,naphthacene, triphenylene, anthracene, perylene, picene, fluoranthene,acephenanthrylene, pentaphene, pentacene, coronene, butadiene, coumarin,acridine, stilbene, or a derivative of any of the above, (ii) atris(8-hydroxyquinolinate) aluminum complex, (iii) abis(benzohydroxyquinolinate) beryllium complex, (iv) atri(dibenzoylmethyl) phenanthroline europium complex, (v) and ditoluylvinyl biphenyl.

The luminous layers 23R, 23G, and 23B each have a film thickness of, forexample, 10 to 100 nm.

The vapor deposition method and the vapor deposition device of thepresent embodiment are each particularly suitably used for adiscriminative application formation (pattern formation) of suchluminous layers 23R, 23G, and 23B.

A description below deals in detail with a discriminative applicationformation of the luminous layers 23R, 23G, and 23B which discriminativeapplication formation involves the vapor deposition method and the vapordeposition device of the present embodiment.

The method of the present embodiment next carries out, in a mannersimilar to that described for the above hole injection layer/holetransfer layer vapor deposition step (S2), vapor deposition of anelectron transfer layer 24 throughout the entire display region of theTFT substrate 10 so that the electron transfer layer 24 covers the holeinjection layer/hole transfer layer 22 and the luminous layers 23R, 23G,and 23B (S4).

The method then carries out, in a manner similar to that described forthe above hole injection layer/hole transfer layer vapor deposition step(S2), vapor deposition of an electron injection layer 25 throughout theentire display region of the TFT substrate 10 so that the electroninjection layer 25 covers the electron transfer layer 24 (S5).

The electron transfer layer 24 and the electron injection layer 25 areeach made of a material such as (i) quinoline, perylene, phenanthroline,bisstyryl, pyrazine, triazole, oxazole, oxadiazole, fluorenone, or aderivative or metal complex of any of the above, and (ii) LiF (lithiumfluoride).

Specific examples of the material include (i) Alq(tris(8-hydroxyquinoline)aluminum), anthracene, naphthalene, phenanthrene, pyrene,anthracene, perylene, butadiene, coumarin, acridine, stilbene,1,10-phenanthroline, and a derivative or metal complex of any of theabove, and (ii) LiF.

As mentioned above, the electron transfer layer 24 and the electroninjection layer 25 may be either integrated with each other or formed asseparate layers independent of each other. The electron transfer layer24 and the electron injection layer 25 each have a film thickness of,for example, 1 to 100 nm, or preferably have a film thickness of 10 to100 nm. The respective film thicknesses of the electron transfer layer24 and the electron injection layer 25 add up to, for example, 20 to 200nm.

In the present embodiment, (i) the electron transfer layer 24 was madeof Alq, whereas the electron injection layer 25 was made of LiF, and(ii) the electron transfer layer 24 had a film thickness of 30 nm,whereas the electron injection layer 25 had a film thickness of 1 nm.

The method of the present embodiment next carries out, in a mannersimilar to that described for the above hole injection layer/holetransfer layer vapor deposition step (S2), vapor deposition of a secondelectrode 26 throughout the entire display region of the TFT substrate10 so that the second electrode 26 covers the electron injection layer25 (S6).

The second electrode 26 is suitably made of a material (electrodematerial) such as a metal with a small work function. Examples of suchan electrode material include a magnesium alloy (for example, MgAg), analuminum alloy (for example, AlLi, AlCa, or AlMg) and calcium metal. Thesecond electrode 26 has a thickness of, for example, 50 to 100 nm.

In the present embodiment, the second electrode 26 was made of aluminumand has a film thickness of 50 nm. The operation described above forms,on the TFT substrate 10, an organic EL element 20 including the organicEL layer, the first electrode 21, and the second electrode 26 describedabove.

The method of the present embodiment then attached (i) the TFT substrate10, on which the organic EL element 20 is provided, to (ii) a sealingsubstrate 40 with use of an adhesive layer 30 as illustrated in FIG. 6so that the organic EL element 20 was contained.

The sealing substrate 40 is, for example, an insulating substrate suchas a glass substrate and a plastic substrate and 0.4 to 1.1 mm inthickness. The sealing substrate 40 of the present embodiment was aglass substrate.

The longitudinal and lateral lengths of the sealing substrate 40 mayeach be adjusted as appropriate in accordance with the size of a targetorganic EL display device 1. The sealing substrate 40 may be aninsulating substrate substantially equal in size to the insulatingsubstrate 11 of the TFT substrate 10, in which case a combination of thesealing substrate 40, the TFT substrate 10, and the organic EL element20 contained therebetween is divided in accordance with the size of atarget organic EL display device 1.

The method for containing the organic EL element 20 is not limited tothe method described above. Examples of other containing methods include(i) a method that uses a centrally depressed glass substrate as thesealing substrate 40 and that the combination of the sealing substrate40 and the TFT substrate 10 is sealed along the edge in a frame shapewith use of, for example, a sealing resin or fritted glass, and (ii) amethod that fills a space between the TFT substrate 10 and the sealingsubstrate 40 with a resin. The method for producing the organic ELdisplay device 1 does not depend on the above containing method, and canemploy any of various containing methods.

The second electrode 26 may be provided thereon with a protective film(not shown) that covers the second electrode 26 and that preventsinfiltration of oxygen, moisture and the like present outside into theorganic EL element 20.

The protective film is made of an electrically insulating or conductivematerial such as silicon nitride and silicon oxide. The protective filmhas a thickness of, for example, 100 to 1000 nm.

Through the above steps, the organic EL display device 1 is finallyproduced.

The organic EL display device 1, upon receipt of a signal through a wire14, turns on a TFT 12 and thus allows (i) holes (positive holes) to beinjected from the first electrode 21 into the organic EL layer andfurther (ii) electrons to be injected from the second electrode 26 intothe organic EL layer. This causes the positive holes and the electronsto recombine with each other inside the luminous layers 23R, 23G, and23B. The positive holes and the electrons thus recombined are emitted inthe form of light when becoming inactive.

In the above organic EL display device 1, controlling respective lightemission luminances of the sub-pixels 2R, 2G, and 2B allows apredetermined image to be displayed.

The following describes an arrangement of a vapor deposition device ofthe present embodiment.

FIG. 1 is a plan view of a film formation substrate (vapor depositionsubstrate) and a mask unit both inside a vacuum chamber of the vapordeposition device of the present embodiment, the plan view being takenfrom a back surface side of the film formation substrate (that is, theside opposite to the vapor deposition surface). For convenience ofillustration, FIG. 1 uses a chain double-dashed line to represent thefilm formation substrate. FIG. 2 is a bird's eye view of mainconstituent elements inside the vacuum chamber of the vapor depositiondevice of the present embodiment. FIG. 3 is a cross-sectional viewschematically illustrating a configuration of a main part of the vapordeposition device of the present embodiment. FIG. 3 illustrates a crosssection of the vapor deposition device, the cross section being takenalong line B-B of FIG. 1. For convenience of illustration, FIG. 3partially omits an arrangement such as openings of a vapor depositionmask (shadow mask) and a vapor deposition film. FIG. 4 is a blockdiagram illustrating a part of a configuration of the vapor depositiondevice of the present embodiment.

The vapor deposition device 50 of the present embodiment, as illustratedin FIG. 3, includes: a vacuum chamber 60 (film growing chamber); asubstrate moving mechanism 70 (substrate moving means; moving means;adjusting means); a mask unit 80; image sensors 90 (first image sensors;alignment observing means); and a control circuit 100 (see FIG. 4).

As illustrated in FIG. 3, the vacuum chamber 60 contains the substratemoving mechanism 70 and the mask unit 80.

The vacuum chamber 60 is provided with a vacuum pump (not shown) forvacuum-pumping the vacuum chamber 60 via an exhaust port (not shown) ofthe vacuum chamber 60 to keep a vacuum in the vacuum chamber 60 duringvapor deposition.

The substrate moving mechanism 70 includes, for example; a substrateholding member 71 (substrate holding means) for holding a film formationsubstrate 200 (for example, a TFT substrate 10); and a motor 72 (seeFIG. 4).

The substrate moving mechanism 70 causes (i) the substrate holdingmember 71 to hold the film formation substrate 200 and (ii) abelow-described motor drive control section 103 (see FIG. 4) to drivethe motor 72 so as to hold the film formation substrate 200 and move itin the horizontal direction. The substrate moving mechanism 70 may beprovided to be capable of moving the film formation substrate 200 either(i) in both the x axis direction and the y axis direction or (ii) in oneof the x axis direction and the y axis direction.

The substrate holding member 71 is an electrostatic chuck. The filmformation substrate 200 is, in a state in which bend due to its ownweight is absent, so held by the electrostatic chuck as to be separatedfrom a below-described shadow mask 81 of the mask unit 80 by a fixed gapg1 (void; vertical distance).

The gap g1 between the film formation substrate 200 and the shadow mask81 preferably falls within the range of not less than 50 μm and not morethan 1 mm, or is more preferably on the order of 200 μm.

If the gap g1 is smaller than 50 μm, the film formation substrate 200will likely be come into contact with the shadow mask 81.

If the gap g1 is larger than 1 mm, vapor deposition particles that havepassed through openings 82 of the shadow mask 81 are spread widely,which results in a vapor deposition film 211 being formed to have toolarge a pattern width. In the case where, for example, the vapordeposition film 211 is the luminous layer 23R, the gap g1 being largerthan 1 mm may undesirably result in vapor deposition of the material ofthe luminous layer 23R through the respective openings 15G and 15B ofthe adjacent sub-pixels 2G and 2B.

With the gap g1 being approximately 200 μm, (i) there is no risk of thefilm formation substrate 200 coming into contact with the shadow mask81, and (iii) the vapor deposition film 211 can have a sufficientlysmall pattern width.

The mask unit 80, as illustrated in FIG. 3, includes: a shadow mask 81(vapor deposition mask; mask) a vapor deposition source 85; a maskholding member 87 (holding means; supporting member); a mask tensionmechanism 88 (tension mechanism; adjusting means); and a shutter 89 (seeFIG. 4).

The shadow mask 81 is, for example, a metal mask.

The shadow mask 81 is so formed as to (i) be smaller in area (size) thana vapor deposition region 210 of the film formation substrate 200 and(ii) have at least one side that is shorter than the width of the vapordeposition region 210 of the film formation substrate 200.

The shadow mask 81 of the present embodiment has a rectangular shape(that is, in the shape of a belt), and is sized as follows: The shadowmask 81 is, as illustrated in FIG. 1, so formed as to have (i) longsides 81 a each with a width d1 (that is, the length along the long-sidedirection (long-axis direction) of the shadow mask 81) that is largerthan the width d3 of a side of the vapor deposition region 210 (in theexample illustrated in FIG. 1, a long side 210 a of the vapor depositionregion 210) which side faces the long sides 81 a of the shadow mask 81and (ii) short sides 81 b each with a width d2 (that is, the lengthalong the short-side direction (short-axis direction) of the shadow mask81) that is smaller than the width d4 of a side of the vapor depositionregion 210 (in the example illustrated in FIG. 1, a short side 210 b ofthe vapor deposition region 210) which side faces the short sides 81 bof the shadow mask 81.

The shadow mask 81, as illustrated in FIGS. 1 and 2, has a plurality ofopenings 82 (through holes) arranged in a one-dimensional direction andeach having the shape of, for example, a belt (that is, in a stripeshape). In the case where, for example, a discriminative applicationformation of the luminous layers 23R, 23G, and 23B is earned out withrespect to the TFT substrate 10 as a pattern formation of vapordeposition films 211 (see FIG. 3) on the film formation substrate 200,the openings 82 are formed in correspondence with the size and pitch ofcolumns for each color of the luminous layers 23R, 23G, and 23B.

The shadow mask 81, as illustrated in FIG. 1, includes, for example,alignment marker sections 83 extending along a spanning direction(substrate scanning direction) of the film formation substrate 200. Thealignment marker sections 83 include respective alignment markers 84(see FIG. 3) for use in an alignment between the film formationsubstrate 200 and the shadow mask 81.

The alignment marker sections 83 of the present embodiment are, asillustrated in FIG. 1, provided along the short sides 81 b (short axis)of the shadow mask 81.

The shadow mask 81, as described above, has (i) long sides 81 a eachwith a width d1 that is larger than the width d3 of a side of the vapordeposition region 210 which side faces the long sides 81 a and (ii)short sides 81 b each with a width d2 that is smaller than the width d4of a side of the vapor deposition region 210 which side faces the shortsides 81 b. This arrangement allows the alignment marker sections 83 tobe formed respectively in opposite end sections arranged along thelong-side direction (that is, at the opposite short sides 81 b and 81b). The above arrangement thus makes it possible to carry out analignment easily and more precisely.

The film formation substrate 200, as illustrated in FIG. 1, includesalignment marker sections 220 outside the vapor deposition region 210and along the scanning direction (substrate scanning direction) of thefilm formation substrate 200. The alignment marker sections 220 includerespective alignment markers 221 (see FIG. 3) for use in an alignmentbetween the film formation substrate 200 and the shadow mask 81.

The alignment marker sections 220 of the present embodiment are, asillustrated in FIG. 1, provided along the respective short sides 210 b(short axis) of the vapor deposition region 210 of the film formationsubstrate 200.

The stripe-shaped, openings 82 of the present embodiment are provided to(i) extend along the short side direction of the shadow mask 81, thatis, the substrate scanning direction, and to (ii) be arranged next toone another along the long side direction of the shadow mask 81, thatis, a direction that orthogonally crosses the substrate scanningdirection.

The vapor deposition source 85 is, for example, a container thatcontains a vapor deposition material. The vapor deposition source 85 is,as illustrated in FIG. 3, (i) placed to face the shadow mask 81 and (ii)separated from the shadow mask 81 by a fixed gap g2 (void), that is,positioned away from the shadow mask 81 by a fixed distance.

The vapor deposition source 85 may be a container that itself contains avapor deposition material or a container that includes a load-lock pipe.

The vapor deposition source 85 includes, for example, a mechanism foremitting vapor deposition particles upward.

As illustrated in FIGS. 1 and 2, the vapor deposition source 85 has, ona surface facing the shadow mask 81, a plurality of emission holes 86for emitting (scattering) the vapor deposition material in the form ofvapor deposition particles.

The present embodiment is arranged as described above such that (i) thevapor deposition source 85 is provided below the film formationsubstrate 200 and that (ii) the film formation substrate 200 is held bythe substrate holding member 71 in such a state that the vapordeposition region 210 faces downward. Thus, in the present embodiment,the vapor deposition source 85 carries out vapor deposition of vapordeposition particles through the openings 82 of the shadow mask 81 ontothe film formation substrate 200 upward from below (that is, updeposition; hereinafter referred to as “depo-up”).

The emission holes 86 are, as illustrated in FIGS. 1 and 2, provided toface the respective openings of the shadow mask 81 so as to be open inrespective opening regions of the shadow mask 81. The emission holes 86of the present embodiment are arranged one-dimensionally (i) along thedirection in which the openings 82 of the shadow mask 81 are arrangednext to one another and (ii) so as to face the respective openings 82 ofthe shadow mask 81.

Thus, as illustrated in FIGS. 1 and 2, the vapor deposition source 85 isformed to have a surface that faces the shadow mask 81, the surface(that is, the surface in which the emission holes 86 are provided)having, for example, a rectangular shape (belt shape) as viewed from theback surface side of the film formation substrate 200 (that is, in aplan view) so as to match the rectangular shape (belt shape) of theshadow mask 81.

In the mask unit 80, the shadow mask 81 and the vapor deposition source85 are fixed in position relative to each other. Specifically, there isconstantly a fixed gap g2 (see FIG. 3) between (i) the shadow mask 81and (ii) the surface of the vapor deposition source 85 in which surfacethe emission holes 86 are provided, and there is constantly a fixedpositional relationship between (i) the openings 82 of the shadow mask81 and (ii) the emission holes 86 of the vapor deposition source 85.

The emission holes 86 of the vapor deposition source 85 are each soplaced as to coincide with the center of a corresponding opening 82 ofthe shadow mask 81 when the mask unit 80 is viewed from the back surfaceside of the film formation substrate 200 (that is, in a plan view).

The shadow mask 81 and the vapor deposition source 85 are, for example,attached to the mask holding member 87 (for example, an identicalholder) for holding and fixing (i) the shadow mask 81 via the masktension mechanism 88 and (ii) the vapor deposition source 85 (see FIG.3). The shadow mask 81 and the vapor deposition source 85 are thus sointegrated with each other as to be held and fixed in the respectivepositions relative to each other.

The shadow mask 81 is under tension caused by the mask tension mechanism88. The shadow mask 81 is thus adjusted as appropriate so that no bendor elongation due to its own weight is caused.

The vapor deposition device 50 is arranged as described above such that(i) the film formation substrate 200 is adhered to a fixing plate by thesubstrate holding member 71 (electrostatic chuck) and is thus preventedfrom being bent due to its own weight and (ii) the shadow mask 81 isunder tension caused by the mask tension mechanism 88 so that thedistance between the film formation substrate 200 and the shadow mask 81is uniformly maintained throughout the entire region by which the filmformation substrate 200 overlaps the shadow mask 81 in a plan view.

The shutter 89 is used according to need in order to control reaching ofvapor deposition particles to the shadow mask 81. The shutter 89 iseither closed or opened by a shutter drive control section 105 (see FIG.4) in accordance with a vapor deposition OFF signal or vapor section 104(see FIG. 4) described below.

The shutter 89 is, for example, provided to be capable of moving in aspace between the shadow mask 81 and the vapor deposition source 85(that is, capable of being inserted between them). The shutter 89 isinserted between the shadow mask 81 and the vapor deposition source 85to close the openings 82 of the shadow mask 81. Appropriately insertingthe shutter 89 between the shadow mask 81 and the vapor depositionsource 85 can prevent vapor deposition on a portion for which vapordeposition is unnecessary (that is, a non vapor deposition region).

The vapor deposition device 50 is so adjusted that vapor depositionparticles from the vapor deposition source 85 are scattered below theshadow mask 81. The vapor deposition device 50 may be arranged such thatvapor deposition particles scattered beyond the shadow mask 81 areblocked as appropriate by, for example, a deposition preventing plate(shielding plate).

The vacuum chamber 60 is provided with, for example, image sensors 90(see FIG. 4) each (i) attached to an outer surface of the vacuum chamber60, (ii) including a CCD, and (iii) serving as image sensing means(image reading means). The vacuum chamber 60 is further provided with acontrol circuit 100 (i) attached to the outer surface of the vacuumchamber 60, (ii) connected to the image sensors 90, and (iii) serving ascontrol means.

The image sensors 90 each function as position detecting means for usein an alignment of the film formation substrate 200 and the shadow mask81.

The control circuit 100, as illustrated in FIG. 4, includes: an imagedetecting section 101; a computing section 102; a motor drive controlsection 103; a vapor deposition ON/OFF control section 104; and ashutter drive control section 105.

As described above, the film formation substrate 200 includes, asillustrated in FIG. 1, alignment marker sections 220 provided (i)outside the vapor deposition region 210 and (ii) along, for example, thesubstrate scanning direction, the alignment marker sections 220 eachincluding an alignment marker 221.

The image detecting section 101 detects, on the basis of an imagecaptured by the image sensors 90, respective images of (i) the alignmentmarkers 221 included in the film formation substrate 200 and (ii) thealignment markers 84 of the shadow mask 81. The image detecting section101 further detects the start-end and rear-end of the vapor depositionregion 210 of the film formation substrate 200 on the basis of, amongthe alignment markers 221 included in the film formation substrate 200,(i) a start-end marker indicative of the start-end of the vapordeposition region 210 and (ii) a rear-end marker indicative of therear-end of the vapor deposition regions 210.

The start-end marker and the rear-end marker mentioned above may beidentical to each other. In this case, the image detecting section 101detects, with respect to the substrate scanning direction, whether aparticular end of the vapor deposition region 210 is its start-end orrear-end.

The computing section 102 determines, from the image detected by theimage detecting section 101, the amount of movement of the filmformation substrate 200 and the shadow mask 81 relative to each other(for example, the amount of movement of the film formation substrate 200relative to the shadow mask 81). The computing section 102, for example,measures the amount of positional difference (that is, a shift componentalong the x axis direction and the y axis direction, and a rotationcomponent on the x-y plane) between the alignment markers 221 and thealignment markers 84 to determine a correction value for a substrateposition of the film formation substrate 200 by computation. In otherwords, the computing section 102 determines the correction value bycomputation with respect to the direction perpendicular to the substratescanning direction and a rotation direction of the film formationsubstrate 200.

The rotation direction of the film formation substrate refers to adirection of rotation on the x-y plane about a z axis, as a rotationaxis, at the center of a film formation surface of the film formationsubstrate 200.

The correction value is outputted in the form of a correction signal tothe motor drive control section 103. The motor drive control section103, on the basis of the correction signal from the computing section102, drives the motor 72 connected to the substrate holding member 71and thus corrects the substrate position of the film formation substrate200.

How the substrate position is corrected with use of the alignmentmarkers 84 and 221 is described below together with example shapes ofthe alignment markers 84 and 221.

The motor drive control section 103 drives the motor 72 to move the filmformation substrate 200 in the horizontal direction as mentioned above.

The vapor deposition ON/OFF control section 104 generates (i) a vapordeposition OFF signal when the image detecting section 101 detects therear-end of the vapor deposition region 210 and (ii) a vapor depositionON signal when the image detecting section 101 detects the start-end ofthe vapor deposition region 210.

The shutter drive control section 105 (i) closes the shutter 89 uponreceipt of a vapor deposition OFF signal from the vapor depositionON/OFF control section 104 and (ii) opens the shutter 89 upon receipt ofa vapor deposition ON signal from the vapor deposition ON/OFF controlsection 104.

The following describes (i) how the substrate position is corrected withuse of the alignment markers 84 and 221 and (ii) example shapes of thealignment markers 84 and 221.

(a) through (d) of FIG. 5 illustrate example shapes of the alignmentmarkers 84 and 221. (b) through (d) of FIG. 5 each illustrate only twoof the juxtaposed alignment markers 84 and of the juxtaposed alignmentmarkers 221 for convenience of illustration.

The alignment markers 84 are each, for example, an opening formed in analignment marker, section 83 of the shadow mask 81. The opening can alsobe a notch section.

The alignment markers 221 are not particularly limited in terms ofmaterial, and can be made of a material identical to an electrodematerial used in, for example, the TFT substrate 10. Thus, the alignmentmarkers 221 can be (i) formed during an electrode forming step forforming, for example, gate electrodes, source electrodes, and drainelectrodes of the film formation substrate 200 such as the TFT substrate10 and (ii) made of the material of which the above electrodes are made.

The computing section 102, on the basis of an image of the alignmentmarkers 84 and 221, the image having been detected by the imagedetecting section 101, measures (determines) (i) a distance r betweenrespective ends (outer edges) of each alignment marker 84 and itscorresponding alignment marker 221 along the x axis direction and (ii) adistance q between respective ends (outer edges) of each alignmentmarker 84 and its corresponding alignment marker 221 along the y axisdirection. The computing section 102 thus determines the amount ofpositional difference in alignment to compute a correction value for asubstrate position.

In the case where, for example, the substrate scanning direction is thex axis direction, the sign “r” in (a) through (c) of FIG. 5 indicates adistance between the respective ends along the substrate scanningdirection, whereas the sign “q” in (a) through (c) of FIG. 5 indicates adistance between the respective ends along the direction perpendicularto the substrate scanning direction. The computing section 102 measures(determines) the distances r and 1 at, for example, opposite ends of thevapor deposition region 210 of the film formation substrate 200 todetermine the amount of shift caused in alignment during a substratescan.

Including a plurality of alignment markers 84 in the shadow mask 81 asdescribed above allows the shadow mask 81 and the film formationsubstrate 200 to be aligned with each other along the horizontaldirection as well.

In the case where the film formation substrate 200 is moved in only onecoordinate axis direction (for example, the x axis direction) asdescribed above, the alignment markers 84 and 221 are not particularlylimited in terms of size (which is larger or smaller) along thesubstrate scanning direction.

In the case where the substrate scanning direction corresponds to, forexample, only the x axis direction as described above as illustrated in(d) of FIG. 5, it is not necessary to measure a distance r in a regionof the film formation substrate 200 which region is other than ends ofthe film formation substrate 200. In this case, measuring a distance qat, for example, opposite ends of the vapor deposition region 210 of thefilm formation substrate 200 makes it possible to detect mispositioningof the film formation substrate 200. On the basis of the value of thisdistance q, it is possible to correct a substrate position of the filmformation substrate 200.

Thus, the above case may involve, as illustrated in (d) of FIG. 5,alignment markers 84 and 221 that are (i) provided in a region of thefilm formation substrate 200 which region is other than ends of the filmformation substrate 200 and (ii) shaped such that the alignment markers84 and 221 illustrated in (a) of FIG. 5 are each divided into aplurality of segments along the x axis direction.

The present embodiment describes an example case that involvessimultaneously scanning the film formation substrate 200 and carryingout an alignment between the shadow mask 81 and the film formationsubstrate 200 as described below. The present embodiment is, however,not limited to such an arrangement. The present embodiment canalternatively be arranged such that a sufficient alignment is carriedout before a substrate scan and that no alignment is carried out duringa substrate scan.

The present embodiment can be arranged as in an embodiment describedbelow such that, for example, the film formation substrate 200 is movedalong a first side of the vapor deposition region 210 of the filmformation substrate 200 (for example, along the y axis direction in (a)through (c) of FIG. 5), and is then moved along a second side (forexample, the x axis direction in (a) through (c) of FIG. 5) orthogonalto the first side. In this case, the sign “r” in (a) through (c) of FIG.5 indicates a distance between the respective ends along the directionperpendicular to the substrate scanning direction, whereas the sign “q”in (a) through (c) of FIG. 5 indicates a distance between the respectiveends along the direction (shift direction) in which the film formationsubstrate 200 is moved.

In this case, the computing section 102 measures distances r and q foralignment markers located at the four corners, and thus determines (i)the amount of positional difference present in alignment at the start ofa substrate scan and (ii) the amount of positional difference present inalignment after the film formation substrate 200 is moved (shifted).

The alignment markers 84 and 221 may each be, as illustrated in (a)through (d) of FIG. 5, in the shape of, for example, (i) a belt, (ii) aquadrangle such as a square, (iii) a frame, or (iv) a cross. Thealignment markers 84 and 221 are thus not particularly limited in termsof shape.

In the case where a sufficient alignment is carried out before asubstrate scan and no alignment is carried out during a substrate scanas described above, the alignment markers 221 do not need to be providedalong a side of the vapor deposition region 210 of the film formationsubstrate 200, and may instead be provided at, for example, the fourcorners of the film formation substrate 200.

The substrate position is desirable corrected with use of the alignmentmarkers 84 and 221 before the film formation substrate 200 enters aregion (vapor deposition area) in which vapor deposition particles fromthe vapor deposition source 85 are deposited.

Thus, the alignment markers 221 (that is, the alignment marker sections220) of the film formation substrate 200 are preferably provided at sucha position that an alignment marker 221 is located away, upstream in thescanning direction, from the region (vapor deposition area) in whichvapor deposition particles from the vapor deposition source 85 aredeposited.

Thus, the alignment markers 221 (that is, the alignment marker sections220) are preferably provided, as illustrated in FIG. 1, such that (i) analignment marker 221 is located away, upstream in the substrate scanningdirection, from the region for vapor deposition region 210. In otherwords, in the case where reciprocating vapor deposition is carried out,the alignment markers 221 (that is, the alignment marker sections 220)are preferably located away, downstream and upstream in the substratescanning direction respectively, from respective opposite ends of thevapor deposition region 210 which ends are juxtaposed along thesubstrate scanning direction (see FIG. 1).

In the case where it is impossible to locate the alignment markers 221(that is, the alignment marker sections 220) away in the scanningdirection from the vapor deposition region 210 for the purpose ofsecuring the vapor deposition region 210, it is possible to locate thealignment markers 84 of the shadow mask 81 outside relative to theopenings 82 of the shadow mask 81 by decreasing the opening width of theopenings 82 of the shadow mask 81 along the scanning direction (that is,the width d5 along the long-axis direction; see FIG. 1). In other words,the alignment markers 84 of the shadow mask 81 may be provided so thatan alignment marker 84 is located away, upstream in the scanningdirection, from the opening 82 of the shadow mask 81 with respect to thevapor deposition region 210 during a scan. This arrangement makes itpossible to adjust the shadow mask 81 for an alignment, and thus carryout an alignment between the alignment markers 84 and the alignmentmarkers 221 before vapor deposition is carried out with respect to thefilm formation substrate 200.

In the case where the alignment markers 84 of the shadow mask 81 eachhave a width along the substrate scanning direction which width issmaller than the width (that is, the width d2 in the example illustratedin FIG. 1) of the shadow mask 81 along the substrate scanning directionas illustrated in (b) and (c) of FIG. 5, an alignment marker 84 ispreferably located, for the same reason as above, at an end of theshadow mask 81 which end is located downstream in the direction in whichthe substrate makes its entry (that is, an end of the shadow mask 81which end is located upstream in the substrate scanning direction). Inthe case where reciprocating vapor deposition is carried out, alignmentmarkers 84 are preferably located at both ends along the substratescanning direction (that is, at the four corners).

The following describes in detail a method for forming a pattern of anorganic EL layer by using, as a device for producing the organic ELdisplay device 1, the above vapor deposition device 50 of the presentembodiment.

The description below deals with an example case that, as describedabove, involves (i) using, as the film formation substrate 200, a TFTsubstrate 10 obtained after the hole injection layer/hole transfer layervapor deposition step (S2) is finished and (ii) carrying out, as apattern formation of an organic EL layer, a discriminative applicationformation of luminous layers 23R, 23G, and 23B during the luminous layervapor deposition step (S3).

The present embodiment assumed (i) 100 mm for the gap g2 between thevapor deposition source 85 and the shadow mask 81 (that is, the distancebetween a surface of the vapor deposition source 85 in which surface theemission hole 86 are provided and the shadow mask 81) and (iii) 200 μmfor the distance between the TFT substrate 10 serving as the filmformation substrate 200 and the shadow mask 81.

The present embodiment further assumed (i) for a substrate size of theTFT substrate 10, 320 mm along the scanning direction and 400 mm alongthe direction perpendicular to the scanning direction and (ii) forwidths of the vapor deposition region (display region), 260 mm for thewidth along the scanning direction (that is, the width d4) and 310 mmfor the width (that is, the width d3) along the direction perpendicularto the scanning direction.

The present embodiment assumed 360 μm (along the scanning direction)×90μm (along the direction perpendicular to the scanning direction) forwidths of the openings 15R, 15G, and 15B for the respective sub-pixels2R, 2G, and 2B of the TFT substrate 10. The present embodiment furtherassumed 480 μm (along the scanning direction)×160 μm (along thedirection perpendicular to the scanning direction) for a pitch betweenthe openings 15R, 15G, and 15B. The pitch between the openings 15R, 15G,and 15B (that is, a pitch between pixel openings) refers to a p itchbetween respective openings 15R, 15G and 15B for the sub-pixels 2R, 2G,and 2B adjacent to one another, but not to a pitch between sub-pixels ofan identical color.

The present embodiment used, as the shadow mask 81, a shadow mask having(i) a length of 600 mm along the width d1 (that is, the width along thedirection perpendicular to the scanning direction) along each long side81 a (corresponding to the long-axis direction) and (ii) a length of 200mm along the width d2 (that is, the width along the scanning direction)along each short side 81 b (corresponding to the short-axis direction).The shadow mask 81 had openings 82 (i) each having opening widths of 150mm (along the width d5 in the long-axis direction; see FIG. 1)×130 μm(along the width d6 in the short-axis direction; see FIG. 1), (ii)having a length of 350 μm along an interval d8 (see FIG. 1) betweenadjacent openings 82 and 82, and (iii) having a length of 480 μm along apitch p (see FIG. 1) between respective centers of adjacent openings 82and 82.

In the present embodiment, the shadow mask 81 preferably has a length ofnot less than 200 mm for the width d2 (that is, a short side length)along each short side 81 b. This is due to the reason below.

The vapor deposition rate is preferably not higher than 10 mm/s. If thevapor deposition rate exceeds 10 nm/s, a deposited film (that is, avapor deposition film) will have a decreased uniformity, thus resultingin a decreased organic EL property.

A vapor deposition film typically has a film thickness of not largerthan 100 nm. A film thickness of larger than 100 nm will requireapplication of a high voltage, and consequently increase powerconsumption of a produced organic EL display device. The above vapordeposition rate and the film thickness of a vapor deposition film allowestimation of a necessary vapor deposition period of 10 seconds.

Due to a limit in processing capability (tact time), a scan rate of 13.3mm/s or higher is at least necessary in order to, for example, completevapor deposition with respect to a 2 m-wide glass substrate in 150seconds. The processing time of 150 seconds is a tact time that allowsprocessing of about 570 glass substrates per day.

Securing the above vapor deposition period of 10 seconds at the abovescan rate requires the shadow mask 81 to have openings 82 each having awidth of at least 133 mm along the scanning direction.

Assuming that approximately 30 mm is appropriate for the distance(margin width d7; see FIG. 1) from each end of an opening 82 to acorresponding end of the shadow mask 81, the shadow mask 81 requires alength of 133+30+30=200 mm for the width along the scanning direction.

The shadow mask 81 thus preferably has a short side length (that is, thewidth d2) of not less than 200 mm. The short side length is, however,not limited to not less than 200 mm if there is a change in the vapordeposition rate, the film thickness of a vapor deposition film, and/orthe allowable amount of the tact time.

The present embodiment assumes 30 mm/s for the rate of scanning the TFTsubstrate 10.

FIG. 10 is a flowchart illustrating an example method for forming apredetermined pattern on the TFT substrate 10 with use of the vapordeposition device 50 of the present embodiment.

The following specifically describes, with reference to the flowillustrated in FIG. 10, a method of FIG. 10 for forming luminous layers23R, 23G, and 23B with use of the vapor deposition device 50.

The method first, as illustrated in FIG. 3, places (fixes) the shadowmask 81 above the vapor deposition source 85 in the vacuum chamber 60with use of the mask holding member 87 via the mask tension mechanism88, and horizontally holds the shadow mask 81 under tension by the masktension mechanism 88 so that no bending or elongation due to the selfweight is caused to the shadow mask 81. During this step, the methodsimultaneously (i) maintains the distance between the vapor depositionsource 85 and the shadow mask 81 with use of the mask holding member 87and (ii) carries out an alignment with use of the alignment markers 84of the shadow mask 81 in such a manner that the substrate scanningdirection is identical to the long-axis direction of the stripe-shapedopenings 82 provided in the shadow mask 81. The above step assembles themask unit 80 (preparation of a mask unit).

The method next inserts the TFT substrate 10 in the vacuum chamber 60and, as indicated in FIG. 10, carries out a rough alignment with use ofthe alignment markers 221 of the TFT substrate 10 as the film formationsubstrate 200 so that each sub-pixel column of an identical color of theTFT substrate 10 has a direction that is identical to the substratescanning direction (S11). The method holds the TFT substrate 10 with useof the substrate holding member 71 so that no bending due to the selfweight is caused to the TFT substrate 10.

The method then carries out a rough alignment between the TFT substrate10 and the shadow mask 81 (S12). The method further adjusts the gap g1(substrate-mask gap) between the TFT substrate 10 and the shadow mask 81so that the gap is uniform, and places the TFT substrate 10 and theshadow mask 81 so that they face each other. This allows the TFTsubstrate 10 and the shadow mask 81 to be aligned with each other (S13).The present embodiment adjusted the gap g1 between the TFT substrate 10and the shadow mask 81 to 200 μm throughout the entire TFT substrate 10.

The method next carried out vapor deposition of materials for the redluminous layer 23R with respect to the TFT substrate 10 while scanningthe TFT substrate 10 at 30 mm/s.

The above step carried out a substrate scan in such a manner that theTFT substrate 10 passed through a position above the shadow mask 81. Theabove step simultaneously carried out the scan and a precise alignmentwith use of the alignment markers 84 and 221 so that the openings 82 ofthe shadow mask 81 coincide with red sub-pixel 2R columns (S14).

The luminous layer 23R was made of (i)3-phenyl-4(1′-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) (host material)and (ii) bis(2-(2′-benzo[4,5-α]thienyl)pyridinato-N,C3′)iridium(acetylacetonate) (btp2Ir(acac)) (red-light emitting dopant). Thesematerials (red organic materials) were codeposited at respective vapordeposition rates of 5.0 nm/s and 0.53 nm/s to form the luminous layer23R.

Vapor deposition particles of the red organic materials which particlesare emitted from vapor deposition source 85 are deposited, through theopenings of the shadow mask 81 and onto positions facing the respectiveopenings 82 of the shadow mask 81, when the TFT substrate 10 passesthrough a position directly above the shadow mask 81. In the presentembodiment, the TFT substrate 10 having passed through the positiondirectly above the shadow mask 81 bad the red organic materialsdeposited thereon at a film thickness of 25 nm.

The following describes, with reference to FIG. 11, a method foradjusting an alignment in S14 above.

FIG. 11 is a flow chart illustrating the alignment adjustment method.The alignment is adjusted as illustrated in the flow of FIG. 11.

The method first captures a substrate position of the TFT substrate 10as the film formation substrate 200 with use of the image sensors 90(S21).

Next, the image detecting section 101, in the basis of the imagecaptured by the image sensors 90, detects respective images of (i) thealignment markers 221 of the TFT substrate 10 and of (ii) the alignmentmarkers 221 of the shadow mask 81 (S22).

Then, the computing section 102 calculates, from the respective imagesof the alignment markers 221 and 84, the images having been detected bythe image detecting section 101, the amount of positional differencebetween the alignment markers 221 and the alignment markers 84 todetermine a correction value for a substrate position by computation(S23).

Next, the motor drive control section 103 drives the motor 72 on thebasis of the correction value to correct the substrate position (S24).

Then, the image sensors 90 detect the substrate position as corrected,after which the steps S21 through S25 are repeated.

As described above, the present embodiment causes the image sensors 90to repeatedly detect a substrate position to correct it. This makes itpossible to simultaneously carry out a substrate scan and correct asubstrate position, and consequently to form a film while carrying out aprecise alignment between the TFT substrate 10 and the shadow mask 81.

The film thickness of the luminous layer 23R can be adjusted on thebasis of (i) a reciprocating scan (that is, reciprocating movement ofthe TFT substrate 10) and (ii) a scan rate. As indicated in FIG. 10, thepresent embodiment, after the scan in S14, (i) reversed the direction ofscanning the TFT substrate 10, and (ii) further deposited the redorganic materials by the same method as in S14 at the positions at whichthe red organic materials were deposited in S14 (S16). This formed aluminous layer 23R having a film thickness of 50 nm.

While in S14 through S16, the non vapor deposition region of the TFTsubstrate 10 was positioned directly above the openings 82 of the shadowmask 81 (for example, during the period after the step in S14 ends andbefore the scanning direction is reversed in S16), the shutter 89 wasinserted between the vapor deposition source 85 and the shadow mask 81to prevent vapor deposition particles from adhering to the non vapordeposition region (S15).

The following describes, with reference to FIGS. 12 and 13, a vapordeposition control in S15 above which vapor deposition control involvesthe shutter 89.

FIG. 12 is a flowchart illustrating a flow of a vapor deposition controlcarried out when vapor deposition is turned OFF, FIG. 13 is a flowchartillustrating a flow of a vapor deposition control carried out when vapordeposition is turned ON.

The description below first deals with the flow carried out when vapordeposition is turned OFF.

As indicated in FIG. 12, the substrate position of the TFT substrate 10serving as the film formation substrate 200 is constantly captured bythe image sensors 90 during a vapor deposition process as describedabove with reference to FIG. 11 (S31).

As indicated in FIG. 11, the image detecting section 101, on the basisof an image captured by the image sensors 90, detects respective imagesof (i) the alignment markers 221 of the TFT substrate 10 and of (ii) thealignment markers 221 of the shadow mask 81. The image detecting section101 detects, as an alignment marker 221 of the TFT substrate 10, arear-end marker indicative of the rear-end of the vapor depositionregion to detect the rear-end of the vapor deposition region 210 asindicated in FIG. 12 (S32).

When the image detecting section 101 has detected the rear-end of thevapor deposition region 210 as described above, the vapor depositionON/OFF control section 104 generates a vapor deposition OFF signal (33).

The shutter drive control section 105, upon receipt of the vapordeposition OFF signal from the vapor deposition ON/OFF control section104, closes the shutter 89 (S34). The shutter 89 thus closed preventsvapor deposition particles from reaching the mask, which achieves thestate of vapor deposition OFF (S35).

The description below now deals with the flow carried out when vapordeposition is turned ON.

As indicated in FIG. 13, the substrate position of the TFT substrate 10serving as the film formation substrate 200 is, as described above,constantly captured by the image sensors 90 during a vapor depositionprocess (S41).

The image detecting section 101 detects, as an alignment marker 221 ofthe TFT substrate 10, a start-end marker indicative of the start-end ofthe vapor deposition region to detect the start-end of the vapordeposition region 210 (S42).

When the image detecting section 101 has detected the rear-end of thevapor deposition region 210, the vapor deposition ON/OFF control section104 generates a vapor deposition ON signal (S43).

The shutter drive control section 105, upon receipt of the vapordeposition ON signal from the vapor deposition ON/OFF control section104, opens the shutter 89 (S44). The shutter 89 thus opened allows vapordeposition particles to reach the mask, which achieves the state ofvapor deposition ON (S45).

The reciprocating scan in S16 above is carried out as follows: First,through the steps S21 to S24, the substrate is scanned while a precisealignment is carried out. When the image detecting section 101 hasdetected the rear-end of the vapor deposition region 210, the motordrive control section 103 drives the motor to reverse the direction ofscanning the TFT substrate 10. During this operation, (i) vapordeposition turned OFF through the steps S31 to S35, (ii) the position ofthe TFT substrate 10 is corrected through the steps S21 to S24, and(iii) vapor deposition is turned ON at the start-end of the vapordeposition region 210 through the steps S41 to S45. Then the substrateis scanned again while a precise alignment is carried out through thesteps S21 to S24.

The above operation forms a luminous layer 23R having a desired filmthickness as indicated in S16.

The present embodiment, after the step S16, retrieved from the vacuumchamber 60 the TFT substrate 10 on which the luminous layer 23R wasformed (S17), and then formed a green luminous layer 23G, with use of(i) a mask unit 80 for forming the green luminous layer 23G and (ii) avacuum chamber 60, in a manner similar to the above process of formingthe luminous layer 23R.

The present embodiment, after thus forming the luminous layer 23G,formed a blue luminous layer 23B, with use of (i) a mask unit 80 forforming the blue luminous layer 23B and (iii) a vacuum chamber 60, in amanner similar to the respective processes of forming the luminouslayers 23R and 23G.

Specifically, the present embodiment, for each of the processes offorming the luminous layers 23G and 23B, prepared a shadow mask 81having openings 82 at positions for a corresponding one of the luminouslayers 23G and 23B. The present embodiment placed each shadow mask 81 ina vacuum chamber 60 for forming a corresponding one of the luminouslayers 23G and 23B, and thus scanned the TFT substrate 10 for vapordeposition while carrying out an alignment so that the openings 82 ofthe shadow mask 81 coincide with a corresponding one of (i) sub-pixel 2Gcolumns and (ii) sub-pixel 2B columns.

The luminous layer 23G was made of (TAZ) (host material) and Ir(ppy) 3(green-light emitting dopant). These materials (green organic materials)were deposited at respective vapor deposition rates of 5.0 nm/s and 0.67nm/s to form the luminous layer 23G.

The luminous layer 23B was made of TAZ (host material) and 2-(4′-t-butylphenyl)-5-(4″-biphenylyl)-1,3,4-oxadiazole (t-Bu PBD) (blue-lightemitting dopant). These materials (blue organic materials) werecodeposited at respective vapor deposition rates of 5.0 nm/s and 0.67nm/s to form the luminous layer 23B.

The luminous layers 23G and 23B each had a film thickness of 50 nm.

The above steps prepared a TFT substrate 10 on which were formedrespective patterns of the luminous layers 23R, 23G, and 23B havingrespective colors of red (R), green (G), and blue (B).

According to the present embodiment, it is possible to produce anorganic EL display device 1 larger in size than conventional organic ELdisplay devices through production involving the use of (i) the abovevapor deposition device 50 as a device for producing the organic ELdisplay device 1 and (ii) the above vapor deposition method.

Conventional mask vapor deposition methods have each carried out vapordeposition in a state in which a shadow mask and a film formationsubstrate are integrated with each other by, for example, (i) aligningthe shadow mask and the film formation substrate with each other andattaching them to each other or (ii) closely attaching the shadow maskand the film formation substrate to each other by magnetic force.Further, conventional mask vapor deposition methods have, when movingthe shadow mask relative to the film formation substrate, each moved theshadow mask relative to the film formation substrate in a state in whicha vapor deposition source is fixed to the vacuum chamber, and thus useda shadow mask that is substantially equal in size to the film formationsubstrate.

In consequence, conventional mask vapor deposition methods have eachproblematically caused a gap between the film formation substrate andthe shadow mask due to self-weight bending and/or elongation of theshadow mask, and thus caused vapor deposition mispositioning and/orcolor mixture, with the result of difficulty in achieving highresolution.

In addition, conventional mask vapor deposition methods have each used avapor deposition source fixed to the vacuum chamber. Thus, in the casewhere (i) a small-sized shadow mask is used and (ii) vapor deposition issequentially carried out with respect to partial regions of the filmformation substrate while the shadow mask is moved, it is necessary to(i) use an adhesion prevention shielding plate so that no vapordeposition particles are adhered to the film formation substrate in aregion that is not covered by the shadow mask and (ii) sequentially movethe shielding plate in synchronization with the shadow mask. Such anecessity requires a complex structure.

Further, in the case where no movable shielding plate is used, and inaccordance with movement of the shadow mask, (i) each vapor depositionsource is turned ON which corresponds to a region for which the movedshadow mask has an opening and (ii) the other vapor deposition sourcesare turned OFF, it is necessary to use a highly controlled planar vapordeposition source having a substrate size and a uniform evaporationdistribution. In addition, such a vapor deposition device will have alow processing efficiency because a vapor deposition source in the OFFstate is not in operation.

In contrast, the present embodiment, as described above, (i) integratesthe shadow mask 81 with the vapor deposition source 85 (that is, fixesthe respective positions relative to each other) to secure a fixed gapg1 between the TFT substrate 10 serving as the film formation substrate200 and the shadow mask 81, and (ii) passes the TFT substrate 10 througha position directly above the shadow mask 81 to scan the TFT substrate10 so that vapor deposition particles having passed through the openings82 of the shadow mask 81 are deposited onto the TFT substrate 10.

More specifically, the present embodiment (i) uses the mask unit 80 and(ii) for example, moves the TFT substrate 10 relative to the mask unit80 in a state in which there is a fixed gap g1 between the TFT substrate10 and the mask unit 80. This arrangement causes vapor depositionparticles emitted from the emission holes 86 of the vapor depositionsource 85 to be sequentially deposited onto the vapor deposition region210 in the vapor deposition surface of the TFT substrate 10 through theopenings 82 of the shadow mask 81. The above arrangement thus makes itpossible to form a predetermined pattern on the vapor deposition region210 of the TFT substrate 10.

The present embodiment, as described above, (i) does not fix the shadowmask 81 and the TFT substrate 10 to each other, but allows them tofreely move relative to each other, and (ii) fixes the respectivepositions of the TFT substrate 10, the shadow mask 81, and the vapordeposition source 85 relative to one another. With this arrangement, itis possible to carry out vapor deposition while scanning the TFTsubstrate 10 by using, as described above, a shadow mask 81 that issmaller in area than the vapor deposition region 210 of the TFTsubstrate. The above arrangement thus eliminates the need to use alarge-sized shadow mask that is equivalent in size to the TFT substrate10 as conventional.

The above arrangement solves the problems caused in conventional maskvapor deposition methods, for example, (i) self-weight bending andelongation due to a large-sized shadow mask and (ii) a size limit due toa limit in original length. The above arrangement consequently makes itpossible to not only form a pattern of an organic layer on a large-sizedsubstrate, but also form such a pattern with high positional accuracyand high resolution.

The present embodiment, which uses a shadow mask 81 smaller in area thanthe TFT substrate 10 as described above, prevents such problems asfollows: A larger sized shadow mask requires a frame for holding theshadow mask to be extremely large and extremely heavy, which in turnrequires a device handling such a frame to be also extremely large andcomplex and which consequently poses a hazard in handling such a deviceduring a production process. The above arrangement, as a result,facilitates device design (smaller sized device) and improves safety in,for example, mask replacement.

The present embodiment, which fixes the respective positions of theshadow mask 81 and the vapor deposition source 85 relative to each otheras described above, simply needs to, for example, move the TFT substrate10 for a substrate scan. The present embodiment thus eliminates the needto, as conventional, (i) move the shadow mask in a state in which theshadow mask is closely attached to the film formation substrate or (ii)move a vapor deposition source relative to the film formation substrateto which the shadow mask is closely attached as above.

The above arrangement thus eliminates the unnecessity to include acomplicated mechanism for (i) firmly fixing the shadow mask and the filmformation substrate to each other to prevent mispositioning thereof and(ii) moving both the shadow mask and the film formation substrate. Theabove arrangement further eliminates the unnecessity to carry outprecise vapor deposition amount control and movement control for a vapordeposition source for the purpose of achieving a uniform film thickness.

In the present embodiment, vapor deposition particles scattered (flying)substantially vertically from the vapor deposition source 85 toward theshadow mask 81 pass through the openings 82 of the shadow mask 81 andfly substantially vertically to be adhered to the TFT substrate 10 toform a vapor deposition film 211. During this operation, the presentinvention maintains a fixed gap g1 between the TFT substrate 10 and theshadow mask 81 also while the TFT substrate 10 is scanned. This makes itpossible to form a vapor deposition film 211 having a uniform width anda uniform film thickness.

Conventional art has had the following problem: Since a substrate and avapor deposition source are fixed in a vacuum chamber, in a case where aflying distribution of vapor deposition particles scattered (flying)from the vapor deposition source extends along a substrate scanningdirection, the flying distribution directly makes a film thicknessdistribution, thus causing a screen to have a non-uniform luminance.

In contrast, the present embodiment, which carries out vapor depositionwhile scanning the TFT substrate 10 as described above, has a uniformflying distribution of vapor deposition particles along the substratescanning direction even in a case where the distribution extends alongthe scanning direction. This arrangement prevents non-uniformity inluminance over the screen.

The present embodiment thus makes it possible to form a pattern of anorganic layer that is uniform over a surface of the substrate, andconsequently to produce an organic EL display device 1 having highdisplay quality.

In addition, carrying out vapor deposition while scanning the TFTsubstrate 10 as described above makes it possible to form a highlyuniform vapor deposition film 211 on the TFT substrate 10 whilemaintaining high material use efficiency.

The present embodiment, which secures a gap g1 between the TFT substrate10 and the shadow mask 81, prevents the TFT substrate 10 from cominginto contact with the shadow mask 81, thus preventing the shadow mask 81from damaging the TFT substrate 10. Further, the present embodimenteliminates the need to form on the TFT substrate 10 a mask space forpreventing the shadow mask 81 from damaging the organic EL element 20 onthe TFT substrate 10. The present embodiment thus prevents the organicEL display device 1 from becoming expensive due to formation of such amask spacer.

The present embodiment, which fixes the respective positions of theshadow mask 81 and the vapor deposition source 85 relative to each otheras described above, eliminates the need to include a shielding plate forpreventing vapor deposition particles from adhering to an unnecessaryportion (that is, the non vapor deposition region). The presentembodiment, even if it uses such a shielding plate, can simply fix theshielding plate, and can thus have a simple structure.

The present embodiment, which uses a vapor deposition source 85 that isequal in size to the shadow mask, does not require a planar vapordeposition source that is equal in size to the substrate. Further, thepresent embodiment is simply required to control uniformity inevaporation distribution along only the direction perpendicular to thesubstrate scanning direction.

In addition, the present embodiment does not need to, as conventional,switches ON/OFF a vapor deposition source that is equal in size to thesubstrate, and thus has an improved processing efficiency.

The present embodiment is arranged such that the mask unit 80 is fixedlyplaced in the vacuum chamber 60. The present embodiment is, however, notlimited to such an arrangement.

The vapor deposition device 50 may include, instead of the substratemoving mechanism 70, (i) a substrate holding member 71 (for example, anelectrostatic chuck) for fixing the film formation substrate 200 and(ii) a mask unit moving mechanism (mask unit moving means; adjustingmeans) for moving the mask unit 80 relative to the film formationsubstrate 200 while maintaining the respective positions of the shadowmask 81 and the vapor deposition source 85 relative to each other. Thevapor deposition device 50 may alternatively include both the substratemoving mechanism 70 and the mask unit moving mechanism.

In other words, the film formation substrate 200 and the mask unit 80simply need to be so provided that at least one of them is moveablerelative to the other. The advantages of the present invention can beachieved regardless of which of the film formation substrate 200 and themask unit 80 is arranged to move.

The mask unit moving mechanism, the mask tension mechanism 88, and thesubstrate moving mechanism 70 each further function as adjusting meansfor adjusting the respective positions of the film formation substrate200 and the shadow mask 81 relative to each other.

The substrate moving mechanism 70 and the mask unit moving mechanism mayeach be, for example, a roller-type moving mechanism or a hydraulicmoving mechanism.

In the case where the mask unit 80 is moved relative to the filmformation substrate 200 as described above, the mask unit 80 isarranged, for example, such that the shadow mask 81 and the vapordeposition source 85 are moved, relative to the film formation substrate200, together with the mask holding member 87 (for example, an identicalholder). This arrangement makes it possible to move the mask unit 80relative to the film formation substrate 200 while maintaining therespective positions of the shadow mask 81 and the vapor depositionsource 85 relative to each other.

In the case where the mask unit 80 is moved relative to the filmformation substrate 200 as described above, the shadow mask 81 and thevapor deposition source 85 are preferably so held by, for example, anidentical holder (holding member; holding means) as to be integratedwith each other.

In the case where the film formation substrate 200 is moved relative tothe mask unit 80 as described above, the shadow mask 81 and the vapordeposition source 85 simply need to be fixed in position relative toeach other, but do not necessarily need to be integrated with eachother.

The mask unit 80 may be arranged, for example, such that (i) the vapordeposition source 85 is fixed to, for example, a bottom wall among innerwalls of the vacuum chamber 60, (ii) the mask holding member 87 is fixedto one of the inner walls of the vacuum chamber 60, and consequently(iii) the shadow mask 81 and the vapor deposition source 85 are fixed inposition relative to each other.

The mask holding member 87 and the mask tension mechanism 88 may beprovided integrally with each other. For example, the mask holdingmember 87 may be a holding member such as a roller that applies tensionto the film formation substrate 200 and that holds the film formationsubstrate 200 by mechanically sandwiching it.

The mask holding member 87 may alternatively be arranged to (i) includea slider mechanism and (ii) in a state in which the mask tensionmechanism 88 sandwiches the shadow mask 81, be slid to apply tension tothe shadow mask 81.

In the present embodiment, the mask tension mechanism 88 for applyingtension to the shadow mask 81 is provided, not as a jig (mask jig;fitting) for the film formation substrate 200 as conventional, but as apart (mechanism) of the vapor deposition device 50.

The present embodiment (i) secures a fixed gap g1 between the filmformation substrate 200 and the shadow mask 81 as described above to usea vapor deposition system that does not allow the film formationsubstrate 200 and the shadow mask 81 to be closely attached to eachother, and (ii) includes the mask tension mechanism 88 in the vapordeposition device 50. The present embodiment can thus reduce bending andthermal expansion of the shadow mask 81. Further, the present inventioncan adjust alignment accuracy for the shadow mask 81 by tension inaccordance with a situation occurring during vapor deposition (forexample, thermal expansion of the shadow mask 81 and/or finishingaccuracy of the film formation substrate 200.

The shadow mask 81 can be subjected to tension in, for example, the case(I) or (II) below so that the size of the shadow mask 81 is furtherincreased in correspondence with the film formation substrate 200 (morespecifically, a substrate pattern such as a pixel pattern).

(I) The shadow mask 81 has openings 82 each of which is designed, whenthe shadow mask 81 is prepared, to be smaller in size than desired, andthe openings will each have a desired size only after the shadow mask issubjected to tension (that is, the mask is designed to have intendeddimensions when there is (i) no bending in the mask and (ii) an extratension applied to the mask.

(II) The pixel pattern formed on the film formation substrate 200 hasbeen slightly elongated due to heat history of the film formationsubstrate 200.

Adjusting tension applied to the shadow mask 81 as described abovesimultaneously (i) corrects self-weight bending and/or thermal bendingof the shadow mask 81 and (ii) in accordance with the substrate pattern,adjusts the amount of elongation of the shadow mask 81 (that is, theelongation rate for the shadow mask 81).

When expanded by tension, the shadow mask 81 is bent. The mask tensionmechanism 88 is thus preferably has a set minimum tension (MIN).

In the case where, for example, the vapor deposition device hasdetermined that the shadow mask 81 is under excessive tension, the masktension mechanism 88 is moved in such a direction as to ease thetension. Excessively easing the tension may, however, cause the shadowmask 81 to bend so excessively as to come into contact with the filmformation substrate 200. The mask tension mechanism thus preferably hasa set minimum tension in order to at least prevent contact between thefilm formation substrate 200 and the shadow mask 81.

In comparison between (i) the problem of mispositioning between theshadow mask 81 and the film formation substrate 200 and (ii) the problemof bending in the shadow mask 81, the latter problem of the bending maycause a severe defect in a formed vapor deposition film 211. The masktension mechanism 88 thus preferably has a set minimum tension topreferentially prevent the bending.

The mask tension mechanism 88 preferably also has a set maximum tension(MAX). In the case where, for example, the vapor deposition device hasdetermined that the shadow mask 81 is under insufficient tension, themask tension mechanism 88 is moved in such a direction as to increasethe tension. An excessive tension may, however, crack or distort theshadow mask 81. The mask tension mechanism 88 thus preferably has a setmaximum tension to present such a problem.

Whether the shadow mask 81 is subjected to an excessive or insufficienttension can be determined from, for example, the positional relationshipbetween (i) the alignment markers 84 of the shadow mask 81 and, (ii) thealignment markers 84 of the shadow mask 81 and (ii) the alignmentmarkers 221 of the film formation substrate 200.

The above determination may alternatively be made by (i) providing theshadow mask 81 with a reference position marker such as an alignmentmarker for an absolute alignment which alignment marker is used to placethe shadow mask 81 at an absolute position and (ii) referring to thepositional relationship between the above reference marker and areference position provided on the device side.

Even in a case where the shadow mask 81 is expanded by tension, it canstill be used while the expansion is within a margin allowed by design.The shadow mask 81 is, however, desirably prepared to have a sizesmaller than design absolute dimensions (designed values) in priorconsideration of, for example, expansion due to temperature.

It is possible to finely adjust a vapor deposition position and controlthermal deformation of the shadow mask 81 by, as described above, (i)preparing a shadow mask 81 with a size smaller than designed values toabsorb thermal expansion of the shadow mask 81 and (ii) applying tensionto the shadow mask 81 in order to adjust an alignment (that is, analignment between the film formation substrate 200 and the shadow mask81) before vapor deposition on the film formation substrate 200.

The alignment between the film formation substrate 200 and the shadowmask 81 may be carried out by (i) a method of placing the shadow mask 81at a home position (that is, a default position set for the device) andaligning the film formation substrate 200 with the shadow mask 81serving as a basis (mask-based) or (ii) a method of aligning the shadowmask 81 with the film formation substrate 200 serving as a basis method(substrate-based).

The present embodiment describes an example case in which the openings82 of the shadow mask 81 are aligned with the emission holes 86 of thevapor deposition source 85 so that the emission holes 86 are eachpositioned inside one of the openings 82 in a plan view and that theopenings 82 are provided in a one-to-one correspondence with theemission holes 86. The present embodiment is, however, not limited tosuch an arrangement. The openings 82 do not necessarily need to beprovided (i) to face the emission holes 86 or (ii) in a one-to-onecorrespondence with the emission holes 86.

Specifically, the openings 82 may each have a pitch p that is unequal tothe pitch of an emission hole 86. Further, the widths d5 and d6 of anopening 82 do not need to match the opening width (opening diameter) ofan emission hole 86. For example, in the example illustrated in FIG. 1,the emission holes 86 may each have an opening diameter that is largeror smaller than the width d6 of an opening 82. In addition, a pluralityof emission holes 86 may be provided to correspond to a single opening82, whereas a single emission hole 86 may be provided to correspond to aplurality of openings 82. Further, a part (that is, at least one) of aplurality of emission holes 86 or a partial region of as emission hole86 may be provided to face a non-opening section (that is, a region ofthe shadow mask 81 which region is other than the openings 82; forexample, a region between openings 82 and 82).

To reduce the number of vapor deposition particles adhering to anon-opening section of the shadow mask 81 and thus improve material useefficiency as much as possible, the emission holes 86 are preferablyprovided to face the openings 82 in such a manner that at least aportion (that is, at least a partial region) of each emission hole 86coincides with one or more openings 82. Further, the emission holes 86are more preferably provided to (i) face the openings 82 and (ii) beeach positioned inside one of the openings 82 in a plan view.

To improve material use efficiency, the openings 82 and the emissionholes 86 are desirably provided in a one-to-one correspondence with theeach other.

The present embodiment describes an example case in which both (i) theopenings 82 of the shadow mask 81 and (ii) the emission holes 86 of thevapor deposition source 85 are arranged one-dimensionally (that is, in alinear manner). The present embodiment is, however, not limited to suchan arrangement. It is alternatively possible to arrange both theopenings 82 of the shadow mask 81 and the emission holes 86 of the vapordeposition source 85 two-dimensionally (that is, in a planar manner).

The present embodiment describes an example case involving a pluralityof openings 82 in the shadow mask 81 and a plurality of emission holes86 in the vapor deposition source 85. The present embodiment is,however, not limited to such an arrangement. The shadow mask 81 issimply required to include at least one opening 82, whereas the vapordeposition source 85 is simply required to include at least one emissionhole 86.

In other words, the present embodiment may alternatively be arrangedsuch that the shadow mask 81 includes only one opening 82 and that thevapor depositions source 85 includes only one emission hole 86. Eventhis arrangement makes it possible to form a predetermined pattern onthe film formation substrate 200 by (i) moving at least one of the maskunit 80 and the film formation substrate 200 relative to the other and(ii) sequentially depositing vapor deposition particles onto the vapordeposition region 210 of the film formation substrate 200 through theopenings 82 of the shadow mask 81. There is no particular limit to therespective numbers of the openings 82 and the emission holes 86. Thenumbers can each be set as appropriate in accordance with, for example,the size of the film formation substrate 200.

The present embodiment describes an example case in which the shadowmask 81 includes slit-shaped openings 82 (specifically, stripe-shapedopenings 82 extending in the substrate scanning direction). The shape ofthe openings 82 can, however, be simply set as appropriate to form adesired vapor deposition pattern, and is thus not particularly limitedto any specific one.

The openings 82 may each have the shape of, for example, a slot. Even inthis case, the openings 82 desirably each extend in a direction that is,in the case where the film formation substrate 200 is an array substratesuch as a TFT substrate 10, identical to the column direction ofsub-pixels provided in the shape of a stripe and having an identicalcolor.

The present embodiment describes an example case in which the substratemoving mechanism 70 includes an electrostatic chuck as the substrateholding member 71. Using the electrostatic chuck to hold the filmformation substrate 200 as described above can effectively preventself-weight bending of the film formation substrate 200.

The present embodiment is, however, not limited to such an arrangement.Depending on the size of the film formation substrate 200, the substrateholding member 71 may be, for example, a holding member such as a rollerfor applying tension to the substrate to mechanically sandwich and holdit.

The present embodiment describes an example case involving, as theshutter 89, a shutter capable of moving in a space between the shadowmask 81 and the vapor deposition source 85. The present embodiment is,however, not limited to such an arrangement. The present embodiment mayalternatively be arranged, for example, such that (i) the vapordeposition source 85 is a vapor deposition source 85 that can beswitched ON/OFF and that (ii) when a portion of the film formationsubstrate 200 which portion needs no vapor deposition is positioned in aregion (that is, a region facing an opening 82) that faces an openingregion of the shadow mask 81, vapor deposition is turned OFF so that novapor deposition particles fly.

The present embodiment may alternatively be arranged, for example, suchthat the shutter 89 is a shutter 89 provided to the vapor depositionsource 85 and serving to close the emission holes 86 of the vapordeposition 85 source to block emission (release) of vapor depositionparticles.

The present embodiment may further alternatively be arranged such thatinstead of providing the shutter 89 to the emission holes 86, the vapordeposit source 85 is switched ON/OFF on the basis of a vapor depositionON signal or a vapor deposition OFF signal to stop the generation itselfof vapor deposition particles.

Regardless of the arrangement, the present embodiment, which uses ashadow mask 81 with an area smaller than the substrate area (substratesize) and integrates the shadow mask 81 and the vapor deposition source85 with each other as described above, (i) eliminates the need to, asconventional, carry out OFF/OFF control of a part of a plurality ofvapor deposition sources (or emission holes) and (ii) simply needs toturn ON or OFF the vapor deposition source 85 itself, that is, allemission holes 86, for a non vapor deposition region. The presentembodiment thus requires no complicated mechanism and consequentlyallows ON/OFF control to be easily carried out.

The present embodiment describes as example method for producing, asdescribed above, an organic EL display device 1 of the bottom emissiontype, which extracts light from the TFT substrate 10 side. The presentembodiment is, however, not limited to such production. The presentinvention is also suitably applicable to an organic EL display device 1of a top emission type, which extracts light from the sealing substrate40 side.

The present embodiment describes an example case that uses a glasssubstrate as a supporting substrate for each of the TFT substrate 10 andthe sealing substrate 40. The present embodiment is, however, notlimited to such an arrangement.

The respective supporting substrates for the TFT substrate 10 and thesealing substrate 40 may, for example, each be, other than a glasssubstrate, a transparent substrate such as a plastic substrate in thecase where the organic EL display device 1 is an organic EL displaydevice of the bottom emission type. In the case where the organic ELdisplay device 1 is an organic EL display device of the top emissiontype, the respective supporting substrates may, for example, each be anopaque substrate such as a ceramics substrate other than the abovetransparent substrate.

The present embodiment describes an example case involving an anode (inthe present embodiment, the first electrode 21) formed in a matrix. Theanode is, however, not particularly limited in terms of shape, material,or size as long as it has the function as an electrode for supplyingpositive holes to an organic EL layer. The anode may have, for example,a stripe shape. By the nature of an organic EL element, at least one ofthe anode and the cathode is preferably transparent. An organic ELelement typically includes a transparent anode.

The present embodiment is not limited by the above values for the scanrate, the vapor deposition rate, and the number of reciprocating scansfor the TFT substrate 10. Adjusting the above values makes it possibleto achieve a desired film thickness in a desired tact time.

The present embodiment is also not limited by the above values for (i)the gap g1 between the TFT substrate 10 serving as the film formationsubstrate 200 and the shadow mask 81 and (ii) the gap g2 between thevapor deposition source 85 and the shadow mask 81.

The gap g1 between the TFT substrate 10 and the shadow mask 81 may beadjusted as appropriate as long as (i) the gap is fixed and (ii) the TFTsubstrate 10 and the shadow mask 81 do not come into contact with eachother.

The gap g2 between the vapor deposition source 85 and the shadow mask 81may be adjusted as appropriate in consideration of (i) distribution of,for example, spatial spread of vapor deposition particles and (ii)influence of heat radiated from the vapor deposition source 85.

The present embodiment describes an example case in which the computingsection 102, when it determines, from an image detected by the imagedetecting section 101, the amount of movement of the film formationsubstrate 200 and the shadow mask 81 relative to each other, determinesa correction value for a substrate position of the film formationsubstrate 200 by computation from the amount of positional differencebetween the alignment markers 221 and the alignment markers 84. Thepresent embodiment is, however, not limited to such an arrangement. Thepresent embodiment may alternatively be arranged, for example, such thatthe computing section determines a correction value for a substrateposition of the film formation substrate 200 from the amount ofpositional difference between the alignment markers 221 and thealignment markers 84 with reference to a lookup table stored in astorage section (storage means) in advance.

More specifically, the control circuit 100 may further include: astorage section that stores the lookup table; and a selecting sectionthat selects (determines) a correction value for a substrate position ofthe film formation substrate 200 from the amount of positionaldifference between the alignment markers 221 and the alignment markers84 with reference to the lookup table.

Embodiment 2

The present embodiment is described below mainly with reference to FIGS.14 through 16.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiment 1 above. Constituent elements of the presentembodiment that are identical in function to their respectiveequivalents described in Embodiment 1 are each assigned the samereference numeral, and are not described here.

FIG. 14 is a cross-sectional view illustrating a variation of theorganic EL display device 1.

The present embodiment describes a method for producing, as a variationof the organic EL display device 1 illustrated in FIG. 8, the organic ELdisplay device 1 illustrated in FIG. 14.

The present embodiment varies, for optimization, the respective filmthicknesses of its hole transfer layers for each of the respectivecolors of R, G, and B, that is, for each of the sub-pixels 2R, 2G, and2B.

The organic EL display device 1 illustrated in FIG. 14 includes, insteadof the hole injection layer/hole transfer layer 22 included in theorganic EL display device 1 illustrated in FIG. 8, a hole injectionlayer 27 and hole transfer layers 28R, 28G, and 28B. The hole transferlayers 28R, 28G, and 28B are made of an identical material, and aredifferent from one another in film thickness only.

As illustrated in FIG. 14, the present embodiment is arranged to include(i) within the opening 15R of the sub-pixel 2R, the hole transfer layer28R and the luminous layer 23R stacked in that order from the holeinjection layer 27 side, (ii) within the opening 15G of the sub-pixel2G, the hole transfer layer 28G and the luminous layer 23G stacked inthat order from the hole injection layer 27 side, and (iii) within theopening 15B of the sub-pixel 2B, the hole transfer layer 28B and theluminous layer 23B stacked in that order from the hole injection layer27 side, the combinations (i), (ii), and (iii) being adjacent to oneanother.

The present embodiment carries out a discriminative applicationformation (pattern formation) of the hole transfer layers 28R, 28G, and28B in addition to the luminous layers 23R, 23G, and 23B.

FIG. 15 is a flowchart indicating successive steps for producing theorganic EL display device 1 illustrated in FIG. 14, (a) through (c) ofFIG. 16 are each a plan view illustrating an alignment carried outbetween the TFT substrate 10 and the shadow mask 81 during vapordeposition for the red sub-pixel 2R, the green sub-pixel 2G, and theblue sub-pixel 2B, respectively, (a) of FIG. 16 is a plan viewillustrating vapor deposition for the red sub-pixel 2R, (b) of FIG. 16is a plan view illustrating vapor deposition for the green sub-pixel 2G,a ad (c) of FIG. 16 is a plan view illustrating vapor deposition for theblue sub-pixel 2B.

The method of the present embodiment for producing the organic ELdisplay device as indicated in FIG. 15, includes a hole injection layervapor deposition step (S51) and a hole transfer layer vapor depositionstep (S52) in place of the hole injection layer/hole transfer layervapor deposition step (S2).

The steps other than the step S2 are identical to the respectivecorresponding steps described in Embodiment 1 above. The presentembodiment thus does not describe the steps other than the holeinjection layer vapor deposition step (S51) and the hole transfer layervapor deposition step (S52).

The present embodiment prepares a TFT substrate 10 as in the TFTsubstrate preparing step (S1) of Embodiment 1 above. The presentembodiment then carries out, with respect to the TFT substrate 10, (i) abake under a reduced pressure for dehydration and (ii) an oxygen plasmatreatment for surface washing of the first electrode 2 as in Embodiment1 above.

The present embodiment next carries out vapor deposition of a holeinjection layer 27 on the TFT substrate 10 throughout the entire displayregion with use of a conventional vapor deposition device as inEmbodiment 1 above (S51).

In the present embodiment, the hole injection layer 27 was made ofm-MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)-triphenylamine),and had a film thickness of 30 nm.

The present embodiment then carries out a discriminative applicationformation of the hole transfer layers 28R, 28G, and 28B with use of thevapor deposition device 50 described in Embodiment 1 above (S52).

As illustrated in (a) through (c) of FIG. 16, the TFT substrate 10includes, as alignment markers 221, (i) an alignment marker 221R for thesub-pixel 2R, (ii) an alignment marker 221G for the sub-pixel 2G, and(iii) an alignment marker 221B for the sub-pixel 2B. Further, the shadowmask 81 includes, as alignment markers 84, (i) an alignment marker 84Rfor the sub-pixel 2R, (ii) an alignment marker 84G for the sub-pixel 2G,and (iii) an alignment marker 84B for the sub-pixel 2B.

For vapor deposition of the hole transfer layers 28R, 28G, and 28B, whenan alignment is carried out between the TFT substrate 10 and the shadowmask 81 as indicated in S11 and S14 of FIG. 10, the alignment is firstcarried out with use of the alignment markers 84R and 221R for thesub-pixel 2R.

The present embodiment next forms the hole transfer layer 28R for thesub-pixel 2R by a vapor deposition method that is identical, except forthe material, to the method for forming the luminous layers 23R, 23G,and 23B.

The present embodiment then shifts the TFT substrate 10, on which thehole transfer layer 28R has been formed, in the direction perpendicularto the substrate scanning direction. The present embodiment thus carriesout an alignment with use of the alignment markers 84G and 221G for thesub-pixel 2G and forms the hole transfer layer 28G for the sub-pixel 2Gsimilarly to the hole transfer layer 28R.

The present embodiment next shifts the TFT substrate 10, on which thehole transfer layer 28G has been formed, in the direction perpendicularto the substrate scanning direction. The present embodiment thus carriesout an alignment with use of the alignment markers 84B and 221B for thesub-pixel 2B and forms the hole transfer layer 28B for the sub-pixel 2Bsimilarly to the hole transfer layers 28R and 28G.

The hole transfer layers 28R, 28G, and 28B can be varied in filmthickness by, for example, changing, for each of the sub-pixels 2R, 2G,and 2B, (i) the rate of scanning the TFT substrate 10 serving as thefilm formation substrate 200 and/or (ii) the number of reciprocating theTFT substrate 10.

The present embodiment sets the respective film thicknesses of the holetransfer layers 28R, 28G, and 28B so that the sub-pixels 2R, 2B, and 2G(that is, the hole transfer layers 28R, 28B, and 28G) are, in thissequence, in order of increasing film thickness.

The present embodiment used α-NPD as a material for the hole transferlayers 28R, 28G, and 28B, and set the respective film thicknesses to 50nm, 150 nm, and 100 nm.

The present embodiment, which can vary the respective film thicknessesof the hole transfer layers 28R, 28G, and 28B for each color (that is,for each of the sub-pixels 2R, 2G, and 2B) as described above, canoptimize a microcavity effect for each color.

The microcavity effect refers to a phenomenon in which an opticalresonant structure formed by the sub-pixels 2R, 2G, and 2B causes lightgenerated between the first electrode 21 and the second electrode 26 tomove back and forth and thus resonate, with the result of a sharperemission spectrum and improvement in color purity.

Since an optical distance that causes an optimal microcavity effect isdifferent depending on the emission wavelength of each color, it isnecessary to adjust the optical distance for each color. One method tomake such an adjustment is a method of varying the film thickness of aparticular organic layer as described above.

The present embodiment varied the respective film thicknesses of thehole transfer layers 28R, 28G, and 28B for each color as describedabove. The present embodiment is, however, not limited to such anarrangement. The present embodiment may alternatively vary, by themethod of the present invention, the film thickness of not only the holetransfer layers 28R, 28G, and 28B but also, for example, the holeinjection layer 27, the electron transfer layer 24, the electroninjection layer 25, or the carrier blocking layer described above (notshown in the drawings) for each color.

The present embodiment, which forms, by the alignment method illustratedin (a) through (c) of FIG. 16, the hole transfer layers 28R, 28G, and28B individually for the respective sub-pixels 2R, 2G, and 2B asdescribed above, eliminates the need to replace the shadow mask 81 foreach of the sub-pixels 2R, 2G, and 2B. The present embodiment furthermakes it possible to form the hole transfer layers 28R, 28G, and 28B ina single vacuum chamber 60.

The present embodiment can, in addition, control the film thicknesses bymeans of, for example, the rate of scanning the TFT substrate 10 and/orthe number of reciprocating the TFT substrate 10. The present embodimentthus eliminates the need to change, for each of the hole transfer layers28R, 28G, and 28B, the rate (vapor deposition rate) at which vapordeposition particles are emitted from the vapor deposition source 85 byevaporation.

Conventional art has had the necessity to, in the case where, forexample, a crucible is used as a vapor deposition source, control thefilm thickness by means of temperature in order to change the vapordeposition rate. This has led to, for example, (i) the problem that ittakes a long time to stabilize temperature and/or (ii) the problem thata variation in temperature tends to cause instability in vapordeposition rate.

The present embodiment can, in contrast, control the film thickness bymeans of not temperature but the scan rate or the reciprocating numberas described above. The present embodiment thus does not pose the aboveproblems.

The present embodiment describes an example case that, as describedabove, provides (i) the TFT substrate 10 with the alignment markers221R, 221G, and 221B for the respective sub-pixels 2R, 2G, and 2B and(ii) the shadow mask 81 with the alignment markers 84R, 84G, and 84B forthe respective sub-pixels 2R, 2G, and 2B.

The present embodiment is, however, not limited to such an arrangement.It is alternatively possible to use a single alignment marker in placeof (i) the alignment markers 221R, 221G, and 221B or (ii) the alignmentmarkers 84R, 84G, and 84B.

The present embodiment may, for example, be arranged such that theshadow mask 81 includes a single pattern as an alignment marker 84 andthat vapor deposition is carried out while the single alignment marker84 is aligned sequentially with the alignment markers 221R, 221G, and221B of the TFT substrate 10 for individual formation of the holetransfer layers 28R, 28G, and 28B. The present embodiment mayalternatively be arranged such that the shadow mask 81 includes, asalignment markers 84, the alignment markers 84R, 84G, and 84B for therespective sub-pixels 2R, 2G, and 2B and that the TFT substrate 10includes a single alignment marker 221 for all the sub-pixels 2R, 2G,and 2B.

In the case where the present embodiment includes, for the respectivecolors, vapor deposition sources 85 and shadow masks 81 arranged in thesubstrate scanning direction in parallel to each other so that the holetransfer layers 28R, 28G, and 28B are formed individually for therespective colors (that is, for the respective sub-pixels 2R, 2G, and2B), the TFT substrate 10 and the shadow mask 81 simply need to includea single alignment marker 221 and a single alignment market 84,respectively, for in-line vapor deposition.

Embodiment 3

The present embodiment is described below mainly with reference to FIGS.17 and 18.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 and 2 above. Constituent elements of thepresent embodiment that are identical in function to their respectiveequivalents described in Embodiments 1 and 2 are each assigned the samereference numeral, and are not described here.

FIG. 17 is a bird's eye view of main constituent elements inside thevacuum chamber 60 of the vapor deposition device 50 of the presentembodiment. FIG. 18 is a cross-sectional view schematically illustratinga configuration of a main part provided inside the vacuum chamber 60(see FIG. 3) of the vapor deposition device 50 of the presentembodiment.

The vapor deposition device 50 of the present embodiment includesconstituent elements that are similar to those of the vapor depositiondevice 50 described in Embodiment 1. FIGS. 17 and 18 each omit someconstituent elements.

The vapor deposition device 50 of the present embodiment differs fromthe vapor deposition device 50 of Embodiment 1, as illustrated in FIGS.17 and 18, in that the mask unit 80 and the substrate holding member 71for holding the film formation substrate 200 are positioned inverselyalong the vertical direction.

The present embodiment is arranged such that (i) the substrate holdingmember 71 includes, for example, a so-called XY stage, that is, asubstrate stage provided movably along an x direction and a y direction,and that (ii) the film formation substrate 200 is held by the substratestage. The substrate stage may have the function as an electrostaticchuck. The present embodiment may alternatively be arranged such that(i) the substrate holding member 71 includes, instead of the substratestage, a roller as described in Embodiment 1 above, and that (ii) thefilm formation substrate 200 is held and moved by the roller.

The mask unit 80 of the present embodiment is, as well as that of theembodiments above, arranged such that the shadow mask 81 and the vapordeposition source 85 are held integrally with each other by a maskholding member (not illustrated in FIG. 17 or 18) (that is, the maskholding member 87; see FIG. 3), such as a holder, which is, for example,fixed to the vacuum chamber 60 and in which the shadow mask 81 and thevapor deposition source 85 are, for example, placed to be contained andfixed. The mask holding member may be fixed to a top wall or peripheralwall of the vacuum chamber 60, or to a bottom wall of vacuum chamber 60by a prop (strut; not shown) extending from the bottom wall.

In the case where the mask unit 80 is fixed and the film formationsubstrate 200 is moved relative to the mask unit 80, the presentembodiment may be arranged, for example, such that (i) the vapordeposition source 85 is directly fixed to the top wall of the vacuumchamber 60 (see FIG. 3) and that (ii) the shadow mask 81 is fixed to oneof the inner walls of the vacuum chamber 60 by the mask holding membernot illustrated. The present embodiment may alternatively be arrangedsuch that (i) the top wall of the vacuum chamber 60 is provided with topwindows in correspondence with the emission holes 86 of the vapordeposition source 85 and that (ii) the body of the vapor depositionsource 85 is positioned (placed) outside the vacuum chamber 60.Regardless of the arrangement, the mask unit 80 simply needs to bearranged such that the shadow mask 81 and the vapor deposition source 85are fixed in position relative to each other.

The present embodiment is, as illustrated in FIGS. 17 and 18, arrangedsuch that the vapor deposition source 85 and the shadow mark 81 areprovided above the film formation substrate 200. This causes vapordeposition particles to be emitted downward from the emission holes 86of the vapor deposition source 85.

The vapor deposition source 85 includes a mechanism for emitting vapordeposition particles downward. Vapor deposition particles emitted by thevapor deposition source 85 pass through the openings 82 of the shadowmask 81 to be deposited in the vapor deposition region 210 (see FIG. 1)of the film formation substrate 200 which is passing a position belowthe shadow mask 81.

More specifically, while the vapor deposition method described inEmbodiment 1 above carries out vapor deposition by depo-up, the presentembodiment is arranged such that, as described above, (i) the vapordeposition source 85 is provided above the film formation substrate 200and that, as described above (ii) vapor deposition particles passthrough the openings 82 of the shadow mask 81 to be deposited onto thefilm formation substrate 200 downward from above (that is, downdeposition; hereinafter referred to as “depo-down”).

Embodiment 1 used, as the substrate holding member 71, an electrostaticchuck to adhere the film formation substrate 200 thereto in order to (i)prevent self-weight bending of the film formation substrate 200 and (ii)maintain a fixed distance between the film formation substrate 200 andthe shadow mask 81. In contrast, the present embodiment, which carriesout vapor deposition by depo-down as described above, simply needs to,as described above, use a substrate stage or a roller to hold the filmformation substrate 200 in a manner sufficient to prevent self-weightbending thereof.

The present embodiment can thus simplify the structure of the vapordeposition device 50 and eliminate the risk of a large-sized filmformation substrate 200 dropping due do adhesion defect. The presentembodiment can consequently increase stability in operation of the vapordeposition device 50 and improve yield.

Embodiment 4

The present embodiment is described below mainly with reference to (a)through (c) of FIG. 19.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 3 above. Constituent elements ofthe present embodiment that are identical in function to theirrespective equivalents described in Embodiments 1 through 3 are eachassigned the same reference numeral, an are not described here.

(a) of FIG. 19 is a plan view illustrating a positional relationship,observed during vapor deposition, between the mask unit 80 and the filmformation substrate 200 inside the vacuum chamber 60 of the vapordeposition device 50 of the present invention. (b) and (c) of FIG. 19are each a diagram illustrating an example substrate scanning directionwith an arrow. (a) of FIG. 19 omits some constituent elements.

The present embodiment differs from Embodiment 1, as illustrated in (a)of FIG. 19, in that the film formation substrate 200 is scanned in thelong-axis direction of the openings 82 of the shadow mask 81 in the maskunit 80.

More specifically, the present embodiment is arranged such that in S12indicated in FIG. 10, the alignment is carried out with use of thealignment markers 84 of the shadow mask 81 in such a manner that thesubstrate scanning direction is identical to the long-axis direction ofthe openings 82 of the shadow mask 81.

The present embodiment is thus arranged, as illustrated in (a) of FIG.19, to include alignment marker sections 220 provided (i) outside thevapor deposition region 210 of the film formation substrate 200 and (ii)along the direction perpendicular to the substrate scanning direction,that is, along each long side 210 a of the vapor deposition region 210.

The present embodiment is, as well as Embodiment 1 above, arranged suchthat the openings 82 are each in the shape of a stripe extending alongeach long side 81 a, that is, along the long-axis direction of theshadow mask 81.

The present embodiment is thus arranged such that in S13 indicated inFIG. 10, the film formation substrate 200 is held by the substrateholding member 71 in a state in which the film formation substrate 200is rotated 90° as compared to that of Embodiment 1 above, that is, insuch a manner that the long-axis direction of the film formationsubstrate 200 is identical to the short-axis direction of the shadowmask 81.

The present embodiment is arranged such that, as illustrated in, forexample, (a) through (c) of FIG. 19, the film formation substrate 200 isfirst moved relative to the shadow mask 81 along a first side (shortside 210 b) of the vapor deposition region 210 of the film formationsubstrate 200, and is then moved relative to the shadow mask 81 along asecond side (long side 210 a) of the vapor deposition region 210 whichsecond side is orthogonal to the first side.

The present embodiment is arranged such that after S13 indicated in FIG.10, the film formation substrate 200 is moved, as a vapor depositionstep, relative to the shadow mask 81 alternately along a first side ofthe vapor deposition region 210 of the film formation substrate 200 andalong a second side of the vapor deposition region 210 which second sideis orthogonal to the first side (zigzag movement; zigzag scan).

The present embodiment carries out a sufficient alignment before asubstrate scan and carries out no alignment during a substrate scan.

The film formation substrate 200 includes, as illustrated in (a) of FIG.19, two alignment marker sections 220 that are so aligned along thesubstrate scanning direction as to sandwich the vapor deposition region210 of the film formation substrate 200.

The description below, for convenience of explanation, uses (i) the term“first alignment marker section 220” to refer to one of the twoalignment marker sections 220 which is located upstream (that is, on thestart-end side) in the substrate scanning direction at the start of ascan illustrated with a solid line in (a) of FIG. 19 and (ii) the term“second alignment marker section 220” to refer to the other alignmentmarker section 220.

In the present embodiment, the film formation substrate 200 and theshadow mask 81 are first so aligned with each other, as indicated by asolid line in FIG. 19, that the vapor deposition region 210 of the filmformation substrate 200 (i) lies outside the vapor deposition region ofthe shadow mask 81 and thus (ii) overlaps none of the openings 82 of theshadow mask 81.

Specifically, the alignment is first carried out by using (i) as astart-end marker, an alignment marker 221 in the first alignment markersection 220 of the film formation substrate 200 and (ii) an alignmentmarker 84 in an alignment marker section 83 of the shadow mask 81 whichalignment marker section 83 (hereinafter referred to as “first alignmentmarker section 83” for convenience of explanation) faces the firstalignment marker section 220.

The present embodiment next scans the film formation substrate 200 alongthe long-axis direction of the shadow mask 81 (that is, the short-axisdirection of the film formation substrate 200) as indicated by a chaindouble-dashed line and an arrow in (a) of FIG. 19.

The above operation forms the above-described stripe-shaped vapordeposition film 211, through the openings 82 of the shadow mask 81, onthe vapor deposition region 210 of the film formation substrate 200 inthe direction as rotated 90° from that of Embodiment 1.

Then, the vapor deposition region 210 of the film formation substrate200 finishes passing the openings 82 of the shadow mask 81, so that thefilm formation substrate 200 is scanned up to a position outside thevapor deposition region 210 as illustrated at the bottom portion of (a)of FIG. 19. The present embodiment next carries out another alignmentwith use of alignment markers 221 and 84 in respective second alignmentmarker sections 220 and 83 that are opposite respectively from the abovefirst alignment marker sections 220 and 83.

The present embodiment then, as indicated by an arrow and a chaindouble-dashed line in (a) and (b) of FIG. 19, shifts the film formationsubstrate 200 along the short-axis direction of the shadow mask 81 byusing (i) as a rear-end marker, the alignment marker 221 in the secondalignment marker section 220 and (ii) the alignment marker 84 in thesecond alignment marker section 83. The present embodiment next carriesout an alignment by using (i) as a start-end marker, the alignmentmarker 221 in the second alignment marker section 220, which is used assuch when the film formation substrate 200 is shifted along theshort-axis direction of the shadow mask 81 as described above, and (ii)the alignment marker 84 in the second alignment marker section 83.

The present embodiment then, as illustrated in (a) and (b) of FIG. 19,scans the film formation substrate 200 along the opposite direction(that is, along the direction opposite to the substrate scanningdirection used for the first time) to further scan the film formationsubstrate 200 with respect to a region for which no vapor deposition hasbeen carried out.

In the case where vapor deposition is carried out a plurality of timeswith respect to an identical region by a reciprocating scan, vapordeposition is repeated, as indicated by an arrow in (c) of FIG. 19, withrespect to such an identical region along the long-axis direction of theshadow mask 81 with the substrate scanning direction reversed each time.Such a reciprocating scan forms, in a partial region of the vapordeposition region 210, a vapor deposition film 211 having a desired filmthickness (completion of an n-th scan). The present embodiment then (i)shifts the film formation substrate 200 along the short-axis directionof the shadow mask 81 as described above, and (ii) for an (n+1)th time,scans the film formation substrate 200, as in the n-th scan, withrespect to a region for which no vapor deposition has been carried out.Repeating the above operation forms a stripe-shaped vapor depositionfilm 211 throughout the entire vapor deposition region 210 of the filmformation substrate 200.

The present embodiment thus makes it possible to form, throughout theentire vapor deposition region 210 of the film formation substrate 200,a vapor deposition film 211 with a desired film thickness by using ashadow mask 81 that is smaller in width (that is, the width d2 of eachshort side 81 b) along the direction perpendicular to the substratescanning direction than the width (in the present embodiment, the widthd4 of each long side 210 a extending in parallel to each short side 81 bof the shadow mask 81) of the vapor deposition region 210 of the filmformation substrate 200 along the direction perpendicular to thesubstrate scanning direction.

The present embodiment consequently makes it possible to (i) downsize ashadow mask 81 further and also (ii) use a shadow mask 81 of which eachside is smaller in width than any side of the vapor deposition region210 of the film formation substrate 200.

The present embodiment merely requires the film formation substrate 200to stop momentarily when the substrate scanning direction is reversed(switched), and carries out vapor deposition even while the filmformation substrate 200 is in motion. The present embodiment thus doesnot require a long tact times.

Embodiment 5

The present embodiment is described below mainly with reference to FIG.20.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 4 above. Constituent elements atthe present embodiment that are identical in function to theirrespective equivalents described in Embodiments 1 through 4 are eachassigned the same reference numeral, and are not described here.

FIG. 20 is a plan view illustrating a positional relationship, observedduring vapor deposition, between the mask unit 80 and the film formationsubstrate 200 inside the vacuum chamber 60 of the vapor depositiondevice 50 of the present embodiment. FIG. 20 omits some constituentelements.

The vapor deposition device 50 of the present embodiment differs fromthat of Embodiment 4 above in that, as illustrated in FIG. 20, (i) itincludes a plurality of mask units 80 in a single vacuum chamber 60 and(ii) the mask units 80 include respective rectangular shadow masks 81(each in the shape of a belt) arranged along the short-axis direction ofthe shadow masks 81.

Specifically, the vacuum chamber 60 contains three mask units as themask units 80: (i) a mask unit (hereinafter referred to as “mask unit80R”) for forming the luminous layer 23R, (ii) a mask unit (hereinafterreferred to as “mask unit 80G”) for forming the luminous layer 23G, and(iii) a mask unit (hereinafter referred to as “mask unit 80B”) forforming the luminous layer 23B.

The mask unit 80R includes (i) as a shadow mask 81, a shadow mask(hereinafter referred to as “shadow mask 81R”) for forming the luminouslayer 23R and (ii) as a vapor deposition source 85, a vapor depositionsource (hereinafter referred to as “vapor deposition source 85R”) fixedin position relative to the shadow mask 81R.

Similarly the mask unit 80G includes (i) as a shadow mask 81, a shadowmask (hereinafter referred to as “shadow mask 81G”) for forming theluminous layer 23G and (ii) as a vapor deposition source 85, a vapordeposition source (hereinafter referred to as “vapor deposition source85G”) fixed in position relative to the shadow mask 81G.

The mask unit 80B includes (i) as a shadow mask 81, a shadow mask(hereinafter referred to as “shadow mask 81B”) for forming the luminouslayer 23B and (ii) as a vapor deposition source 85, a vapor depositionsource (hereinafter referred to as “vapor deposition source 85B”) fixedin position relative to the shadow mask 81B.

The respective shadow masks 81R, 81G, and 81B of the mask units 80R,80G, and 80B are so arranged as to have their long sides 81 a juxtaposedto one another.

The present embodiment is, as well as Embodiment 4 above, arranged suchthat the alignment in S12 is carried out in such a manner that thesubstrate scanning direction is identical to the long-axis direction ofthe openings 82 of each of the shadow masks 81R, 81G, and 81B.

The present embodiment is further arranged such that (i) in S13, thefilm formation substrate 200 is held by the substrate holding member 71,as in Embodiment 4 above, in a state in which the film formationsubstrate 200 is rotated 90° as compared to that of Embodiment 1 above,that is, in such a manner that the long-axis direction of the filmformation substrate 200 is identical to the short-axis direction of eachof the shadow masks 81R, 81G, and 81B, and (ii) after S13, a zigzag scaninvolving a zigzag movement is carried out as a vapor deposition step asin Embodiment 4 above.

FIG. 20 illustrates a state in which the film formation substrate 200lies across the shadow masks 81G and 81B.

In the present embodiment, in the case where the scan rate and thereciprocating number for each color are each adjusted so as to be equalamong the colors, it is possible to deposit, onto an identical filmformation substrate 200 located across a plurality of shadow masks 81, aplurality of organic layers (for example, at least two of the luminouslayers 23R, 23G, and 23B) simultaneously as illustrated in FIG. 20.

With any conventional vapor deposition device and vapor depositionmethod, in a case where, for example, a discriminative applicationformation is carried out for a luminous layer of each color, it has beennecessary to either (i) prepare a vacuum chamber for each luminous layeror (ii) switch (replace) shadow masks and vapor deposition sources in anidentical vacuum chamber to form individual luminous layers separatelyin a time-series sense (that is, not simultaneously).

In contrast, the present embodiment, which can carry out vapordeposition of a plurality of organic layers simultaneously as describedabove, can form all patterns of the luminous layers 23R, 23G, and 23Bsimply in a single vacuum chamber 60 by containing the shadow masks 81R,81G, and 81B for the respective colors in such a single vacuum chamber60 as described above.

Embodiment 6

The present embodiment is described below mainly with reference to FIG.21.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 5 above. Constituent elements ofthe present embodiment that are identical in function to theirrespective equivalents described in Embodiments 1 through 5 are eachassigned the same reference numeral, and are not described here.

FIG. 21 is a plan view illustrating a relation between a substratescanning direction and the long-axis direction of the openings 82 of theshadow mask 81 in the mask unit 80 of the present embodiment.

The present embodiment is, as well as Embodiment 4 above, arranged suchthat in S13, the film formation substrate 200 is held by the substrateholding member 71 in a state in which the film formation substrate 200is rotated 90° as compared to that of Embodiment 1 above, that is, insuch a manner that the long-axis direction of the film formationsubstrate 200 is identical to the short-axis direction of each of theshadow masks 81R, 81G, and 81B.

While Embodiment 4 above carries out a zigzag scan, the presentembodiment scans the film formation substrate 200, as in Embodiment 1,along the short-axis direction of the shadow mask 81 as illustrated inFIG. 20.

The present embodiment thus, instead of continuously moving the filmformation substrate 200, (i) forms, in a partial region of the vapordeposition region 210 of the film formation substrate 200, a vapordeposition film 211 in the shape of the openings 82 of the shadow mask81 and then (ii) moves (shifts) the film formation substrate 200relative to the shadow mask 81 along the short-axis direction of theshadow mask 81 by a predetermined width, for example, a width equal tothe product of (i) the pitch p of the openings 82 and (ii) the number ofthe openings 82, so that the openings 82 coincide with a region forwhich no vapor deposition has been carried out. The present embodimentnext (i) holds the film formation substrate 200 to cause it to bestationary in the above state and then (ii) forms, in such a region forwhich no vapor deposition has been carried out, a vapor deposition film211 in the shape of the openings 82 of the shadow mask 81. In thepresent embodiment, the expression “cause . . . to be stationary” refersto stopping a relative movement of the shadow mask 81 and the filmformation substrate 200 along the scanning direction, that is, stoppingthe scan.

The present embodiment thus uses, as the vapor deposition source 85, aplanar vapor deposition source including emission holes 86 arrangedtwo-dimensionally. In the present embodiment, the emission holes 86 ofthe vapor deposition source 85 are provided to simultaneously correspondto all the openings 82 of the shadow mask 81.

More specifically, the present embodiment is arranged such that (i) eachopening 82 corresponds to a plurality of emission holes 86 so that vapordeposition particles can be deposited simultaneously through all theopenings 82 of the shadow mask 81 and that (ii) the emission holes 86are arranged along the long-axis direction of the openings 82.

The present embodiment, as described above, operates in such an order asfollows: (i) carrying out vapor deposition, (ii) slightly shifting thefilm formation substrate and then holding it to cause it to bestationary, (iii) carrying out vapor deposition, (iv) slightly shiftingthe film formation substrate and then holding it to cause it to bestationary, (v) carrying out vapor deposition . . . . The presentembodiment, as such, alternates (i) vapor deposition (film formation)carried out in a stationary state, that is, in a state in which the scanis stopped, and (ii) a relative movement. The present embodiment canthus form, throughout the entire vapor deposition region 210 of the filmformation substrate 200, a vapor deposition film 211 in the shape of theopenings 82 of the shadow mask 81.

The present embodiment, as described above, intermittently carries out ascan involving a relative movement of the shadow mask 81 and the filmformation substrate 200.

Even in such a case where a scan involving a relative movement of theshadow mask 81 and the film formation substrate 200 is carried outintermittently, it is preferable to continuously carry out (i) analignment between the shadow mask 81 and the film formation substrate200 relative to each other, that is, an alignment adjustment, and (ii)an adjustment (gap control) of the substrate-mask gap. The vapordeposition itself thus does not need to be stopped.

In other words, the present embodiment preferably continuously carriesout an alignment adjustment and an adjustment of the substrate-mask gapeven when a scan of the shadow mask 81 and the film formation substrate200 is stopped.

The present embodiment, which continuously carries out an alignment anda gap control as described above, eliminates the need to, even in a casewhere (i) a film formation in a stationary state is stopped by, forexample, closing the shutter 89 and (ii) a subsequent scan step (forexample, a substrate scan step) is started, start an alignment and a gapcontrol again from the beginning in a subsequent stationary state. Thepresent embodiment can thus reduce the tact time.

Embodiment 7

The present embodiment is described below mainly with reference to FIGS.24 and 25.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 though 6 above. Constituent elements of thepresent embodiment that are identical in function to their respectiveequivalents described in Embodiments 1 through 6 are each assigned thesame reference numeral, and are not described here.

FIG. 24 is a plan view of the film formation substrate 200 and the maskunit 80 in the vacuum chamber 60 of the vapor deposition device 50 ofthe present embodiment, as viewed from a back surface side of the filmformation substrate 200. FIG. 25 is a cross-sectional view schematicallyillustrating a configuration of a main part provided inside the vacuumchamber 60 of the vapor deposition device 50 of the present embodiment.FIG. 25 illustrates a cross section of the vapor deposition device 50which cross section is taken along line C-C in FIG. 24. As in theembodiments above, FIGS. 24 and 25 illustrating the present embodimentomit some constituent elements, such as openings of the shadow mask 81and a vapor deposition film for convenience of illustration.

The present embodiment mainly describes an arrangement of the mask unit80.

The mask unit 80 of the present embodiment, as illustrated in FIGS. 24and 25, includes a mask tension mechanism 88 that includes mask clamps130 (clamps; clamp means) for fixing (attaching) the shadow mask 81 to adevice (that is, the vapor deposition device 50) in a state in which theshadow mask 81 is under tension. The mask clamps 130 are provided atopposite end sections of the shadow mask 81 which end sections (that is,the respective short sides 81 b and 81 b) are juxtaposed along thelong-side direction of the shadow mask 81.

The mask unit 80 further includes, as the mask holding member 87 forsupporting the shadow mask 81, a mask fixing stand that includes masksupporting sections 141 and 141 (mask supporting bars; mask holdingstands) at respective portions abutting the shadow mask 81. In otherwords, the mask supporting sections 141 and 141 of the presentembodiment each function as a member abutting the shadow mask 81.

The mask holding member 87 of the present embodiment, as well as theembodiments above, may be fixed to a top wall or peripheral wall of thevacuum chamber 60, or to a bottom wall of the vacuum chamber 60 by aprop (strut; not shown) extending from the bottom wall. Thus, the masksupporting sections 141 and 141 may each be fixed to the top wall orperipheral wall of the vacuum chamber 60, or to the bottom wall of thevacuum chamber 60 by a prop (strut; not shown) extending from the bottomwall. In other words, the mask supporting sections 141 and 141 maythemselves be each a supporting member (mask holding means) forsupporting the shadow mask 81.

In the case where the mask fixing stand (mask holding member 87) is aholder for holding and fixing the shadow mask 81 and the vapordeposition source 85, the mask supporting sections 141 and 141 may eachbe a part of a holder for holding and fixing the vapor deposition source85. In other words, the mask supporting sections 141 and 141 may each befitted to a holder for holding and fixing the vapor depositions source85.

The mask clamps 130 and 130 may thus each serve to (i) fix the shadowmask 81 to, for example, an inner wall of the vacuum chamber 60 in astate in which the shadow mask 81 is under tension or (ii) fix theshadow mask 81 to the mask holding member 97 such as a holder.

The mask claims 130 and 130 are simply required to serve to fix theshadow mask 81 to a device in a state in which the shadow mask 81 isunder tension, and are thus not particularly limited in terms ofmaterial or shape.

The mask clamps 130 and 130 thus simply need to be arranged such that(i) the shadow mask 81 to which the mask clamps 130 and 130 are fittedhas, in a state in which the shadow mask 81 is under no tension, anoverall length that is smaller than the distance (length) of a straightline that extends through the mask supporting sections 141 and 141 andthat connects sections provided inside the device to fix the shadow mask81 and (ii) applying tension to the mask clamps 130 and 130 lays theshadow mask 81, in a tensioned state, across the sections providedinside the device to fix the shadow mask 81. The above expression “thatextends through the mask supporting sections 141 and 141 and thatconnects sections provided inside the device to fix the shadow mask 81”describes the space between positions at which the shadow mask 81 isfixed in the vapor deposition device 50.

The mask tension mechanism 88 is, as illustrated in FIG. 25, preferablyarranged to sue the mask clamps 130 and 130 to apply tension to theshadow mask 81 in directions that are oblique with respect to the shadowmask 81.

With reference to FIGS. 24 and 25, the mask supporting sections 141 and141 are each provided, for example, (i) below the shadow mask 81 (thatis, on a side of the shadow mask 81 which side is opposite to a surfaceof the shadow mask 81 which surface faces the film formation substrate200 (ii) in a region (specifically, in the vicinity of each end sectionof the shadow mask 81 which end section is present along the long-sidedirection of the shadow mask 81) between the corresponding mask clamp130 and a vapor deposition region, that is, a region in which openingsare provided (that is, the openings 82).

In the example illustrated in FIGS. 24 and 25, the above arrangementallows the mask clamps 130 and 130 to apply tension to the shadow mask81 in obliquely downward directions with use of each of the masksupporting sections 141 and 141 as a fulcrum.

In other words, the mask supporting sections 141 and 141 serve to, whenthe shadow mask 81 is placed thereon, (i) hold the shadow mask 81 in astate in which the shadow mask 81 and the film formation substrate 200are parallel to each other and (ii) each function as a fulcrum whentension is applied to the shadow mask 81.

As described above, the present embodiment thus (ii) includes, as themask tension mechanism 88, a mask fixing stand including the masksupporting sections 141 and 141 and (ii) applies tension to the shadowmask 81 in obliquely downward direction, to prevent waviness in theshadow mask 81. This arrangement makes it possible to align the filmformation substrate 200 and the shadow mask 81 with each otheraccurately. The above arrangement, which reduces waviness in the shadowmask 81 for the vapor deposition region 210 as well, can reducemispositioning in vapor deposition onto the film formation substrate200.

As described above, in the present embodiment as well as Embodiment 1above, aligning the film formation substrate 200 and the shadow mask 81with each other can adjust the position of vapor deposition onto thefilm formation substrate 200.

Further, in the present embodiment as well, the alignment between thefilm formation substrate 200 and the shadow mask 81 may be carried outby (i) a method of placing the shadow mask 81 at a home position set forthe vapor deposition device 50 and aligning the film formation substrate200 with the shadow mask 81 serving as a basis (mask-based) or (ii) amethod of aligning the shadow mask 81 with the film formation substrate200 serving as a basis method (substrate-based).

The present embodiment, as described above, uses the mask clamps 130 toadjust the position and tension of the shadow mask 81.

Thus, in the present embodiment, moving the mask clamps 130 torespective home positions (that is, default position set for the device)can adjust (place) the shadow mask 81 itself to its home position.

The present embodiment, as well as the embodiments above, can carry outan alignment between the film formation substrate 200 and the shadowmask 81, as in Embodiment 1 above, with use of the alignment markers 84and 221. In the case of carrying out, as a pattern formation for thevapor deposition film 221, a pattern formation for organic EL layerssuch as the luminous layers 23R, 23G, and 23B as described above, thepresent embodiment can carry out discriminative application vapordeposition of such organic EL layers accurately.

The present embodiment, as well as the embodiments above, preferablyscans an identical substrate once or a plurality of times until a formedfilm has a target film thickness.

In the present embodiment as well as the embodiments above, thesubstrate position is desirably corrected, as described in Embodiment 1above, with use of the alignment markers 84 and 221 before the filmformation substrate 200 enters a region (vapor deposition area) in whichvapor deposition particles from the vapor deposition source 85 aredeposited.

Thus, in the present embodiment as well as the embodiments above, thealignment markers 221 (that is, the alignment marker sections 220) arepreferably provided, as illustrated in FIG. 24, such that (i) analignment marker 221 is located away, upstream in the substrate scanningdirection, from the vapor deposition region 210, and that (ii) in a casewhere reciprocating vapor deposition is carried out, an alignment marker221 is located away, downstream in the substrate scanning direction,from the vapor deposition region 210.

In the case where it is impossible to locate the alignment markers 221(that is, the alignment marker sections 220) away in the scanningdirection from the vapor deposition region 210 for the purpose ofsecuring the vapor deposition region 210, it is possible to, asdescribed above, locate the alignment markers 84 of the shadow mask 81outside relative to the openings 82 of the shadow mask 81 by decreasingthe opening width of the openings 82 of the shadow mask 81 along thescanning direction. In other words, it is also possible to, as describedabove, adjust the alignment position on the shadow mask 81 side byrelatively positioning an alignment marker of the shadow mask 81 outsidethe vapor deposition area for the vapor deposition source 85.

In the case where the alignment markers 84 of the shadow mask 81 eachhave a width along the substrate scanning direction which width issmaller than the width of the shadow mask 81 along the substratescanning direction as illustrated in (b) and (c) of FIG. 5, an alignmentmarker 84 is, as illustrated in FIG. 24, preferably located, for thesame reason as above, at an end of the shadow mask 81 which end islocated downstream in the direction in which the substrate makes itsentry (that is, an end of the shadow mask 81 which end is locatedupstream in the substrate scanning direction). In the case wherereciprocating vapor deposition is carried out, alignment markers 84 arepreferably located at both ends along the substrate scanning direction(that is, at the four corners).

In the present embodiment as well as the embodiments above, the masktension mechanism 88 for applying tension to the shadow mask 81 isprovided, as described above, not as a jig (mask jig; fitting) for thefilm formation substrate 200, but as a part (mechanism) of the vapordeposition device 50.

Thus, the present embodiment, as well as the embodiments above, (i)secures a fixed gap g1 between the film formation substrate 200 and theshadow mask 81 as described above to use a vapor deposition system thatdoes not allow the film formation substrate 200 and the shadow mask 81to be closely attached to each other, and (ii) includes the mask tensionmechanism 88 in the vapor deposition device 50. The present embodimentcan thus reduce bending and thermal expansion of the shadow mask 81.Further, the present invention can adjust alignment accuracy for theshadow mask 81 by tension in accordance with a situation occurringduring vapor deposition (for example, thermal expansion of the shadowmask 81 and/or finishing accuracy of the film formation substrate 200.

In the present embodiment, as well as the embodiments above, the masktension mechanism 88 desirably has a set minimum tension (MIN) in orderto prevent the shadow mask 81 from being bent by tension appliedthereto.

The present embodiment described an example case in which, as describedabove, the mask holding member 87 (mask fixing stand) includes, asabutting members abutting the shadow mask 81, mask supporting sections141 and 141 each in the vicinity of an end section of the shadow mask 81which end section is present along the long-side direction of the shadowmask 81. The present embodiment is, however, not limited to such anarrangement. The mask holding member 87 may alternatively include anabutting member having the shape of a frame surrounding the openings 82of the shadow mask 81. Even in such a case, the abutting member can notonly hold the shadow mask 81 horizontally, but also function as afulcrum when tension is applied to the shadow mask 81.

The present embodiment describes an example case in which, as describedabove, the mask champs 130 and 130, as illustrated in FIGS. 25 and 26,applies tension to the shadow mask 81 in obliquely downward directionsas an example of applying tension to the shadow mask 81 in so obliquedirection with use of each of the mask supporting sections 141 and 141as a fulcrum.

The present embodiment is, however, not limited to such an arrangement.The present embodiment may alternatively be arranged such that abuttingmembers (for example, the mask supporting sections 141 and 141) abuttingthe shadow mask 81 are provided at respective positions corresponding toan upper portion of each of FIGS. 25 and 26, that is, on a side of theshadow mask 81 which side faces the film formation substrate 200, sothat tension is applied in obliquely upward directions.

Tension can be easily applied to the shadow mask 81 by, as describedabove, applying tension to the shadow mask 81 in oblique directions byusing, as fulcrums, abutting members, such as the mask supportingsections 141 and 141 that are themselves fixed and thus do not move,each of which abutting members abuts either a top surface or lowersurface of the shadow mask 81.

In the present embodiment, (i) the mask unit 80 includes abuttingmembers such as the mask supporting sections 141 and 141, and (ii) themask tension mechanism 88 has a mechanism for applying tension to theshadow mask 81 in oblique directions by using, as fulcrums, the abuttingmembers, such as the mask supporting sections 141 and 141, which areincluded in the supporting member such as the above mask fixing stand.The present embodiment can thus correct parallelism between (i) the masksupporting sections 141 and 141 and (ii) the film formation substrate200 in order to correct parallelism between the shadow mask 81 and thefilm formation substrate 200. The abutting members such as the masksupporting sections 141 and 141 are more specifically stated as asupporting member, such as a mask fixing-stand, which (i) is fixed andthus does not move and which includes the mask supporting sections 141and 141. The above correction of parallelism can be carried out moreeasily and more accurately than precise correction of parallelism of themask tension mechanism 88 itself, which moves in the back-and-forthdirection and the left-and-right direction.

In other words, it is more accurate and easier to (i) correctparallelism between the shadow mask 81 and the film formation substrate200 by correcting parallelism between the abutting members and the filmformation substrate 200 than to (ii) precisely correct parallelismbetween the shadow mask 81 and the film formation substrate 200 with useof the mask tension mechanism 88, which itself moves in theback-and-forth direction and the left-and-right direction relative tothe shadow mask 81.

Thus, in the case where the abutting members abutting either the topsurface or lower surface of the shadow mask 81 are each used as afulcrum as described above, parallelism between the shadow mask 81 andthe film formation substrate 200 can be easily and accurately corrected.

Further, since the abutting members such as the mask supporting sections141 and 141 (more specifically, the correction of parallelism betweenthe abutting members and the film formation substrate 200) governs thecorrection of parallelism between the shadow mask 81 and the filmformation substrate 200, it is unnecessary to, when the shadow mask 81is replaced, precisely adjust the correction of parallelism between theshadow mask 81 and the film formation substrate 200. This arrangementfacilitates replacement of the shadow mask 81.

The correction of parallelism between the shadow mask 81 and the filmformation substrate 200 refers to correction of parallelism between (i)a mask surface of the shadow mask 81 and (ii) a substrate surface of thefilm formation substrate 200 (that is, adjusting the gap g1 between theshadow mask 81 and the film formation substrate 200 so that the gap g1is uniform).

Embodiment 8

The present embodiment is described below mainly with reference to FIGS.26 through 30.

The present embodiment deals with how the present embodiment isdifferent from Embodiments 1 through 7 (in particular, Embodiments 1 and7) above. Constituent elements of the present embodiment that areidentical in function to their respective equivalents described inEmbodiments 1 through 7 are each assigned the same reference numeral,and are not described here.

FIG. 16 is a plan view of the film formation substrate 200 and the maskunit 80 in the vacuum chamber 60 of the vapor deposition device 50 ofthe present embodiment, as viewed from a back surface side of the filmformation substrate 200. FIG. 27 is a cross-sectional view schematicallyillustrating a configuration of a main part provided inside the vacuumchamber 60 of the vapor deposition device 50 of the present embodiment.FIG. 27 illustrates a cross section of the vapor deposition device 50which cross section is taken along line D-D in FIG. 26. As in theembodiments above, FIGS. 26 and 27 illustrating the present embodimentomit some constituent elements, such as openings of the shadow mask 81and a vapor deposition film, for convenience of illustration. FIG. 29 isa block diagram partially illustrating a configuration of the vapordeposition device 50 of the present embodiment.

The vapor deposition device 50 of the present embodiments, asillustrated in FIG. 27, includes a mask unit 80 that includes, insidethe vapor deposition device 50, absolute alignment reference markers120, each as an alignment marker for an absolute alignment, thatcorrespond to an absolute position (that is, an absolute position for analignment) of the shadow mask 81 so that the shadow mask 81 can beplaced at the absolute position. Further, the shadow mask 81 of the maskunit 80 includes absolute-alignment markers 110 as illustrated in FIGS.27 and 28. In these respects, the mask unit 80 in the vapor depositiondevice 50 of the present embodiment differs from that in the vapordeposition device 50 of Embodiment 7 above.

The above absolute position is determined, in advance at a designingstage, in relation to the device on the basis of either (i) therespective positions of the shadow mask 81 and the vapor depositiondevice 50 relative to each other or (ii) the respective positions of theshadow mask 81 and the vapor deposition source 85 relative to eachother, so that no portion of the shadow mask 81 is placed outside thevapor deposition region 210 of the film formation substrate 200.

FIG. 28 is a plan view illustrating an absolute alignment for the shadowmask 81. FIG. 28 is a plan view, taken from above the shadow mask 81, ofa region R defined by a dotted line in FIG. 27.

As illustrated in FIG. 28, the mask unit includes in the region R (i)absolute-alignment markers 110, namely alignment markers 111 and 112,and (ii) openings 113 each serving as a window (window section) throughwhich to see an absolute alignment reference marker 120.

The alignment markers 111 and 112 are, for example, two openings: one islarger than the other. The alignment markers 111 and 112 are providedalong the substrate scanning direction (that is, each short side 81 b ofthe shadow mask 81) in parallel to the substrate scanning direction.

One of the alignment markers 111 and 112 serves as an alignment center,while the other is used to check a direction (that is, the directionparallel to the substrate scanning direction) in which the substratescanning direction is parallel to each short side 81 b of the shadowmask 81, that is, to the direction along which the belt-shaped openings82 of the shadow mask 81 each extend.

The direction in which the shadow mask 81 is parallel to the substratescanning direction can be checked with use of the alignment markers 111and 112 by a method below.

Specifically, the method first reads center coordinates of each of thealignment markers 111 and 112 with use of an image sensor 150 (secondimage sensor; alignment observing means; see FIG. 29) including, forexample, a CCD as image sensing means (image reading means). The methodthen adjusts the position of the shadow mask 81 with use of the tensioncontrol section 163 (see FIG. 29) so that a parallel line passingthrough the centers is parallel to the substrate scanning direction.

The above arrangement allows the substrate scanning direction to beparallel to sides of the shadow mask 81 which sides (in the presentembodiment, the short sides 81 b and 81 b) need to be parallel to thesubstrate scanning direction. In particular, the above arrangementallows the substrate scanning direction to be parallel to sides of eachopening 82 extending along the above sides (that is, to sides (openingends) of each opening 82 of the shadow mask 81 which sides are parallelto the substrate scanning direction).

The absolute-alignment markers 110 (that is, the alignment markers 111and 112) may be provided at only one of the two sides of the shadow mask81 which sides are parallel to the substrate scanning direction (in thepresent embodiment, the short sides 81 b and 81 b). Theabsolute-alignment markers 110 are, however, preferably provided at bothof the two sides of the shadow mask 81. In the case where the substratescanning direction is made parallel, with use of the absolute-alignmentmarkers 110 provided at both sides of the shadow mask 81, to the sidesof the shadow mask 81 which sides need to be parallel to the substratescanning direction, the sides of the shadow mask 81 which sides need tobe parallel to the substrate scanning direction can be made accuratelyparallel to the substrate scanning direction.

The present embodiment corrected parallelism (θ adjustment) of theshadow mask 81 by using a plurality of alignment markers as theabsolute-alignment markers 110 as described above. The presentembodiment is, however, not limited to such an arrangement.

In the case where, for example, an alignment marker out of theabsolute-alignment markers 110 which alignment marker serves as analignment center is adjusted precisely so that (i) the rotation midpointof the absolute alignment reference marker 120 (that is, the midpoint(center coordinates) of the vapor deposition source 85) coincides, at anidentical point (at identical coordinates), with (ii) the midpoint(center coordinates) of the alignment marker out of theabsolute-alignment markers 110 which alignment marker serves as analignment center, the absolute-alignment markers 110 do not necessarilyneed to include a plurality of alignment markers. Parallelism adjustmentof the shadow mask 81 can be carried out even in the case where a singlealignment marker serving as an absolute-alignment marker 110 is providedat each of the two sides (in the present embodiment, the short sides 81b and 81 b) of the shadow mask 81 which sides are parallel to thesubstrate scanning direction.

The shadow mask 81 is provided with, in the vicinity of the alignmentmarkers 111 and 112, the above-mentioned opening 113 to read theabsolute alignment reference marker 120 with use of the image sensor150. The absolute alignment reference marker 120 can be seen through theopening 113.

The absolute-alignment markers 110 and the absolute alignment referencemarker 120 are aligned with each other with use of one of the alignmentmarkers 11 and 112 as described above.

Specifically, the present embodiment sets in advance the respectiverelative positions of (i) the absolute alignment reference marker 120and (ii) an alignment marker out of the alignment markers 111 and 112which alignment marker serves as an alignment center. The presentembodiment thus adjusts the position of the shadow mask 81 to achievethe set value.

In the above regard, the shadow mask is preferably provided with a largeaperture so that the absolute alignment reference marker 120 can be seeneasily.

Such a large aperture may, however, be deformed when tension is appliedto the shadow mask 81.

Thus, the present embodiment is preferably arranged such that (i) inaddition to the opening 113 serving as a window through which to see theshadow mask 81, alignment markers 111 and 112 are provided which aresmaller than the opening 113 and which are unlikely distorted and (ii)the alignment markers 111 and 112 are thus used respectively as analignment marker serving as an alignment center and an alignment markerfor checking parallelism, so that the shadow mask 81 is adjusted to itsabsolute position.

The opening 113 may be a single aperture (hole) or a mesh-patternaperture. In the case where the opening 113 serving as a window asdescribed above is not a single hole but a latticed window (mesh-patternaperture) that is open to such an extent as to allow the absolutealignment reference marker 120 to be seen, distortion of the window canbe prevented.

As described above, the present embodiment provides, as markers to eachserve as a reference for placing the shadow mask 81 at the absoluteposition, (i) the absolute-alignment markers 110 to the shadow mask 81and (ii) the absolute alignment reference marker 120 to a position inthe vapor deposition device 50 which position faces the shadow mask 81.The present embodiment further adjusts the respective positions of anabsolute-alignment marker 110 and the absolute alignment referencemarker 120 relative to each other. This operation allows the shadow mask81 to be placed at the absolute position inside the device, andconsequently allows the shadow mask 81 to be fixed in position relativeto the vapor deposition source 85.

The gap g2 between the vapor deposition source 85 and the shadow mask 81is desirably as small as possible for, for example, improvement inefficiency of use of the vapor deposition material.

Decreasing the distance between the vapor deposition source 85 and theshadow mask 81, however, increases the temperature of the shadow mask81, which in turn expands the shadow mask 81 and causes bending (slack)in the shadow mask 81.

The present embodiment thus (i) applies tension to the shadow mask 81with use of the mask tension mechanism 88 at opposite ends of the shadowmask 81 which opposite ends are juxtaposed along the direction (that is,the long-side direction of the shadow mask 81) perpendicular to thesubstrate scanning direction, and (ii) before vapor deposition onto thefilm formation substrate 200, carries out an alignment adjustment withreference to the absolute alignment reference marker 120 so that theshadow mask 81 has its absolute dimensions (designed absolute values).

The above operation allows the shadow mask 81 to be placed at theabsolute position, and consequently adjusts the position of the shadowmask 81 relative to the vapor deposition source 85.

In the present embodiment, as illustrated in FIG. 28, the alignmentmarkers 111 and 112 are circular in shape, whereas the opening 113(window section) is quadrangular in shape. The respective shapes of thealignment markers 111 and 112 and the opening 113 are, however, notlimited to the above shapes.

The respective shapes of the alignment markers 111 and 112 and theopening 113 simply need to be shapes that facilitate the alignment andcalculation along the parallel direction, and may thus each be any shapesuch as a quadrangle and a triangle.

In the present embodiment, the alignment marker 111 is an opening thatis different in size from the opening of the alignment marker 112. Thepresent embodiment is, however, not limited to such an arrangement.

Nevertheless, since the present embodiment uses one of the alignmentmarkers 111 and 112 as an alignment center as described above, thealignment markers 111 and 112 are preferably different from each otherin at least either size or shape in order to (i) make it clear which ofthe alignment markers 111 and 112 serves as an alignment center andwhich of the alignment markers 111 and 112 is used for checkingparallelism and thus (ii) prevent misrecognition when image detection iscarried out with respect to an image captured by the image sensor 150.

The present embodiment describes an example case in which (i) one of thealignment markers 111 and 112 is used as an alignment center for thealignment between the absolute-alignment markers 110 and the absolutealignment reference marker 120, and (ii) the other alignment marker isused as an alignment marker for checking parallelism. The presentembodiment is, however, not limited to such an arrangement. The presentembodiment may alternatively be arranged such that both the alignmentmarkers are used for the alignment between the absolute-alignmentmarkers 110 and the absolute alignment reference marker 120.

In the present embodiment as well as the embodiments above, the shadowmask 81 is preferably prepared to have a size smaller than designabsolute dimensions (designed values) in consideration of, for example,expansion due to temperature. Further, the shadow mask 81 is preferablyadjusted to have assumed absolute dimensions or dimensions slightlysmaller than such absolute dimensions in response to tension applied tothe shadow mask 81 during the alignment adjustment.

The step for preparing the mask unit preferably carries out an alignmentbetween the shadow mask 81 and the vapor deposition source 85 by (i)recognizing the absolute-alignment markers 110 at each end of the shadowmask 81 which end is present along the long-side direction of the shadowmask 81 and (ii) placing the shadow mask 81 in the vapor depositiondevice 50 in a state in which either no tension or preferably a smalltension is applied to the shadow mask 81. The absolute-alignment markers110 can be recognized by using, for example, a CCD serving as imagesensing means (image reading means).

With the above arrangement, even in the case where the distance betweenthe vapor deposition source 85 and the film formation substrate 200 isdecreased as described above for a higher efficiency of use of thematerial, the vapor deposition position can be finely adjusted by (i)preparing in advance a shadow mask 81 with a size smaller than designedvalues to absorb thermal expansion of the shadow mask 81 and (ii)applying tension to the shadow mask 81 with reference to the absolutealignment reference marker 120 so that the shadow mask 81 is placed atthe absolute position (corresponding to the designed absolute values).The above arrangement can further control thermal deformation of theshadow mask 81.

In the present embodiment as well as the embodiments above, the masktension mechanism 88 desirably has a set minimum tension (MIN) in orderto prevent the shadow mask 81 from being bent by tension appliedthereto.

In the present embodiment as well as the embodiments above, the masktension mechanism 88 is, as described above, provided not as a jig forthe film formation substrate 200 but to the vapor deposition device 50itself. This arrangement makes it possible to (i) adjust expansion ofthe shadow mask 81 before vapor deposition, and consequently (ii)immediately before vapor deposition, reduce, for example, self-weightbending and/or thermal bending of the shadow mask 81, thereby improvingvapor deposition accuracy.

The vapor deposition device 50 of the present embodiment, as illustratedin FIG. 29, preferably includes (i) the above-described image sensor 150as position detecting means for carrying out an alignment between theabsolute-alignment markers 110 and the absolute alignment referencemarker 120, and (ii) a control circuit 100 that includes, in addition tothe constituent elements described in Embodiment 1 above: an imagedetecting section 161; a computing section 162; and a tension controlsection 163.

The image sensor 150 functions as position detecting means for carryingout an alignment between the absolute-alignment markers 110 and theabsolute alignment reference marker 120.

The image detecting section 161 detects, from an image captured by theimage sensor 150, respective images of the absolute-alignment markers110 and the absolute alignment reference marker 120.

The computing section 162 determines, from the images detected by theimage detecting section 161, the amount of movement (that is, tensionapplied by the mask tension mechanism 88) of the absolute-alignmentmarkers 110 relative to the absolute alignment reference marker 120. Forexample, the computing section 162, for example, the computing section102 measures the amount of positional difference (that is, a shiftcomponent along the x axis direction and the y axis direction, and arotation component on the x-y plane) between the absolute-alignmentmarkers 110 and the absolute alignment reference marker 120 to determinea correction value for the position of the absolute-alignment markers110 by computation.

The tension control section 163 adjusts the tension, applied to theshadow mask 81, so that an absolute-alignment marker 110 is superimposedover the absolute alignment reference marker 120.

In other words, the present embodiment causes (i) the image detectingsection 161 to detect, from an image captured by the image sensor 150,respective images of the absolute-alignment markers 110 and the absolutealignment reference marker 120 and (ii) the computing section 162 tomeasure, from the images detected by the image detecting section 161,the amount of positional difference between the absolute-alignmentmarkers 110 and the absolute alignment reference marker 120 to determinea correction value for the position of the absolute-alignment marker 110by computation.

The correction value is outputted in the form of a correction signal tothe tension control section 163. The tension control section 163, on thebasis of the correction signal from the computing section 162, adjuststhe tension, applied to the shadow mask 81 by means of the mask clamps130 and 130, to move the absolute-alignment markers 110 relative to theabsolute alignment reference marker 120 for an alignment adjustment.

The present embodiment, as well as the embodiments above, carries outvapor deposition onto the film formation substrate 200 by, similarly to,for example, Embodiments 1 through 7 above, (i) maintaining a fixed gapg1 between the film formation substrate 200 and the shadow mask 81 and(ii) for example, scanning the film formation substrate 200 at a fixedrate to cause the film formation substrate 200 to pass the region of theshadow mask 81 in which region the openings are formed. The presentembodiment uses the alignment markers 84 and 221 to simultaneously scanthe film formation substrate and carry out an alignment between the filmformation substrate 200 and the shadow mask 81. The present embodimentfurther adjusts tension to the shadow mask 81 on the basis of (i) theposition of the shadow mask 81 relative to a reference position in thedevice (that is, the absolute position or a home position set for thedevice (and (ii) the position of the shadow mask 81 relative to thevapor deposition source 85. The present embodiment thus simultaneously(i) corrects, for example, self-weight bending and/or thermal bending ofthe shadow mask 81 and (ii) adjusts the elongation rate of the shadowmask 81.

The present embodiment aligns the shadow mask 81 with a referenceposition in the device with use of the absolute-alignment markers 110and the absolute alignment reference marker 120 as described above.Thus, even in the case where, for example, (i) the vapor depositiondevice 50 is an inline device, (ii) the substrate moving mechanism 70 isa carrying device including a substrate carrying path, and (iii) theshadow mask 81 and the vapor deposition source 85 extend over the filmformation substrate 200, the present embodiment can narrow (limit) aregion in which a vapor deposition distribution can be maintained.

In other words, the present embodiment can (i) align the shadow mask 81with the absolute position (that is, a reference position in the device)with use of the absolute-alignment markers 110 and the absolutealignment reference marker 120 as described above, and thus (ii) adjustthe shadow mask 81 to the absolute position. The present embodiment canconsequently accurately fix the respective positions of the vapordeposition device 50 and the shadow mask 81 relative to each other orthe respective positions of the vapor deposition source 84 and theshadow mask 81 relative to each other. (There is, however, a minuteoperating region due to the alignment process as described above.)

In the case where, however, an absolute alignment is not carried out forthe shadow mask 81 by, as described above, using alignment markers foran absolute alignment, although the shadow mask 81 can be positionedroughly, it is impossible to accurately fix (i) the respective positionsof the vapor deposition device 50 and the shadow mask 81 relative toeach other or (ii) the respective positions of the vapor depositionsource 85 and the shadow mask 81 relative to each other. This means thatit is impossible to accurately position the shadow mask 81 in the region(that is, the vapor deposition area) in which vapor deposition particlesfrom the vapor deposition source 85 are deposited.

The shadow mask 81 needs to be placed within a region (vapor depositionarea) in which vapor deposition particles from the vapor depositionsource 85 are deposited. Thus, the vapor deposition area needs to bedesigned to be considerably wide so that no portion of the shadow mask81 is placed outside the vapor deposition area of the vapor depositionsource 85, even if the shadow mask 81 is slightly mispositioned relativeto the vapor deposition area of the vapor deposition source 85, in acase where a positional relationship is not correctly fixed between thevapor deposition area of the vapor deposition source 85 and the openings82 of the shadow mask 81 relative to each other.

In contrast, in the case where the respective positions of the vapordeposition source 85 and the shadow mask 81 relative to each other areaccurately fixed (that is, the position of the shadow mask 81 relativeto the vapor deposition area of the vapor deposition source 85 isaccurately fixed), the vapor depositions area can be narrowed. Thus, thepresent embodiment (i) eliminates the need for a design that includes awide vapor deposition area as a precaution so that no problem ariseseven if the shadow mask 81 is slightly mispositioned, and (ii) allows avapor deposition material to be efficiently deposited onto the filmformation substrate 200. This arrangement consequently improvesefficiency of use of the material.

The present embodiment, as described above, includes alignment markersfor an absolute alignment in (i) the shadow mask 81 and (ii) a positionin either the mask unit 80 or the vacuum chamber 60 which position facesthe shadow mask 81. In addition, the vapor deposition device 50 includesthe constituent elements illustrated in FIG. 29. This arrangement makesit possible to correct parallelism, that is, to cause the substratescanning direction to be parallel to a side of each opening 82 of theshadow mask 81 which side needs to be parallel to the substrate scanningdirection.

The constituent elements illustrated in FIG. 29 are each used as analignment mechanism for carrying out a parallelism adjustment betweenthe shadow mask 81 and the substrate scanning direction with use of thealignment markers for an absolute alignment (in other words, aparallelism adjustment of the shadow mask 81 in the vapor depositiondevice 50).

Thus, in the case where the film formation substrate 200 is movedrelative to the shadow mask 81, it is possible, even if mispositioningbetween the film formation substrate 200 and the shadow mask 81 is notcorrected by constantly carrying out an alignment during a substratescan for vapor deposition, to deposit vapor deposition particles onto atarget region (stripe-shaped region) by simply carrying out an alignmentonce with use of the alignment markers 221 of the film formationsubstrate 200 and the alignment markers 84 of the shadow mask 81 beforethe vapor deposition region 210 of the film formation substrate 200reaches the openings 82 of the shadow mask 81.

The above arrangement can (i) prevent the vapor deposition film 211 formhaving edge blurring caused by θ mispositioning between the substratescanning direction and the openings 82 of the shadow mask 81, andconsequently (ii) more accurately form a predetermined pattern (vapordeposition pattern) of the vapor deposition film 211.

The present embodiment, as described above, includes alignment markersfor an absolute alignment in (i) the shadow mask 81 and (ii) a positionin either the mask unit 80 or the vacuum chamber 60 which position facesthe shadow mask 81. This arrangement fixes either the absolute positionof the shadow mask 81 inside the vacuum chamber 60 or the position ofthe shadow mask 81 relative to the vapor deposition source 85. Thus inthe case where the film formation substrate 200 is moved relative to theshadow mask 81, the ON/OFF control for vapor deposition can be carriedout, even without recognition of the alignment markers 221 of the filmformation substrate 200, on the basis of the distance (absolute distancefor substrate movement) from the film formation substrate 200 to thealignment markers for an absolute alignment along the scanning directionfor the film formation substrate 200.

The present embodiment describes an example case in which, similarly toEmbodiment 7 as described above, (i) the mask tension mechanism 88includes mask clamps 130 and (ii) tension is applied to the shadow mask81 by means of the mask clamps 130. The present embodiment is, however,not limited to such an arrangement.

FIG. 30 is a cross-sectional view schematically illustrating aconfiguration of a main part provided inside the vacuum chamber 60 ofthe vapor deposition device 50 of FIG. 3 which vapor deposition device50 includes absolute-alignment markers 110 and absolute alignmentreference markers 120.

The vapor deposition device 50 is, as illustrated in FIG. 30, arrangedsuch that, to place the shadow mask 81 at an absolute position, (i) themask holding member 87 includes absolute alignment reference markers 120corresponding to the absolute position of the shadow mask 81 and (ii)the shadow mask 81 includes absolute-alignment markers 110.

In the case where (i) the mask holding member 87 includes absolutealignment reference markers 120 and (ii) the mask holding member 87includes a slider mechanism as described above, the absolute alignmentreference markers 120 are, as illustrated in FIG. 30, provided outsidethe range of motion of movable sections 142 of the slider mechanism,that is, at such positions that the absolute alignment reference markers120 are not shifted in position (slid) or covered by the movablesections 142.

In this case, (i) the tension control section 163, on the basis of acorrection signal from the computing section 162, adjusts, by means ofthe slider mechanism, tension applied to the shadow mask 81, and (ii) analignment adjustment is carried out by sliding the movable sections 142to move the absolute-alignment markers 110 relative to the absolutealignment reference markers 120.

FIG. 30 describes an example case in which, as described above, the maskholding member 87 includes absolute alignment reference markers 120 forplacing the shadow mask 81 at the absolute position. The absolutealignment reference markers 120 thus provided on the device side asalignment references, however, each simply need to be provided at such afixed position in the vapor deposition device 50 as to, during analignment adjustment, (i) face the shadow mask 81 and (ii) not beshifted in position. Similarly, in FIG. 27 as well, the absolutealignment reference markers 120 provided on the device side as alignmentreferences each simply need to be provided at such a fixed position inthe vapor deposition device 50 as to, during an alignment adjustment,(i) face the shadow mask 81 and (ii) not be shifted in position.

Thus, the absolute alignment reference markers 120 may alternativelyeach be provided, for example, on (i) an inner wall, such as a bottomwall, of the vacuum chamber 60 or (ii) the vapor deposition source 85.

In the case where the mask holding member 87 includes a slider mechanismas described above, the vapor deposition source 85 is, needless to say,also provided outside the range of motion of movable sections of theslider mechanism.

FIGS. 1 and 30 each illustrate an example case in which the vapordeposition source 85 is placed on the mask holding member 87. Where toprovide the vapor deposition source 85 (that is, its fixing position)is, however, not limited to such a position as described above. Thevapor deposition source 85 may be provided at such a position in thevapor deposition device 50 as to not interfere with the mask holdingmember 87, for example, provided to the vacuum chamber 60 itself.

In the case where the mask unit 80 is moved relative to the filmformation substrate 200, the present embodiment, may, of course, bearranged such that (i) the mask holding member 87 itself is providedmovably along the x axis direction and the y axis direction, and (ii)the vapor deposition source 85 is movable together with the shadow mask81 and the mask holding member 87 in a state in which the respectivepositions of the vapor deposition source 85 and the shadow mask 81 arefixed relative to each other as described above.

The present embodiment describes an example case in which the movablesections 142 are each connected to, for example, a slider to function asa movable section. The present embodiment is, however, not limited tosuch an arrangement. The present embodiment may alternatively bearranged such that (i) the movable sections 142 themselves are slidablealong the up-and-down direction by, for example, a hydraulic pump, and(ii) sliding the movable sections 142 along the up-and-down directioncan adjust the tension applied in the shadow mask 81.

Embodiment 9

The present embodiment is described below mainly with reference to FIG.31.

FIG. 31 is a cross-sectional view schematically illustrating aconfiguration of a main part provided inside the vacuum chamber 60 ofthe vapor deposition device 50 of the present embodiment. As in theembodiments above. FIG. 31 illustrating the present embodiment omitssome constituent elements, such as openings of the shadow mask 81 and avapor deposition film, for convenience of illustration. A plan view,taken from above the shadow mask 81, of a region R defined by a dottedline in FIG. 31 is identical to that of FIG. 28.

The present embodiment describes an example case in which as inEmbodiments 7 and 8 above, the shadow mask 81 is fixed (attached in atensioned state) with use of mask clamps 130 and 130. The presentembodiment mainly deals with how the present embodiment is differentfrom Embodiments 7 and 8 above.

Embodiments 7 and 8 above each describe a case in which tension isapplied, with use of mask clamps 130 and 130 provided at respectiveopposite end sections of the shadow mask 81 which opposite end sectionsare juxtaposed along the long-side direction of the shadow mask 91, tothe shadow mask 81 at its opposite ends that are juxtaposed along thelong-side direction of the shadow mask 81.

In this case, however, the shadow mask 81 may be subjected to a twist(torsion) depending on the state of an alignment. An example of such acase is one in which in Embodiments 7 and 8 above, one of the maskclamps 130 is moved in the direction from the back side of FIGS. 25 and28 to the front side thereof, whereas the other mask clamp 130 is movedin the direction from the front side of FIGS. 25 and 28 to the back sidethereof.

The above problem, of course, does not arise if an alignment along aparallel line direction (that is, an alignment along a paralleldirection) is carried out without fail during the alignment. The aboveproblem may, however, arise if, for example, the alignment position ismisrecognized.

In view of this, the present embodiment describes a case in whichtension applied to the shadow mask 81 is adjusted by (i) fixing a firstone of the mask clamps 130 to the mask holding member 87 and (ii)applying tension, by means of a second one of the mask clamps 130 whichsecond one is provided opposite on the first one of the mask clamps 130,to the shadow mask 81 at only one of its end section (that is, in onlyone direction) that are juxtaposed along the long-axis direction of theshadow mask 81.

The mask unit 80 of the present embodiment, as illustrated in FIG. 31,includes, as the mask holding member 87, (i) mask supporting sections141 (mask supporting bars; mask holding strands) and (ii) a mask fixingstand 144.

The mask fixing stand 144 is arranged such that (i) it includes a slidemechanism, (ii) one of connection sections connected to a mask clamp 130is a movable section 142, (iii) a tension adjustment for the shadow mask81 can be carried out through a length adjustment, and (iv) the maskclamps 130 can be moved in the back-and-forth direction and theleft-and-right direction, and subjected to a θ (rotary) movement.

While the mask clamps 130 have respective connection sections, namelythe movable section 142 and a fixing section 143, the movable section142 is connected to, for example, a slider to function as a movablesection.

The shadow mask 81 of the present embodiment is, as illustrated in FIG.31, (i) fixed (clamped) integrally to the fixing section 143 of the maskfixing stand 144, and (ii) subjected to tension via the mask clamp 130fixed to the movable section 142. The shadow mask is thus subjected toan absolute alignment, and is further relatively aligned with the filmformation substrate 200.

The present embodiment is, as described above, arranged such that (i) itis mainly the mask fixing stand 144 that serves, by means of one of themask clamps 130, as an alignment mechanism and a tension mechanism, and(ii) the shadow mask 81 is clamped to the mask fixing stand 144 by meansof the other mask clamp 130 as described above. The shadow mask 81 isthus subjected to tension in only one axis direction. This arrangementprevents torsion in the shadow mask 81 itself, and thus ensures a stableoperation.

The mask supporting section 141, as in Embodiments 7 and 8 above, (i)serve to hold the shadow mask 81 in such a manner that the shadow mask81 is in parallel to the film formation substrate 200 and also (ii)serve as a fulcrum for applying tension to the shadow mask 81. The masksupporting sections 141 may each be fixed to an inner wall, such as aperipheral wall, of the vacuum chamber 60 or to a fixed position of themask fixing stand 144 which fixed portion is not slid.

The mask supporting section 141 provided for the mask clamp 130 that isnot connected to the slider mechanism does not serve as a fulcrum forapplying tension to the shadow mask 81, and thus simply needs to becapable of holding the shadow mask 81 horizontally. Thus, as illustratedin FIG. 31, there may alternatively be, for example, (i) two masksupporting sections 141 provided above and below the shadow mask 81respectively for the mask clamp 130 that is not connected to the slidermechanism or (ii) a roller member for a sandwiching the shadow mask 81to hold it.

The present embodiment is, as described above, arranged such that (i) itis mainly the mask fixing stand 144 that serves, by means of one of themask clamps 136, as an alignment mechanism and a tension mechanism, and(ii) the shadow mask 81 is clamped to the mask fixing stand 144 by meansof the other mask clamp 130 as described above. Thus, the mask tensionmechanism 88 and the mask holding member 87 are provided integrally witheach other, so that the mask holding member 87 doubles as the masktension mechanism 88.

The present embodiment, as illustrated in FIG. 31, describes and examplecase in which an absolute alignment is carried out for the shadow mask81 with use of (i) the absolute-alignment markers 110 provided to theshadow mask 81 and (ii) the absolute alignment reference markers 120provide in the vapor deposition device 50.

The present embodiment is, however, not limited to such an arrangement.It is alternatively possible to omit the absolute position alignmentinvolving the use of the absolute-alignment markers 110 and the absolutealignment reference markers 120. The present embodiment mayalternatively be arranged, as described above, such that, for example,the mask clamps 130 are moved to their respective home positions (thatis, default positions set for the device) to adjust (place) the shadowmask 81 itself to its home position.

The above arrangement makes it possible to simplify the deviceconfiguration as compared to the case involving the use of theabsolute-alignment markers 110 and the absolute alignment referencemarkers 120.

In the case where, however, an absolute alignment is not carried out forthe shadow mask 81 by, as described above, using alignment markers foran absolute alignment, although the shadow mask 81 can be positionedroughly, it is impossible to accurately fix (i) the respective positionsof the vapor deposition device 50 and the shadow mask 81 relative toeach other or (ii) the respective positions of the vapor depositionsource 85 and the shadow mask 81 relative to each other. This makes itimpossible to accurately position the shadow mask 81 in the region (thatis, the vapor deposition area) in which vapor deposition particles fromthe vapor deposition source 81 are deposited. The vapor deposition areaneeds to be designed to be considerably wide so that no portion of theshadow mask 81 is placed outside the vapor deposition area of the vapordeposition source 85 even if the shadow mask 81 is slightlymispositioned relative to the vapor deposition area of the vapordeposition source 85.

Thus, in the present embodiment as well as the embodiments above, if isdesirable to provide (i) absolute-alignment markers 110 to the shadowmask 81 and (ii) absolute alignment reference markers 120 to either themask unit 80 (specifically to, for example, the vapor deposition source85 or mask fixing stand 144 included in the mask unit 80) or a positionin the vacuum chamber 60 which position faces the shadow mask 81.

FIG. 31 illustrates an example case in which the vapor deposition source85 is placed on the mask fixing stand 144. In the present embodiment aswell as the embodiments above, where to provide the vapor depositionsource 85 (that is, its fixing position) may be a position, such as thevacuum chamber 60 itself, in the vapor deposition device 50 whichposition does not interfere with the mask fixing stand 144.

In the case where the mask unit 80 is moved relative to the filmformation substrate 200, the present embodiment may alternatively bearranged such that (i) the mask fixing stand 144 itself is providedmovably in the x axis direction and the y axis direction, and (ii) thevapor deposition source 85 is moved together with the shadow mask 81 andthe mask fixing stand 144 in a state in which the respective positionsof the vapor deposition source 85 and the shadow mask 81 are fixedrelative to each other as described above.

Embodiment 10

The present embodiment is described below mainly with reference to FIG.32.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 8 above. Constituent elements ofthe present embodiment that are identical in function to theirrespective equivalents described in Embodiments 1 through 8 are eachassigned the same reference numeral, and are not described here.

FIG. 32 is a cross-sectional view schematically illustrating aconfiguration of a main part provided inside the vacuum chamber 60 ofthe vapor deposition device 50 of the present embodiment. As in theembodiments above, FIG. 32 illustrating the present embodiment omitssome constituent elements, such as openings of the shadow mask 81 and avapor deposition film, for convenience of illustration. A plan view,taken from the shadow mask 81 side (that is, from below the shadow mask81), of a region R defined by a dotted line in FIG. 32 is identical tothat of FIG. 28.

As illustrated in FIG. 32, the vapor deposition device 50 of the presentembodiment differs from the vapor deposition device 50 of Embodiment 8above in that, as in Embodiment 3 above, the mask unit 80 and thesubstrate holding member 71 for holding the film formation substrate 200are positioned inversely along the vertical direction.

In other words, while Embodiment 8 above carries out vapor deposition bydepo-up, the present embodiment carries out vapor deposition bydepo-down.

The vapor deposition device 50 of the present embodiment is arrangedsuch that (i) the substrate holding member 71 includes, for example, asubstrate stage provided movably along an x direction and a y direction,and that (ii) the film formation substrate 200 is held by the substratestage. The substrate stage may have the function as an electrostaticchuck. The present embodiment may alternatively be arranged such that(i) the substrate holding member 71 includes, instead of the substratestage, a roller as described in Embodiment 1 above, and that (ii) thefilm formation substrate 200 is held and moved by the roller.

The vapor deposition source 85 of the present embodiment is held by aholding member (not illustrated in FIG. 32) (that is, a vapor depositionsource holding member), such as a holder, which is, for example, fixedto the vacuum chamber 60 and in which the vapor deposition source 85 is,for example, placed to be contained and fixed. The holding member is,for example, similar to the holder used in Embodiment 3 above. Theholding member is fixed to, for example, a top wall or peripheral wallof the vacuum chamber 60.

The present embodiment, as in Embodiment 8 above, (i) uses mask clamps130 and 130 as the mask tension mechanism 88 and (ii) applies tension tothe shadow mask 81 in obliquely downward directions by using each of themask supporting sections 141 and 141 (mask supporting bars; mask holdingstands) as a fulcrum.

The present embodiment is thus arranged such that the mask supportingsections 141 and 141 are each either fixed to a peripheral wall orbottom wall of the vacuum chamber 60 or (i) provided in an L-shape orU-shape (concave) to allow the shadow mask 81 to be placed thereon and(ii) attached to and suspended from the vapor deposition source holdingmember or the top wall of the vacuum chamber 60. The absolute alignmentreference markers 120 are provided in, for example, (i) an inner wall,such as a bottom wall, of the vacuum chamber 60 or (ii) the vapordeposition source 85.

The present embodiment describes a case in which tension is applied tothe shadow mask 81 in obliquely downward directions as described above.The present embodiment is, however, not limited to such an arrangement.

In a case where, for example, tension is applied to the shadow mask 81in, for example, obliquely upward direction, the present embodiment maybe arranged, for example, as follows: The mask supporting sections 141and 141 are provided on a surface of the shadow mask 81 which surfacefaces the vapor deposition source 85. The shadow mask 81 and the vapordeposition source 85 are attached to and suspended from (i) a maskholding member (not illustrated in FIG. 32), such as a holder, in whichthe shadow mask and the vapor deposition source are for example, placedto be contained and fixed or (ii) for example, the top wall of thevacuum chamber 60. Further, the mask clamps 130 and 130 are fixed to themask holding member or to an inner wall, such as the top wall orperipheral wall, of the vacuum chamber 60.

In this case, the absolute alignment reference markers 120 may each beprovided either (i) to the mask holding member or (ii) to the top wallof the vacuum chamber 60 or the vapor deposition source 85.

Even in the case where, for example, (i) depo-down is carried out asdescribed above or (ii) the absolute-alignment markers 110 and theabsolute alignment reference markers 120 are positioned inversely alongthe vertical direction, the absolute-alignment markers 110 and theabsolute alignment reference markers 120 are aligned with each other ina manner identical to the manner described in Embodiment 8 above. Thepresent embodiment thus does not described such a manner.

Embodiment 11

The present embodiment is described below mainly with reference to FIGS.33 through 35.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 10 (particularly, Embodiment 8)above. Constituent elements of the present embodiment that are identicalin function to their respective equivalents described in Embodiments 1through 10 are each assigned the same reference numeral, and are notdescribed here.

FIG. 33 is a plan view of the film formation substrate 200 and the maskunit 80 in the vacuum chamber 60 of the vapor deposition device 50 ofthe present embodiment, as viewed from a back surface side of the filmformation substrate 200. FIGS. 34 and 35 are each a cross-sectional viewschematically illustrating a configuration of a main part providedinside the vacuum chamber 60 of the vapor deposition device 50 of thepresent embodiment. FIG. 34 illustrates a cross section of the vapordeposition device 50 which cross section is taken along line E-E in FIG.33. FIG. 35 illustrates a cross section of the vapor deposition device50 which cross section is taken along line F-F in FIG. 33. As in theembodiments above, FIGS. 33 through 35 illustrating the presentembodiment omit some constituent elements, such as openings of theshadow mask 81 and a vapor deposition film, for convenience ofillustration. A plan view, taken from above the shadow mask 81, of aregion R defined by a dotted line in FIG. 35 is identical to that ofFIG. 28.

The mask unit 80 and the mask tension mechanism 88 of the presentembodiment are, as illustrated in FIG. 33, different from those ofEmbodiment 8 above in that the shadow mask 81 is provided with maskclamps 130 at respective corner sections (four corners) thereof.

In the present embodiment having the above arrangement, the alignmentbetween the absolute-alignment markers 110 and the absolute alignmentreference markers 120 both illustrated in FIG. 35 is carried out whiletension is adjusted by moving the four individual mask clamps 130illustrated in FIG. 33 that are provided at the respective cornersections of the shadow mask 81.

The shape of the absolute-alignment markers 310 and the alignmentbetween the absolute-alignment markers 110 and the absolute alignmentreference markers 120 are as described in Embodiment 8 above withreference to FIGS. 29 and 30. The present embodiment thus does notprovide a detailed description thereof.

The four mask clamps 130 are each individually movable along the x axis(±x axis) direction and the y axis (±y axis) direction in FIG. 33. Anabsolute alignment is carried out immediately before vapor deposition byapplying tension to the shadow mask 81 to such an extend that there isno bending (slack) in the shadow mask 81.

In particular, in the case where the distance between the vapordeposition source 85 and the shadow mask 81 is decreased as describedabove, the temperature of the shadow mask 81 increases when the vapordeposition rate has been stabilized at a target vapor deposition rate.The shadow mask 81 is bent as a result.

The vapor deposition position can thus be finely adjusted by (i)preparing in advance a shadow mask 81 with a size smaller than designedvalues to absorb thermal expansion of the shadow mask 81 and (ii)applying tension to the shadow mask 81 with reference to the absolutealignment reference markers 120 so that the shadow mask 81 is placed atthe absolute position (corresponding to the designed absolute values).The above arrangement can further control thermal deformation of theshadow mask 81.

In the present embodiment, the mask clamps 130 are (i) provided at therespective corner sections (four corners) of the shadow mask 81 and (ii)each movable along the x axis direction and the y axis direction. Thepresent embodiment can thus apply tension to the shadow mask 81 in alldirection (360 degrees). In other words, the present embodiment canapply tension to the shadow mask 81 in any direction. The presentembodiment can thus carry out a finer position adjustment thanEmbodiment 8 above, and have a higher alignment accuracy than Embodiment8 above. The present embodiment can consequently further improve vapordeposition accuracy.

The film formation substrate 200 is desirably held by the substrateholding member 71, for example, an electrostatic chuck, to preventself-weight bending of the film formation substrate 200.

In the present embodiment as well as the embodiments above, the filmformation substrate 200 and the shadow mask 81 can be aligned with eachother, as in Embodiment 1 above, with use of the alignment markers 84and 221.

In the present embodiment as well as the embodiments above, an alignmentmarker 84 is preferably located at an end of the shadow mask 81 whichend is located downstream in the direction in which the substrate makesits entry (that is, an end of the shadow mask 81 which end is locatedupstream in the substrate scanning direction). In the case wherereciprocating vapor deposition is carried out, alignment markers 84 arepreferably located at both ends along the substrate scanning direction(that is, at the four corners).

In this case, if, for example, (i) vapor deposition is carried out inthe substrate scanning direction indicated by an arrow in FIG. 33, thealignment between the film formation substrate 200 and the shadow mask81 is carried out with use of, among the four alignment markers 84provided in the alignment marker sections 83 of the shadow mask 81, thetwo alignment markers 84 on the left in FIG. 33, and if (ii) vapordeposition is carried out in the direction opposite to the substratescanning direction indicated by the arrow in FIG. 33, the alignmentbetween the film formation substrate 200 and the shadow mask 81 iscarried out with use of the two alignment markers 84 on the right inFIG. 33.

The alignment between the film formation substrate 200 and the shadowmask 81 is carried out as follows: When the alignment marker sections220 of the film formation substrate 200 reach the alignment markersections 83 of the shadow mask 81, the movement (scan) of the filmformation substrate 200 is temporarily stopped. Then, (i) the substrateholding member 71 (the substrate moving mechanism 70) such as asubstrate stage and (ii) the mask clamps 130, for example, are moved inconsideration of the respective positions of the shadow mask 81 and thefilm formation substrate 200, parallelism of the film formationsubstrate 200, and the size of the shadow mask 81. Preparing in advancethe shadow mask 81 with a small size as described above allows the masktension mechanism 88 to function as such to prevent bending of theshadow mask.

In the present embodiment as well as the embodiments above, thesubstrate position is corrected with use of the alignment markers 84 and221 before the film formation substrate 200 enters the region (vapordeposition area) in which vapor deposition particles from the vapordeposition source 85 are deposited. Thus, in the present embodiment aswell as the embodiments above, the alignment markers 221 (that is, thealignment marker sections 220) are located away, downstream and upstreamin the substrate scanning direction respectively, from respectiveopposite ends of the vapor deposition region 210 which ends arejuxtaposed along the substrate scanning direction (see FIG. 33).

In the present embodiment as well as the embodiments above, the filmformation substrate 200 is, for example, the TFT substrate 10 describedabove. With this arrangement, in the case of carrying out, as a patternformation for the vapor deposition film 211, a pattern formation fororganic EL layers such as the luminous layers 23R, 23G, and 23B asdescribed above, the present embodiment can carry out discriminativeapplication vapor deposition of such organic EL layers accurately.

In the above case, vapor deposition can be carried out under conditionsthat are, for example, similar to those described in Embodiment 1 above.

The present embodiment, as an example, assumed (i) 100 mm for the gap g2between the vapor deposition source 85 and the shadow mask 81 and (ii)200 μm for the distance between the TFT substrate 10 serving as the filmformation substrate 200 and the shadow mask 81.

The present embodiment further assumed (i) for a substrate size of theTFT substrate 10, 320 mm along the scanning direction and 400 mm alongthe direction perpendicular to the scanning direction and (ii) forwidths of the vapor deposition region (display region), 260 mm for thewidth along the scanning direction (that is, the width d4) and 310 mmfor the width (that is, the width d3) along the direction perpendicularto the scanning direction.

The present embodiment assumed 360 μm (along the scanning direction)×90μm (along the direction perpendicular to the scanning direction) forwidths of the openings 15R, 15G, and 15B for the respective sub-pixels2R, 2G, and 2B of the TFT substrate 10. The present embodiment furtherassumed 480 μm (along the scanning direction)×160 μm (along thedirection perpendicular to the scanning direction) for a pitch betweenthe opening 15R, 15G, and 15B. In the present embodiment as well as theembodiments above, the pitch between the openings 15R, 15G, and 15B(that is, a pitch between pixel openings) refers to a pitch betweenrespective openings 15R, 15G, and 15B for the sub-pixels 2R, 2G, and 2Badjacent to one another, but not to a pitch between sub-pixels of anidentical color.

The present embodiment used, as the shadow mask 81, a shadow mask having(i) a length of 700 mm along the width d1 (that is, the width along thedirection perpendicular to the scanning direction) along each long side81 a (corresponding to the long-axis direction) and (ii) a length of 200mm along the width d2 (that is, the width along the scanning direction)along each short side 81 b (corresponding to the short-axis direction).

The openings 82 of the shadow mask 81 were each in the shape of a slot(slot pattern) for reinforcement against a tension load on the shadowmask 81. The openings 82 of the shadow mask 81 were, in the size(absolute dimensions; designed values) taking thermal expansion and amask tension into consideration, (i) each (that is, a single slotpattern) 4 mm along the substrate scanning direction and 130 μm alongthe direction perpendicular to the substrate scanning direction, (ii) 5mm in pitch along the substrate scanning direction, and (iii) 480 μm inpitch along the direction perpendicular to the substrate scanningdirection. The present embodiment included 30 slots along the substratescanning direction, each of which had a pattern length of 150 mm. Thevapor deposition rate was 2.0 nm/s.

Embodiment 12

The present embodiment is described below mainly with reference to FIGS.36 through 45.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 11 above. Constituent elements ofthe present embodiment that are identical in function to theirrespective equivalents described in Embodiments 1 through 11 are eachassigned the same reference numeral, and are not described here.

Embodiments 1 through 11 above each describe, as a method for aligningthe film formation substrate 200 and the shadow mask 81 with each other,(i) an example method for aligning the film formation substrate 200 andthe shadow mask 81 with each other before vapor deposition on the basisof image recognition by the image sensor 90, or (ii) an example methodfor aligning the film formation substrate 200 and the shadow mask 81with each other in real time on the basis of continuous imagerecognition by the image sensor 90.

The above example methods do not, however, ensure absolute reliabilityof mechanical accuracy in scanning the film formation substrate 200 orthe mask unit 80 (relative movement thereof).

Thus, merely aligning the film formation substrate 200 and the shadowmask 81 with each other with use of the alignment markers 84 and 221before the start of vapor deposition unfortunately leaves the risk ofmispositioning between the film formation substrate 200 and the shadowmask 81, the mispositioning being caused by various factors such as theabove mechanical accuracy, respective thermal expansions of the filmformation substrate 200 and the shadow mask 81, and mispositioning of apattern of the film formation substrate 200 such as the TFT substrate10. Further, accuracy in image recognition is decreased in the casewhere, while a scan is carried out, the alignment markers 84 and 221 aresimultaneously recognized from an image sensed by an image sensingelement (image sensing means), such as a CCD, that is attached to thevacuum chamber 60. In particular, in the case where the mask unit 80 ismoved relative to the film formation substrate 200, it is necessary toprovide a plurality of image sensing elements or move the image sensingelement in synchronization with the scan (relative movement) of the maskunit 80. In this case, accuracy in recognition is undeniably decreased.

FIG. 36 is a plan view illustrating a vapor deposition pattern formed onthe film formation substrate 200 in a case where there occursmispositioning between the film formation substrate 200 and the shadowmask 81.

Mispositioning between the film formation substrate 200 and the shadowmask 81, as illustrated in FIG. 36, leads to mispositioning of a vapordeposition pattern formed on the film formation substrate 200.

In view of this, the present embodiment continuously monitors(recognizes), with use of an alignment sensor (alignment observingmeans) and throughout a vapor deposition period, an alignment patternformed on the film formation substrate 200 from end to end of a region,along the scanning direction of the film formation substrate 200, inwhich region at least a first one of the mask unit 80 and the filmformation substrate 200 is moved relative to a second one thereof. Thisarrangement allows a scan and vapor deposition to be carried out whilethe alignment between the film formation substrate 200 and the shadowmask 81 is dynamically carried out by moving at least the first one ofthe film formation substrate 200 and the mask unit 80 relative to thesecond one thereof.

The present embodiment controls in real time the amount atmispositioning between the film formation substrate 200 and the shadowmask 81 as described above to prevent misalignment of the film formationsubstrate 200.

FIG. 37 is a cross-sectional view schematically illustrating aconfiguration of a main part of the vapor deposition device 50 of thepresent embodiment. FIG. 38 is a bird's eye view of main constituentelements inside the vacuum chamber 60 of the vapor deposition device 50illustrated in FIG. 37. FIG. 39 is a plan view taken from a back surfaceside of the film formation substrate and illustrating positionalrelationships, observed in the film formation substrate 200 for use inthe present embodiment, between an alignment pattern and a vapordeposition pattern and between an alignment sensor and a film thicknesssensor. FIG. 39 illustrates a state observed in the process of a filmformation. FIG. 39 indicates the film formation substrate by a chaindouble-dashed line for convenience of illustration. FIGS. 40 and 41 areeach a block diagram partially illustrating a configuration of the vapordeposition device 50 illustrated in FIG. 37.

The vapor deposition device 50 of the present embodiment, as illustratedin FIG. 37, includes: a vacuum chamber 60 (film growing chamber); asubstrate moving mechanism 70 (substrate moving means; moving means); amask unit 80; an alignment sensor 170 (alignment observing means); afilm thickness sensor 180; and a control circuit 230.

The vapor deposition device 50 of the present embodiment is, asillustrated in FIGS. 37 through 39, different from those of Embodiments1 through 11 above in that it includes, as alignment observing means, analignment sensor 170 that is fixed in position relative to the shadowmask 81 and that is so provided in the vacuum chamber 60 as to beadjacent to the shadow mask 81 and the vapor deposition source 85 (thatis, at such a position that the alignment sensor is next to the shadowmask and the vapor deposition source).

The alignment sensor 170 simply needs to be fixed in position relativeto the shadow mask 81 similarly to the vapor deposition source 85, andmay be integrated with or independent of the mask unit 80.

More specifically, in a case where the mask unit 80 is fixed inside thevacuum chamber 60 and the film formation substrate 200 is moved relativeto the mask unit 80, the alignment sensor 170 may be, for example, (i)fixed directly to an inner wall of the vacuum chamber 60 or (ii) held bya mask holding member 87 (not illustrated in FIG. 37; see, for example,FIG. 1), similarly to the vapor deposition source 85. In a case wherethe mask unit 80 is moved relative to the film formation substrate 200,the alignment sensor 170 may be held by the mask holding member 87 (see,for example, FIG. 1). Further, the alignment sensor 170 mayalternatively be held by an alignment sensor 170, the alignment sensormoving mechanism being (i) provided separately from the mask holdingmember 87 and (ii) moved relative to the film formation substrate 200while maintaining its position relative to the mask unit 80 (that is,the alignment sensor moving mechanism follows a mask unit movingmechanism 240 [see FIG. 40] including the mask holding member 87).

In the case where the alignment sensor 170 is provided independently ofthe mask unit 80, it is necessary to carry out an alignment to fix therespective positions of the alignment sensor 170 and the shadow mask 81relative to each other.

The alignment sensor 170 is thus preferably incorporated in (that is,integrated with) the mask unit 80. In other words, the mask unit 80preferably includes an alignment sensor 170 that is fixed in positionrelative to the shadow mask 81 (in which case also, there is a minuteoperating region due to the alignment process as described above).

The alignment sensor 170 is not particularly limited as long as it iscapable of continuously observing an alignment pattern formed on thefilm formation substrate 200.

The alignment sensor 170 may be an optical sensor or a sensor (forexample, an ultrasonic sensor) other than an optical sensor.

The optical sensor is, for example, (i) an image sensor including animage sensing element (image sensing means) such as a CCD, (ii) a sensorfor detecting the intensity of reflection of, for example, laser lightor infrared light, or (iii) a sensor for detecting the distribution oflight scattered by the alignment markers 221.

In the case where the alignment sensor 170 is, as described above, asensor for detecting the intensity of reflection of, for example, laserlight or infrared light, the respective positions of the alignmentmarkers 221 can be detected from the intensity of reflection. In thecase where the alignment sensor 170 is, as described above, a sensor fordetecting the distribution of light scattered by the alignment markers221, the respective positions of the alignment markers 221 can bedetermined from a variation in the distribution of light scattered bythe alignment marker 221.

The optical sensor is, for example, a sensor, such as (i) a positionsensor, (ii) an LED alignment sensor, and (iii) a detector (for example,a half-divided detector or a quadrantly-divided detector), which detectsthe position of a luminous flux to measure the position of a detectionobject.

Any of the above sensors can be a commercially available sensor. Amongothers, an undivided position sensor is capable of measuring theposition of a rapidly moving spot with high precision.

The alignment sensor 170 can detect the alignment markers 221 by any ofvarious publicly known systems such as LSA (laser step alignment) systemand LIA (laser interferometric alignment) system.

The substrate position is, as described above, desirably corrected withuse of the alignment markers 84 and 221 before the film formationsubstrate 200 enters a region (vapor deposition area) in which vapordeposition particles from the vapor deposition source 85 are deposited.

Thus, in the present embodiment as well as the embodiments above, analignment marker 84 of the shadow mask 81 is preferably provided at anend of the shadow mask 81 which end is located downstream in thedirection in which the substrate makes its entry. More preferably,alignment markers 84 are provided at both ends of the shadow mask 81which ends are juxtaposed along the substrate entry direction.

Thus, the alignment sensor 170 is, similarly to the alignment markers84, preferably so provided as to face the end of the shadow mask 81which end is located downstream in the substrate entry direction, ormore preferably so provided as to face both ends of the shadow mask 81which ends are juxtaposed along the substrate entry direction.

In the case where, for example, reciprocating vapor deposition iscarried out, alignment markers 84 are preferably provided, as describedabove, at both ends juxtaposed along the substrate scanning direction(that is, at the four corners). Thus, in the case where reciprocatingvapor deposition is carried out, there is preferably (i) also provided,as indicated by a chain double-dashed line in FIGS. 37 through 39, analignment sensor 170 at such a position as to, in the case where thefilm formation substrate 200 and the mask unit 80 are moved relative toeach other (that is, scanned) in the direction opposite to the substratescanning direction indicated by an arrow in FIGS. 37 through 39, facethe end of the shadow mask 81 which end is located downstream in thesubstrate entry direction, or there are (ii) more preferably alsoprovided alignment sensors 170 at such positions as to face both ends ofthe shadow mask 81 which ends are juxtaposed along the substrate entrydirection.

Further, it is possible to determine mispositioning (θ mispositioning)along the rotation direction between the shadow mask 81 and the filmformation substrate 200 by, as in the case of providing alignmentmarkers 84 at the four corners of the shadow mask 81, providing (i) aplurality of alignment markers 84 to the shadow mask 81 along thescanning direction and (ii) a plurality of alignment sensors 170 alongthe scanning direction in correspondence with the alignment markers 84.Thus, regardless of whether reciprocating vapor deposition is carriedout, it is preferable to provide a plurality of alignment markers 84 anda plurality of alignment sensors 170 both along the scanning direction(for example, the substrate scanning direction).

As described above, the present embodiment, while carrying out vapordeposition, continuously observes an alignment pattern provided on thefilm formation substrate 200. Thus, the film formation substrate 200 isprovided with, as illustrated in FIG. 39, an alignment pattern that isformed by a plurality of alignment markets 221 throughout the entirescan region of the film formation substrate 200 along the scanningdirection. Further, as described above, the alignment markers 84 and 221are more preferably provided at both ends of the shadow mask 81 whichends are juxtaposed along the substrate entry direction. Thus, thealignment pattern (that is, the alignment marker section 220) ispreferably so provided, along the short sides 210 b and 210 b of thevapor deposition region 210, which are parallel to the substratescanning direction, as to sandwich the vapor deposition region 210.

In the present embodiment, the amount of scanning the film formationsubstrate 200 can be determined accurately by, as described above,continuously monitoring (recognizing) the alignment marker 221(alignment pattern), which as provided along the scanning direction ofthe film formation substrate 200, through the mask openings of theshadow mask 81 throughout a vapor deposition period. This arrangementmakes it possible to carry out vapor deposition control more accurately.

The vapor deposition device 50 of the present embodiment, as illustratedin FIGS. 37 through 39, includes a film thickness sensor 180 for measurethe film thickness of a vapor deposition film 211 formed on the filmformation substrate 200.

The film thickness sensor 180, for example, measures the film thicknessof a vapor deposition film 211 actually deposited on the film formationsubstrate 200, and thus controls the film thickness of the vapordeposition film 211 to be formed on the film formation substrate 200.

The film thickness sensor 180 is, similar to the alignment sensor 170,preferably fixed in position relative to the shadow mask 81 and thevapor deposition source 85. This arrangement allows the film thicknessof the vapor deposition film 211 to be formed on the film formationsubstrate 200 to be controlled continuously and in real time while avapor deposition film 211 is being formed (deposited) on the filmformation substrate 200.

Thus, the film thickness sensor 180 is, for example, provided at aportion of the shadow mask 81 which portion is provided downstream inthe substrate scanning direction (that is, on the downstream side of thesubstrate scanning direction). The film thickness sensor 180 is, forexample, provided (i) at a portion of the shadow mask 81 which portionis located downstream in the substrate scanning direction (that is, onthe downstream side of the substrate scanning direction), (ii) in thevicinity of a central portion, along the substrate scanning direction,of the vapor deposition area of the vapor deposition source 85, and(iii) adjacently to the shadow mask 81 and the vapor deposition source85 (that is, so that the thickness sensor 180 is next to the shadow mask81 and the vapor deposition source 85). The film thickness sensor 180 isdesirably provided at a position that is as close as possible to theshadow mask 81 and the vapor deposition source 85. This arrangementallows the film thickness sensor 180 to observe the vapor depositionfilm 211 on the film formation substrate 800 that has just passed theshadow mask 81.

The film formation substrate 200 includes a portion that faces the filmthickness sensor 180, the portion serving as a film thickness monitorregion section.

The film thickness sensor 180 can be, for example, commerciallyavailable film thickness sensor, and can thus be any film thicknesssensor. The film thickness sensor 180 suitably uses, for example, anon-contact technique of calculating a film thickness by (i) emittinglaser light to the vapor deposition film 211 serving as an object and(ii) detecting, for example, the intensity of reflection of the laserlight or the spectrum of the laser light. The film thickness sensor is,however, not limited to such an arrangement. The film thickness sensormay thus use a technique involving fluorescence based on ultra violetlight or X-rays, or may be a film thickness sensor of an eddy currenttype or a contact type.

The following describes, mainly with reference to FIG. 40, a process(alignment control) carried out by the vapor deposition device 50 for analignment adjustment. The description below deals with an example casein which the alignment sensor 170 is a sensor for measuring theintensity of reflection of laser light. The present embodiment is,however, not limited to such an arrangement.

The alignment sensor 170 functions as position detecting means forcarrying out an alignment between the film formation substrate 200 andthe shadow mask 81.

As illustrated in FIG. 37, the vapor deposition device 50 of the presentembodiment includes, as a control circuit, a control circuit 230 havingthe configuration illustrated in FIGS. 40 and 41.

As illustrated in FIG. 40, the control circuit 230 includes, in itsalignment control section, a detecting section 231 (difference detectingsection; computing section); a correction amount calculating section 232(computing section); a mask drive control section 233; a substrate drivecontrol section 234; a vapor deposition ON/OFF control section 235; anda shutter drive control section 236.

The detecting section 231 and the correction amount calculating section232 correspond to the computing section 102 in FIG. 4. The vapordeposition ON/OFF control section 235 corresponds to the vapordeposition ON/OFF control section 104 in FIG. 4.

The detecting section 231 detects (as a difference), from a detectionsignal from the alignment sensor 170, (i) the amount of positionaldifference (that is, a shift component along the x axis direction andthe y axis direction, and a rotation component on the x-y plane) betweenthe alignment markers 221 and the alignment markers 84 and (ii) theamount of scanning the film formation substrate 200. The detectingsection then transmits a result of the detection to the correctionamount calculating section 232 and the vapor deposition ON/OFF controlsection 235.

The correction amount calculating section 232 determines, on the basisof the detection result received from the detecting section 231, theamount of movement of the film formation substrate 200 and the shadowmask 81 relative to each other (for example, the amount of movement ofthe film formation substrate 200 relative to the shadow mask 81).Specifically, the correction amount calculating section 232 calculates,from the detection result received from the detecting section 231, (i)the amount of alignment correction (that is, the value of correction tothe substrate position of the film formation substrate 200) and (ii) theamount of correction to the substrate scan. The correction amountcalculating section then supplies a result of the calculation, in theform of a correction signal, to the mask drive control section 233, thesubstrate drive control section 234, and the vapor deposition ON/OFFcontrol section 235.

In the present embodiment as well as the embodiments above, the amountof alignment correction (that is, the value of correction to thesubstrate position of the film formation substrate 200) is determined bycomputation with respect to the direction perpendicular to the substratescanning direction and a rotation direction of the film formationsubstrate 200.

The mask drive control section 233 and the mask unit moving mechanism240, on the basis of the correction signal from the correction amountcalculating section 232, move at least a first one of the film formationsubstrate 200 and the mask unit 80 relative to a second one thereof sothat the film formation substrate 200 and the mask unit 80 are eachmoved to a suitable scanning position.

Specifically, the mask drive control section 233, on the basis of thecorrection signal from the correction amount calculating section 232,drives, for example, at least one of (i) a motor 241, such as an XY θdrive motor, that is included in the mask unit moving mechanism (maskunit moving means) 240 connected to the mask unit 80 and (ii) the masktension mechanism 88.

With the above arrangement, the mask unit moving mechanism 240, whilemaintaining the respective positions of the shadow mask 81 and the vapordeposition source 85 relative to each other, moves the mask unit 80relative to the film formation substrate 200 so that the shadow mask 81is at an appropriate vapor deposition position.

The mask tension mechanism 88 adjusts tension to the shadow mask 81 sothat the shadow mask 81 is at an appropriate vapor deposition position.

The substrate drive control section 234 corrects the substrate positionof the film formation substrate 200 by driving, on the basis of thecorrection signal from the correction amount calculating section 232, amotor 272, such as an XY θ drive motor, that is included in thesubstrate moving mechanism 70 and that is connected to the substrateholding member 71.

As described above, the present embodiment (i) derives, from the amountof misalignment and the amount of a substrate scan, their respectivecorrection values and (ii) adjusts (controls) an alignment between theshadow mask 81 and the film formation substrate 200 on the basis of theabove correction values.

In other words, in the present embodiment, the mask unit movingmechanism 240, the mask tension mechanism 88, and the substrate movingmechanism 70 each also function as adjusting means for adjusting therespective positions of the film formation substrate 200 and the shadowmask 81 relative to each other.

The vapor deposition ON/OFF control section 235 calculates, from (i) thesubstrate scan amount detected by the detecting section 231 and (ii) insubstrate scan correction amount calculated by the correction amountcalculating section 232, the position of the film formation substrate200 relative to the vapor deposition area of the vapor deposition source85. The vapor deposition ON/OFF control section then generates (i) avapor deposition ON signal at the start-end of a film formation region(vapor deposition region) for the vapor deposition film 211 and (ii) avapor deposition OFF signal at the rear-end of the film formationregion.

The shutter drive control section 236, upon receipt of a vapordeposition OFF signal from the vapor deposition ON/OFF control section235, closes the shutter 89 by driving a motor 237 (shutter drive motor;motor section) for driving the shutter 89. The shutter drive controlsection, upon receipt of a vapor deposition ON signal from the vapordeposition ON/OFF control section 235, opens the shutter 89 by drivingthe motor 237 (shutter drive motor; motor section) for driving theshutter 89.

The following describes, with reference to (a) and (b) of FIG. 42, amethod for determining the amount of misalignment from the intensity ofreflection of laser light. (a) and (b) of FIG. 42 each illustrate a casein which the film formation substrate 200 is moved relative to theshadow mask 81.

(a) of FIG. 42 is a plan view schematically illustrating an arrangementof a main part of the alignment marker section 220 illustrated in FIG.39. (b) of FIG. 42 is a plan view illustrating a positional relationshipbetween (i) the individual alignment markers 221 making up an alignmentpattern of the alignment markers 221 illustrated in (a) of FIG. 42, (ii)alignment markers 84 of the shadow mask 81, and (iii) laser spots. (b)of FIG. 42 illustrates only alignment markers 84 for the shadow mask 81and omits the shadow mask 81 itself for convenience of illustration.

The alignment markers 221 are preferably made of a high reflectivematerial. The alignment markers 221 are made of, for example, a metalmaterial such as Al (aluminum) and Ti (titanium).

The alignment markers 221 are formed in advance on the film formationsubstrate 200. The alignment markers 221 can be made of, for example, areflective material (high reflective member) such as an electrodematerial used in, for example, the TFT substrate 10. Thus, the alignmentmarkers 221 are desirably (i) formed during an electrode forming stepfor forming, for example, gate electrodes, source electrodes, and drainelectrodes of the film formation substrate 200 such as the TFT substrate10 and (ii) made of the material of which the above electrodes are made.This arrangement makes it possible to avoid, for example, the problem ofan increase in the number of steps which increase arises from providingthe alignment markers 221 to the film formation substrate 200 and theproblem of a cost increase due to, for example, use of another material.

The shadow mask 81 preferably is made of a low reflective material orhas been subjected to a low reflection process.

The alignment markers 84, as described above, each include an opening(mask opening) provided in an alignment marker section 83 of the shadowmask 81.

As illustrated in (b) of FIG. 42, the shadow mask 81 includes, forexample, two alignment markers 84 as the above alignment markers 84along the scanning direction (hereinafter, the two alignment markers 84are referred to as a “first opening 84 a” and a “second opening 84 b” inthe order from the upstream side of the substrate scanning direction).The first opening 84 a and the second opening 84 b are each so placed asto pass a position directly above a pattern border of each alignmentmarker 221.

The first opening 84 a and the second opening 84 b are each irradiatedwith laser light emitted from a laser light emitting section of thealignment sensor 170.

The alignment sensor 170 (i) emits laser light from the laser lightemitting section to the first opening 84 a and the second opening 84 b,(ii) measures the intensity of reflection from laser spots 171 caused bythe laser light emitted to the first opening 84 a and the second opening84 b, and (iii) supplies information on the intensity of reflection tothe control circuit 230 in the form of a detection signal.

The control circuit 230 determines, on the basis of the reflectionintensity measured by the alignment sensor 170, mispositioning between alaser spot 171 and an alignment marker 221, that is, mispositioningbetween an alignment marker 84 (that is, the first opening 84 a and thesecond opening 84 b) and a laser spot 171.

The detecting section 231 in the control circuit 230 detects, from areflection intensity IR1 and a reflection intensity IR2, (i) the amountof positional difference (that is, a shift component along the x axisdirection and the y axis direction, and a rotation component on the x-yplane) between the alignment markers 221 and the individual alignmentmarkers 84 (that is, the first opening 84 a and the second opening 84 b)and (ii) the amount of scanning the film formation substrate 200. Thereflection intensity IR1 refers to the intensity of reflection of laserlight emitted in the form of a spot to the first opening 84 a, that is,the alignment marker 84 located upstream in the substrate scanningdirection. The reflection intensity IR2 refers to the intensity ofreflection of laser light emitted in the form of a spot to the secondopening 84 b, that is, the alignment marker 84 located downstream in thesubstrate scanning direction.

FIG. 43 is a graph illustrating a relation between (i) the intensity ofreflection of laser light and (ii) a period of scanning the filmformation substrate 200, the relation being obtained from a relationbetween the alignment markers 221 and the alignment markers 84 (that is,the first opening 84 a and the second opening 84 b) both illustrated in(b) of FIG. 42.

The graph of FIG. 43 illustrates an initial first period T1, whichindicates a state in which the reflection intensity IR1, in other words,indicates a correct positional relationship between the alignmentmarkers 221 and the individual alignment markers 84 (that is, the firstopening 84 a and the second opening 84 b). With reference to, forexample, the example illustrated in (b) of FIG. 42, the first period T1indicates that respective border sections (that is, a side of eachalignment marker 221 which side is parallel to the substrate scanningdirection) of the alignment markers 221 each pass through respectivecentral portions of the first opening 84 a and the second opening 84 bidentically, and thus indicates a correct alignment between the shadowmask 81 and the film formation substrate 200.

The following second period T2 indicates a decrease in each of thereflection intensities IR1 and IR2. This is because the alignmentmarkers 221, which are provided discontinuously, cannot be observedthrough the first opening 84 a and the second opening 84 b.

The following third period T3 indicates an increase in each of thereflection intensities IR1 and IR2 because the alignment markers 221 canbe observed again through the first opening 84 a and the second opening84 b.

The third period T3, however, indicates that the reflection intensityIR2 is higher than the reflection intensity IR1. This specificallyindicates that (i) an area of an alignment marker 221 which area isexposed through the second opening 84 b is larger than an area of analignment marker 221 which area is exposed through the first opening 84a and that (ii) a larger area of an alignment marker 221 is observedthrough the second opening 84 b than through the first opening 84 a.

In other words, the third period T3 indicates that an alignment marker221 is deviated to the second opening 84 b side and that the alignmentis incorrect between the alignment markers 221 and the alignment markers84 (that is, the first opening 84 a and the second opening 84 b).

Thus, during the third period T3, an alignment adjustment is carried outon the basis of the difference in the intensity of reflection. Thismakes it possible to achieve, during a fifth period T5 in which thealignment markers 221 can next be observed again through the firstopening 84 a and the second opening 84 b, the state in which thereflection intensity IR1 is equal to the reflection intensity IR2 as inthe first period T1.

The fifth period T5 indicates that, as in the first period T1, thealignment is correct between the alignment markers 221 and the alignmentmarkers 84 (that is, the first opening 84 a and the second opening 84b).

During (i) a fourth period T4 between the third period T3 and the fifthperiod T5 and (ii) a sixth period T6 between the fifth period T5 and aseventh period T7, the reflection intensities IR1 and IR2 are both lowas in the second period T2 since the alignment markers 221 are far fromthe first opening 84 a and the second opening 84 b.

The following seventh period T7 indicates an increase in each of thereflection intensities IR1 and IR2 because the alignment markers 221 canbe observed again through the first opening 84 a and the second opening84 b.

The seventh period T7, however, indicates that the reflection intensityIR1 is higher than the reflection intensity IR2. This specificallyindicates that (i) an area of an alignment marker 221 which area isexposed through the first opening 84 a is larger than an area of analignment marker 221 which area is exposed through the second opening 84b and that (ii) an alignment marker 221 is deviated to the first opening84 a side.

Thus, during the seventh period T7, an alignment adjustment is carriedout on the basis of the difference in the intensity of reflection. Thismakes it possible to achieve, during a period in which the alignmentmarkers 221 can next be observed again through the first opening 84 aand the second opening 84 b, the state in which the reflection intensityIR1 is equal to the reflection intensity IR2.

The present embodiment, as described above, (i) measures the reflectionintensity that changes with the elapse of the scanning period, and (ii)can thus, in real time, detect mispositioning between the alignmentmarkers 83 and the alignment markers 221 while scanning a substrate(that is, carrying a substrate).

Further, in the case where there are provided, as described above, aplurality of mask openings as the alignment markers 84 along thesubstrate scanning direction, it is possible to determine, on the basisof the difference between reflection intensities obtained from therespective mask openings, the side to which an alignment marker 221 asdeviated from a mask opening.

Thus, providing a plurality of alignment markers 84 along the scanningdirection as described above further makes it possible to observemispositioning (θ mispositioning) along the rotation direction betweenthe shadow mask 81 and the film formation substrate 200.

Thus, in the case where, as illustrated in FIG. 39, (i) the shadow mask81 in use has a long side 81 a with a width that is larger than thewidth of a side (that is, a long side 210 a) of the vapor depositionregion 210 of the film formation substrate 200 which side faces eachlong side 81 a of the shadow mask 81 and (ii) the film formationsubstrate 200 is scanned along a side (that is, a short side 210 a)perpendicular to the above side (that is, the long side 210 a) of thefilm formation substrate 200, even if the alignment markers 221 areprovided on only one of the two sides (that is, the short sides 210 aand 210 a) parallel to the scanning direction, it is possible to correctthe misalignment, including θ mispositioning, by adjusting the alignmentso that the respective reflection intensities obtained from the maskopenings are equal to each other as described above. This arrangementmakes it possible to carry out an alignment correctly.

In the case where, as illustrated in FIG. 39, the alignment markers 84and 221 are provided on both end sides of the vapor deposition region210 of the film formation substrate 200 (that is, on both sidesjuxtaposed along the direction perpendicular to the substrate scanningdirection), it is possible to determine not only the amount of scanningthe film formation substrate 200 but also θ mispositioning in alignmentregardless of whether there are provided a plurality of alignmentmarkers 84 along the scanning direction as described above.

The following describes a method for determining θ mispositioning inalignment on the basis of alignment markers 84 and 221 provided, asdescribed above, on both end sides of the vapor deposition region 210 ofthe film formation substrate 200.

FIG. 44 is a graph illustrating a relation between the intensity ofreflection and a period of scanning the film formation substrate 200,the relation being observed after introduction of the film formationsubstrate 200 (that is, after the start of a substrate scan).

FIG. 44 illustrates IR and IL, which indicate the intensities ofreflection from respective alignment markers 221 and 221 so provided onrespective end sides of the vapor deposition region 210 of the filmformation substrate 200 as to be opposite to each other, the intensitieshaving been measured with use of alignment markers 84 and 84 (maskopenings) so provided, as illustrated in FIG. 39, as to be opposite toeach other along the direction perpendicular to the scanning directionof the shadow mask 81.

The graph of FIG. 44 illustrates a signal produced from the reflectionintensity IR which signal rises first during an initial period T0, whichextends from the introduction of the substrate until the end of acertain length of time. This indicates that (i) the alignment marker 221from which the reflection intensity IR has been obtained has beendetected earlier than the alignment marker 221 from which the intensityof reflection IL has been obtained, and that (ii) the alignment marker221 from the reflection intensity IR has been obtained is located aheadof the alignment marker 221 from which the intensity of reflection ILhas been obtained. In other words, the above indicates that there hasoccurred θ mispositioning (undesired shift in rotation) in the alignmentbetween the film formation substrate 200 and the shadow mask 81.

Under such circumstances, it is possible to correct the position of thefilm formation substrate 200 during the initial period T0 by, forexample, causing, as described above, the substrate drive controlsection 234 to (i) drive the motor 72, such as an XY θ drive motor, thatis connected to the substrate holding member 71 and thus (ii) move(rotate) the substrate holding member 71 along a θ direction to in turnmove (rotate) the film formation substrate 200 along the θ direction.This arrangement makes it possible to correct the θ mispositioning.

The present embodiment is arranged such that, as illustrated in (a) and(b) of FIG. 42, the alignment markers 221 are provided discontinuouslyand that, as illustrated in FIG. 43, the intensity of reflection changesdiscontinuously as well.

Thus, counting cycles of the above change makes it possible toaccurately determine (monitor) the amount of scanning the film formationsubstrate 200.

The above arrangement in turn makes it possible to more accuratelycontrol, for example, the timing of opening and closing the shutter 89,and consequently carry out vapor deposition with higher accuracy.

In (a) and (b) of FIG. 42, the discontinuous cycle (formation cycle) ofthe alignment markers 221 is fixed. The present embodiment is, however,not limited to such an arrangement. It is possible to more accuratelydetermine the position of the film formation substrate 200 (that is, thescan amount) in a case where, for example, the discontinuous cycle(formation cycle) of the alignment markers 221 is intentionally variedaccording to the position in the film formation substrate 200, forexample, the width of the discontinuation of the alignment markers 221is varied, as illustrated in FIG. 45, from d11 to d12 according to theposition in the film formation substrate 200.

Further, it is possible to more accurately determine the position of thefilm formation substrate 200 (that is, the scan amount) in a case wherethe shape of the alignment markers 221 is varied according to theposition in the film formation substrate 200 either instead of or incombination with varying, as described above, the discontinuous cycle(formation cycle) of the alignment markers 221 according to the positionin the film formation substrate 200.

The following describes, mainly with reference to FIG. 41, a process(film thickness control) carried out by the vapor deposition device 50for film thickness adjustment. The description below deals with anexample case in which the film thickness sensor 180 is a sensor formeasuring the intensity of reflection from an object (that is, the vapordeposition film 211). The present embodiment is, however, not limited tosuch an arrangement.

While the method itself for detecting a film thickness varies accordingto the kind of sensor in use, the process itself of film thicknessadjustment is basically identical. The method for detecting a filmthickness may, in the case where, for example, a commercially availablesensor is used, simply be a method that meets the specifications of sucha sensor. The present embodiment thus omits a detailed descriptionthereof. The present embodiment is, however, readily implementable evenin a case where another sensor is used.

The same explanation applies, of course, to the above-describedalignment sensor 170 as well.

As illustrated in FIG. 41, the control circuit 230 includes, each as afilm thickness control section: a film thickness difference amountcalculating section 251 (computing section); a correction amountcalculating section 252 (computing section); a mask drive controlsection 233; a substrate drive control section 234; and a vapordeposition control section 253.

The film thickness difference amount calculating section 251 calculatesthe amount of difference in film thickness from the difference between(i) the reflection intensity detected by the film thickness sensor 180and (ii) a reflection intensity for a film thickness set in advance. Thefilm thickness difference amount calculating section then transmits aresult of the calculation to the correction amount calculating section252.

The correction amount calculating section 252, from the calculationresult received from the film thickness difference amount calculatingsection 251, calculates, for example, (i) the amount of correction tothe speed of scanning the film formation substrate 200 or the mask unit80 or the amount of correction to the number of vapor depositionoperations for the film formation substrate 200 or the mask unit 80, and(ii) the amount of correction to the temperature of the vapor depositionsource 85. The correction amount calculating section then transmits aresult of the calculation to the mask drive control section 233, thesubstrate drive control section 234, and the vapor deposition controlsection 253 in the form of a correction signal.

In the case where the mask unit 80 is moved relative to the filmformation substrate 200, the mask drive control section 233 (i) on thebasis of the correction signal from the correction amount calculatingsection 252, corrects (adjusts), for example, the number of rotations ofthe motor 241, such as an XY θ drive motor, included in the mask unitmoving mechanism (mask unit moving means) 240 connected to the mask unit80, and thus (ii) corrects (adjusts) the speed of scanning the mask unit80. Alternatively, the mask drive control section, on the basis of thecorrection signal from the correction amount calculating section 252,drives the motor 241 to correct (adjust) the number of vapor depositionoperations.

In the case where the film formation substrate 200 is moved relative tothe mask unit 80, the substrate drive control section 234 (i) on thebasis of the correction signal from the correction amount calculatingsection 252, corrects (adjusts), for example, the number of rotations ofthe motor 72, such as an XY θ drive motor, that is included in thesubstrate moving mechanism 70 and that is connected to the substrateholding member 71, and thus (ii) corrects (adjusts) the speed ofscanning the film formation substrate 200. Alternatively, the substratedrive control section, on the basis of the correction signal from thecorrection amount calculating section 252, drives the motor 72 tocorrect (adjust) the number of vapor deposition operations.

The vapor deposition control section 253 (i) on the basis of thecorrection signal from the correction amount calculating section 252,drives, for example, heating means, such as a heater 260, included inthe vapor deposition source 85 and thus (ii) adjusts the temperature ofthe vapor deposition source 85.

As described above, the present embodiment, for example, (i) derives acorrection value for a difference in film thickness from the amount ofan actual difference included in a vapor deposition film 211 formed onthe film formation substrate 200, and (ii) on the basis of thecorrection value, adjusts (controls) the film thickness of a vapordeposition film 211 to be deposited onto the film formation substrate200.

FIG. 37 illustrates an example in which (i) the substrate movingmechanism 70 is a roller-type moving mechanism including, for example, asubstrate holding member 71 having the shape of a frame and (ii) thefilm formation substrate 200 is moved relative to the mask unit 80.

The present embodiment is, however, not limited to such an arrangement.The present embodiment may alternatively be arranged, for example, suchthat, as described above, (i) a hydraulic moving mechanism is used and(ii) the film formation substrate 200 is moved relative to the mask unit80. The present embodiment may further alternatively by arranged, asillustrated in FIG. 1, such that (i) the substrate holding member 71includes an electrostatic chuck provided on a surface of the filmformation substrate 200 which surface is opposite to a surface thatfaces the mask unit 80 and (ii) the film formation substrate 200 ismoved in a state in which the film formation substrate 200 is adhered tothe electrostatic chuck.

Further, the present embodiment may, of course, be arranged such that,as described above, the mask unit 80 is moved relative to the filmformation substrate 200 with use of the mask drive control section 233.In this case, the present embodiment may be arranged such that (i) thefilm formation substrate 200 is fixed and only the mask unit 80 is movedor that (ii) both the film formation substrate 200 and the mask unit 80are moved relative to each other.

The present embodiment can, as described above, while carrying out vapordeposition and a scan, carry out an alignment between the shadow mask 81and the film formation substrate 200 in real time. The presentembodiment can thus carry out a more accurate alignment. Further, thepresent embodiment, which eliminates the need to stop a scan for analignment, can form a vapor deposition film 211 with higher efficiency.The present embodiment consequently makes it possible to produce afinished product with higher efficiency.

The present embodiment, as described above, only requires simplealignment markers 84 to be provided on the film formation substrate 200,and thus does not affect efficiency of use of the film formationsubstrate 200.

The present embodiment, instead of recognizing a pattern, uses laserlight and monitors the intensity of reflection of the laser light. Thepresent embodiment thus eliminates the need to include a complicatedarithmetic unit and causes no occurrence of, for example, a recognitionerror. The present embodiment can consequently carry out a stablealignment more accurately with a simple device.

The present embodiment is characterized in that, as described above, itcontinuously measures the positional relationship between (i) thealignment markers 221 (alignment pattern) provided to the film formationsubstrate 200 in advance and (ii) the alignment markers 84 (alignmentpattern) provided to the shadow mask 81, and thus determines the amountof a misalignment so as to carry out an alignment operationcontinuously. The present embodiment is not limited to theabove-described examples as long as it has the above characteristic.

The present embodiment describes an example case in which, fordetermination of the amount of movement of the film formation substrate200 and the shadow mask 81 relative to each other, the correction amountcalculating section 232 calculates the amount of alignment correctionand the amount of substrate scan correction from a detection resultreceived from the detecting section 231. The present embodiment is,however, not limited to such an arrangement. The present embodiment mayalternatively be arranged to, for example, determine a correction valuefor a substrate position of the film formation substrate 200 from theamount of positional difference between the alignment markers 221 andthe alignment markers 84 with reference to a lookup table stored inadvance in a storage section (storage means).

More specifically, the control circuit 200 may include: a storagesection in which the lookup table is stored; and a selecting section forselecting (determining) a correction value for a substrate position ofthe film formation substrate 200 on the basis of the amount ofpositional difference between the alignment markers 221 and thealignment markers 84 with reference to the lookup table.

The present embodiment describes an example case in which the alignmentsensor 170 is an optical sensor as described above. The alignment sensor170 may, however, be a sensor other than an optical sensor as describedabove.

The present embodiment describes an example case in which the filmthickness sensor 180 measures the film thickness of a vapor depositionfilm 211 actually deposited on the film formation substrate 200, andthus controls the film thickness of the vapor deposition film 211 to beformed on the film formation substrate 200.

The present embodiment is, however, not limited to such an arrangement.The present embodiment may alternatively be arranged to (i) calculate,from a change in resonance frequency of a quartz oscillator, the mass ofa film formation material adhered to a surface of the quartz oscillatorwhich surface serves to detect a film thickness, and (ii) convert, withuse of a correction factor or the like stored in advance in the storagesection, the amount of the film formation material, adhered to the abovesurface of the quartz oscillator, into the thickness of a film on thefilm formation substrate 200 so as to compare this thickness with a setfilm thickness.

The film thickness of the vapor deposition film 211 may be controlled insuch a manner that (i) when vapor deposition particles released from thevapor deposition source 85 are deposited onto the film formationsubstrate 200, the film thickness sensor 180 detects, with use of aplurality of quartz oscillators, the density distribution forevaporation in a flow released from the vapor deposition source 85 andthat (ii) the distance between the mask unit 80 and the film formationsubstrate 200 is adjusted in accordance with a gradient of the densitydistribution with use of, for example, and XYZ θ stage.

In a case where, for example, the film formation substrate 200 is a TFTsubstrate 10 or the like, as in Embodiment 1 above, the above alignmentcontrol (mask alignment process) is unnecessary for a layer to bedeposited onto the entire surface of the film formation substrate. Theabove active control of a film thickness is, however, preferably carriedout with respect to such a layer as well.

Embodiment 13

The present embodiment is described below mainly with reference to FIG.46, and (a) and (b) of FIG. 47.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 12 (particularly, Embodiment 12)above. Constituent elements of the present embodiment that are identicalin function to their respective equivalents described in Embodiments 1through 12 are each assigned the same reference numeral, and are notdescribed here.

Embodiment 12 above mainly describes an example case in which thealignment sensor 170 is a sensor for measuring the intensity ofreflection of laser light. The alignment sensor 170 is, however, notlimited to such a sensor, and may thus be, as described above, an imagesensor including an image sensing element such as a CCD.

The vapor deposition device 50 of the present embodiment in differentfrom those of Embodiments 1 through 12 above in that, as in Embodiment12 above, the alignment sensor 170 (image sensor) is so provided in thevacuum chamber 60 as to be adjacent to the shadow mask 81 and the vapordeposition source 85 (that is, at such a position that the alignmentsensor is next to the shadow mask and the vapor deposition source) andthat the alignment sensor is fixed in position relative to the shadowmask 81.

FIG. 46 is a block diagram partially illustrating a configuration of thevapor deposition device 50 of the present embodiment.

The vapor deposition device 50 of the present embodiment includes, as acontrol circuit, a control circuit 230 having (i) the configurationillustrated in FIG. 46 and (ii) that illustrated in FIG. 41 referred toabove. The configuration illustrated in FIG. 41 is identical to thatdescribed in Embodiment 12 above. The present embodiment thus omits sucha description.

As illustrated in FIG. 46, the control circuit 230 includes, each as analignment control section: an image detecting section 271; a detectingsection 272 (difference detecting section; computing section); acorrection amount calculating section 232 (computing section); a maskdrive control section 233; a substrate drive control section 234; avapor deposition ON/OFF control section 273; and a shutter drive controlsection 236.

In the present embodiment, (i) the detecting section 272 and thecorrection amount calculating section 232 correspond to the computingsection 102 in FIG. 4, (ii) the image detecting section 271 correspondsto the image detecting section 101 in FIG. 4, (iii) the detectingsection 272 corresponds to the detecting section 231 in FIG. 40, and(iv) the vapor deposition ON/OFF control section 273 corresponds to thevapor deposition ON/OFF control section 104 in FIG. 4 and to the vapordeposition ON/OFF control section 235 in FIG. 40.

The description below deals, for FIG. 46, with only the image detectingsection 271, the detecting section 272, and the vapor deposition ON/OFFcontrol section 273. For the other constituent elements, Embodiment 12above is to be referred to by, for example, replacing (i) the detectingsection 231 with the detecting section 272 and (ii) the vapor depositionON/OFF control section 235 with the vapor deposition ON/OFF controlsection 273.

In the case where the alignment sensor 170 is an image sensor, the imagedetecting section 271 first, as illustrated in FIG. 46, detects, from animage captured by the alignment sensor 170 (image sensor), respectiveimages of (i) the alignment markers 221 provided to the film formationsubstrate 200 and (ii) the alignment markers 84 of the shadow mask 81.The image detecting section further detects the start-end and rear-endof the vapor deposition region 210 of the film formation substrate 200on the basis of, among the alignment markers 221 provided to the filmformation substrate 200, (i) a start-end marker indicative of thestart-end of the vapor deposition region 210 and (ii) a rear-end markerindicative of the rear-end of the vapor deposition region 210.

The detecting section 272 uses, as a detection signal of the alignmentsensor 170, the images detected by the image detecting section 271, andthus detects (as a difference) (i) the amount of positional difference(that is, a shift component along the x axis direction and the y axisdirection, and a rotation component on the x-y plane) between thealignment markers 221 and the alignment markers 84 and (iii) the amountof scanning the film formation substrate 200. The detecting section thentransmits a result of the detection to the correction amount calculatingsection 232.

The vapor deposition ON/OFF control section 273 (i) generates a vapordeposition OFF signal when the image detecting section 271 has detectedthe rear-end of the vapor deposition region 210, and (ii) generates avapor deposition ON signal when the image detecting section 271 hasdetected the start-end of the vapor deposition region 210.

The following describes a method for determining the amount ofmisalignment in the case where the alignment sensor 170 is an imagesensor as described above.

(a) of FIG. 47 is a plan view schematically illustrating an arrangementof a main part of the alignment marker section 220 illustrated in FIG.39. (b) of FIG. 47 is a plan view illustrating a positional relationshipbetween (i) the individual alignment markers 221 making up an alignmentpattern of the alignment marker section 220 illustrated in (a) of FIG.47 and (ii) alignment markers 84 of the shadow mask 81. (b) of FIG. 47illustrates only alignment markers 84 for the shadow mask 81 and omitsthe shadow mask 81 itself for convenience of illustration.

The alignment markers 84, as described above, each include an opening(mask opening) provided in an alignment marker section 83 of the shadowmask 81.

In the present embodiment as well as the embodiments above, thealignment markers 221 can be made of, for example, a reflective material(high reflective member) such as an electrode material used in, forexample, the TFT substrate 10. Thus, the alignment markers 221 can be(i) formed during an electrode forming step for forming, for example,gate electrodes, source electrodes, and drain electrodes of the filmformation substrate 200 such as the TFT substrate 10 and (ii) made ofthe material of which the above electrodes are made.

The present embodiment, as illustrated in (b) of FIG. 47, capturesrespective images of an alignment marker 221 and an alignment marker 84(mask opening), and measures the distance between respective ends (outeredges) of the alignment markers 84 and 221 to determine the amount ofmisalignment between the substrate and the mask.

The example of (b) of FIG. 47 illustrates only the distance q betweenthe respective ends of alignment markers 84 and 221. However, asdescribed in Embodiment 1 above with reference to (a) through (d) ofFIG. 5, the detecting section 231 serving as a computing sectionmeasures (determines), on the basis of the respective images of thealignment markers 84 and 221, the images having been detected by theimage detecting section 271, (i) the distance r between respective ends(outer edges) of the alignment markers 84 and 221 along the x axisdirection and (ii) the distance q between the respective ends (outeredges) of the alignment markers 84 and 2221 along the y axis direction,to calculate the amount of misalignment.

In this case also, in a case where (i) a plurality of alignment markers84 are provided along the scanning direction or (ii) the alignmentmarkers 84 and 221 are provided on both end sides of the vapordeposition region 210 of the film formation substrate 200, it is alsopossible to observe, not only the amount of scanning the film formationsubstrate 200, but also mispositioning (θ misposition(ing) along therotation direction between the shadow mask 81 and the film formationsubstrate 200.

In the present embodiment as well as the embodiments above, thealignment markers 221 are provided discontinuously as illustrated in (a)and (b) of FIG. 47. This arrangement makes it possible to (i) correctlydetermine (monitor) the amount of scanning the film formation substrate200, and (ii) more accurately control, for example, the timing ofopening and closing the shutter 89.

In the present embodiment as well as the embodiments above, it ispossible to, while carrying out vapor deposition and a scan, align theshadow mask 81 and the film formation substrate 200 with each other inreal time in the case where, as described above, (i) the alignmentsensor 170 serving as alignment observing means and fixed in positionrelative to the shadow mask 81 is so provided as to be adjacent to theshadow mask 81 and the vapor deposition source 85 and (ii) the alignmentsensor 170 continues to monitor (recognize) the alignment markers 221(alignment pattern), provided along the scanning direction of the filmformation substrate 200, through mask openings of the shadow mask 81throughout a vapor deposition period. This arrangement makes it possibleto carry out a more accurate alignment.

Further, the present embodiment, which eliminates the need to stop ascan for an alignment, can form a vapor deposition film 211 with higherefficiency. The present embodiment consequently makes it possible toproduce a finished product with higher efficiency.

Embodiment 14

The present embodiment is described below mainly with reference to FIGS.48 through 50.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 13 (particularly, Embodiment 12)above. Constituent elements of the present embodiment that are identicalin function to their respective equivalents described in Embodiments 1through 13 are each assigned the same reference numeral, and are notdescribed here.

Embodiments 1 through 13 above each describe an example case in whichthe film formation substrate 200 is observed through the shadow mask 81.More specifically, Embodiments 1 through 13 above each describe a caseof measuring mispositioning between (i) an alignment pattern (forexample, alignment markers 84) provided to the film formation substrate200 in advance and (ii) an alignment pattern (for example, alignmentmarkers 221) provided to the shadow mask 81, and thus controllingmispositioning of the vapor deposition film 211 (that is, a vapordeposition pattern) on the basis of the amount of misalignment betweenthe film formation substrate 200 and the shadow mask 81.

The present embodiment, in contrast, measures the amount of positionaldifference between (i) an alignment pattern provided to the filmformation substrate 200 in advance and (ii) a vapor deposition film 211(that is, a vapor deposition pattern) actually formed, and thus directlyobserves and controls mispositioning of the vapor deposition film 211(that is, a vapor deposition pattern).

FIG. 48 is a cross-sectional view schematically illustrating aconfiguration of a main part of the vapor deposition device 50 of thepresent embodiment. FIG. 49 is a block diagram partially illustrating aconfiguration of the vapor deposition device 50 illustrated in FIG. 48.

The vapor deposition device 50 of the present embodiment, as illustratedin FIG. 48, includes: a vacuum chamber 60 (film growing chamber); asubstrate moving mechanism 70 (substrate moving means; moving means); amask unit 80; an alignment sensor 190 (not illustrated in FIG. 48; seeFIGS. 37 through 40; film thickness observing means); and a controlcircuit 280.

The vapor deposition device 50 of the present embodiment is, as well asthose of the embodiments above, arranged such that the alignment sensor190 serving as alignment observing means is so provided in the vacuumchamber 60 as to be adjacent to the shadow mask 81 and the vapordeposition source 85 (that is, at such a position that the alignmentsensor is next to the shadow mask and the vapor deposition source) andthat the alignment sensor is fixed in position relative to the shadowmask 81.

The alignment sensor 190 of the present embodiment, as illustrated inFIG. 48, includes: an ultraviolet light emitting device 191 (ultravioletlight emitting section); and a detector 192 (detecting section).

The ultraviolet light emitting device 191 and the detector 192 are soprovided, as illustrated in FIG. 48, as to sandwich the film formationsubstrate 200 and be opposite to each other. The ultraviolet lightemitting device 191 is provided on a side of the film formationsubstrate 200 which side is opposite to a vapor deposition surfacethereof.

The vapor deposition device 50 of the present embodiment is arrangedsuch that the alignment sensor 190 is provided further downstream in thesubstrate scanning direction (that is, on the downstream side of thesubstrate scanning direction) than the respective alignment sensors 170of Embodiments 12 and 13 above. With this arrangement, the presentembodiment, instead of observing the film formation substrate 200through the shadow mask 81 as in Embodiments 12 and 13 above, directlyobserves the film formation substrate 200 that has just passed theshadow mask 81.

The present embodiment is arranged such that the alignment sensor 190 isfixed in position relative to the shadow mask 81, and can thus, whilecarrying out vapor deposition and a scan, (i) observe an alignmentpattern provided along the scanning direction of the film formationsubstrate 200 and a vapor deposition film 211 on the film formationsubstrate 200 that has passed the shadow mask 81 and (ii) on the basisof a result of the observation, carry out an alignment between theshadow mask 81 and the film formation substrate 200.

The alignment sensor 190 is, as with the film thickness sensor 180,desirably provided at a position that is as close as possible to theshadow mask 81 and the vapor deposition source 85. This arrangementmakes it possible to observe a vapor deposition film 211 on the filmformation substrate 200 that has just passed the shadow mask 81.

The following describes, with reference to (a) through (c) of FIG. 50, amethod for determining the amount of misalignment with use of thealignment sensor 190.

(a) through (c) of FIG. 50 are each a plan view illustrating a methodfor measuring the amount of misalignment on the basis of a relationbetween (i) an alignment marker provided to the film formation substrate200 in advance and (ii) a vapor deposition pattern actually deposited onthe film formation substrate 200.

(a) of FIG. 50 illustrates an example shape of an alignment markerprovided to the film formation substrate 200. (b) of FIG. 50 illustratesa positional relationship, observed in a case where there has occurredmisalignment, between (i) the alignment marker illustrated in (a) ofFIG. 50 and (ii) a vapor deposition pattern actually deposited on thefilm formation substrate 200. (c) of FIG. 50 illustrates a positionalrelationship, observed in a case where there has occurred nomisalignment, between (i) the alignment marker illustrated in (a) ofFIG. 50 and (ii) a vapor deposition pattern actually deposited on thefilm formation substrate 200.

As illustrated in (a) through (c) of FIG. 50, the present embodimentincludes, inside the vapor deposition region 210 of the film formationsubstrate 200, an alignment marker 222 for an alignment between theshadow mask 81 and the film formation substrate 200.

The present embodiment, as described above, uses the alignment sensor190 to measure a positional relationship between (i) a vapor depositionpattern of the vapor deposition film 211 actually deposited on the filmformation substrate 200 and (ii) the alignment marker 222 provided onthe film formation substrate 200 in advance. The vapor depositionpattern is, for example, an organic layer pattern of an organic EL layeror the like.

In the present embodiment, the alignment marker 222 is not particularlylimited in terms of material as long as it is possible to observe (i)photoluminescence by a vapor deposition film 211 and (ii) the alignmentmarker 222. In the present embodiment, the alignment marker 222 ispreferably made of a material that reflects or absorbs ultraviolet lightor is more preferably made of a material that transmits no ultravioletlight. This arrangement makes it possible to observe photoluminesence bya vapor deposition film 211 and the alignment marker 222 with goodcontrast.

Thus, in the case where the film formation substrate 200 is a TFTsubstrate 10, the alignment marker 222 is made of, for example, anelectrode material, such as Al that is used in preparation of the TFTsubstrate 10.

The alignment marker 222 can be made of a material identical to anelectrode material used to, for example, the TFT substrate 10. Thus, thealignment marker 222 can be (i) formed during an electrode forming stepfor forming, for example, gate electrodes, source electrodes, and drainelectrodes of the film formation substrate 200 such as the TFT substrate10 and (ii) made of the material of which the above electrodes are made.

In the case where the film formation substrate 200 is, for example, awiring board (electrode substrate; array substrate) such as a TFTsubstrate 10, the alignment marker 222 may be provided in a region otherthan the region of the wire, or the wire may itself be used as thealignment marker 222. This arrangement makes it possible to avoid, forexample, the problem of an increase in the number of steps whichincrease arises from providing the alignment markers 222 to the filmformation substrate 200 and the problem of a cost increase due to, forexample, use of another material.

The present embodiment is, however, not limited to the abovearrangement. It is alternatively possible to, for example, provide, on asurface of the film formation substrate 200 which surface (substrateback surface) is opposite to a vapor deposition surface thereof, aseparate alignment marker 222 made of a material that reflects orabsorbs ultraviolet light or preferably a material that transmits noultraviolet light.

The alignment marker 222 (alignment pattern) of the film formationsubstrate 200 is surrounded by a region made of a material that cantransmit ultraviolet light. In a case where the alignment marker 222 ismade of a material that partially transmits ultraviolet light (that is,that does not completely block ultraviolet light), the regionsurrounding the alignment marker 222 of the film formation substrate 200is preferably made of a material that is higher in transmittance forultraviolet light then the alignment marker 222.

As illustrated in (c) of FIG. 50, the present embodiment forms a vapordeposition film 211 with use of the shadow mask 81 during a vapordeposition step in such a manner that the vapor deposition film 211overlaps the alignment marker 222. The alignment marker 222 is formed inadvance in a region of the film formation substrate 200 on which regiona vapor deposition pattern of the vapor deposition film 211 is to beformed.

Immediately after the film formation substrate 200 passes the shadowmask 81 (that is, immediately after vapor deposition), the ultravioletlight emitting device 191 emits ultraviolet light to the surface of thefilm formation substrate 200 which surface (substrate back surface) isopposite to the vapor deposition surface thereof. This causes a regionon which an organic layer has been deposited to exhibit PL(photoluminesence).

The detector 192 included in the alignment sensor 190 thus, illustratedin (b) and (c) of FIG. 50, simultaneously observes (i) the non-emissivealignment marker 221 and (ii) the vapor deposition pattern of the vapordeposition film 211 that is emitting light.

The above arrangement makes it possible to control the alignment by (i)recognizing an image observed by the detector 192 and thus (ii) derivingthe amount of misalignment.

The vapor deposition device 50 of the present embodiment includes, as acontrol circuit, a control circuit 280 having (i) the configurationillustrated in FIG. 49 and (ii) that illustrated in FIG. 41 referred toabove. The configuration illustrated in FIG. 41 is identical to thatdescribed in Embodiment 12 above. The present embodiment thus omits sucha description.

As illustrated in FIG. 49, the control circuit 280 includes, each as analignment control section: an image detecting section 281; a detectingsection 282 (difference detecting section; computing section); acorrection amount calculating section 232 (computing section); a maskdrive control section 233; a substrate drive control section 234; avapor deposition ON/OFF control section 283; and a shatter drive controlsection 236.

In the present embodiment, (i) the detecting section 282 and thecorrection amount calculating section 232 correspond to the computingsection 102 in FIG. 4, (ii) the image detecting section 281 correspondsto the image detecting section 101 in FIG. 4, (iii) the detectingsection 282 corresponds to the detecting section 231 in FIG. 40, and(iv) the vapor deposition ON/OFF control section 283 corresponds to thevapor deposition ON/OFF control section 235 in FIG. 40.

The description below deals, for FIG. 49, with only the image detectingsection 281, the detecting section 282, and the vapor deposition ON/OFFcontrol section 283. For the other constituent elements, Embodiment 12above is to be referred to by, for example, replacing (i) the detectingsection 231 with the detecting section 282 and (ii) the vapor depositionON/OFF control section 235 with the vapor deposition ON/OFF controlsection 283.

The present embodiment is arranged as follows: As illustrated in FIG.49, the image detecting section 281 first, on the basis of an imagecaptured by the detector 192 included in the alignment sensor 190,detects (recognizes) respective images of the non-emissive alignmentmarker 222 and the vapor deposition film 211 that is emitting light. Theimage detecting section further detects the start-end and rear-end ofthe vapor deposition region 210 of the film formation substrate 200 onthe basis of (i) a start-end marker provided to the film formationsubstrate 200 and indicative of the start-end of the vapor depositionregion 210 and (ii) a rear-end marker provided to the film formationsubstrate 200 and indicative of the rear-end of the vapor depositionregion 210.

The alignment sensor 190, which is designed to detect an image of anactually deposited vapor deposition film 211, is provided furtherdownstream in the substrate scanning direction than the shadow mask 81.Thus, the start-end marker is provided separately from the alignmentmarker 222 at a position that is further upstream in the substratescanning direction than the vapor deposition region 210 of the filmformation substrate 200. The rear-end marker is provided (i) inside thevapor deposition region 210 of the film formation substrate 200 and (ii)at a position that is further upstream in the substrate scanningdirection than the rear-end of the vapor deposition region 210 of thefilm formation substrate 200.

The rear-end of the vapor deposition region 210 may alternatively bedetermined on the basis of a substrate scan amount detected by thedetecting section 282, and is thus not necessarily required.

The detecting section 282 calculates, from the respective images of thealignment marker 222 and the vapor deposition film 211 which images havebeen detected by the image detecting section 281, (i) the distance R(corresponding to the distance r above) between respective ends (outeredges) of the alignment marker 222 and the vapor deposition film 211along the x axis direction and (ii) the distance Q (corresponding to thedistance q above) between respective ends (outer edges) of the alignmentmarker 222 and the vapor deposition film 211 along the y axis direction.

The detecting section 282 compares the above-calculated distances R andQ with respective values set in advance (that is, (i) the distancebetween the respective ends of the alignment marker 222 and the vapordeposition film 211 along the x axis direction and (ii) the distancebetween the respective ends of the alignment marker 222 and the vapordeposition film 211 along the y axis direction, the distancescorresponding respectively to the distances R and Q and being observedin the case where there has occurred no misalignment as illustrated in(c) of FIG. 50. This arrangement makes it possible to detect (i) theamount of positional difference between the alignment marker 222 and theactually formed vapor deposition film 211 and (ii) the amount ofscanning the film formation substrate 200.

In the case where there are provided a plurality of alignment sensors190 along the scanning direction or along the direction perpendicular tothe scanning direction so that the plurality of alignment sensors 190observe the alignment marker 222 and the vapor deposition film 211 in aplurality of regions simultaneously, it is possible to observe, not onlythe amount of scanning the film formation substrate 200, but alsomispositioning (θ mispositioning) along a rotation direction between theshadow mask 81 and the film formation substrate 200.

The detecting section 282 transmits, to the correction amountcalculating section 232, (i) the above-detected amount of positiondifference (that is, a shift component along the x axis direction andthe y axis direction, and a rotation component on the x-y plane) betweenthe alignment marker 222 and the actually formed vapor deposition film211 and (ii) the above-detected amount of scanning the film formationsubstrate 200.

The vapor deposition ON/OFF control section 283 (i) generates a vapordeposition OFF signal when the image detecting section 281 has detectedthe rear-end of the vapor deposition region 210, and (ii) generates avapor deposition ON signal when the image detecting section 281 hasdetected the start-end of the vapor deposition region 210.

In the present embodiment, it is possible to, while carrying out vapordeposition and a scan, align the alignment marker 222 with the vapordeposition film 221, actually deposited on the film formation substrate200, with each other in real time in the case where, as described above,(i) the alignment sensor 190 serving as alignment observing means andfixed in position relative to the shadow mask 81 is so provided as to beadjacent to the shadow mask 81 and the vapor deposition source 85 and(ii) the alignment sensor 190 continues to monitor (recognize),throughout a vapor deposition period, the positional relationshipbetween the alignment marker 222 (alignment pattern), provided to thefilm formation substrate 200, and the vapor deposition film 211,actually deposited on the film formation substrate 200. Further, in thecase where an alignment is carried out in real time between (i) thealignment marker 222 and (ii) the vapor deposition film 211 actuallydeposited on the film formation substrate 200, it is possible in turn toalign the shadow mask 81 and the film formation substrate 200 with eachother in real time. This arrangement makes it possible to carry out amore accurate alignment.

Further, the present embodiment, which eliminates the need to stop ascan for an alignment, can form a vapor deposition film 211 with higherefficiency. The present embodiment consequently makes it possible toproduce a finished product with higher efficiency.

The present embodiment does not carry out an alignment operation withuse of alignment markers 84 and 221 provided respectively to the shadowmask 81 and the film formation substrate 200, but, as described above,directly determines mispositioning of a vapor deposition film 211actually deposited on the film formation substrate 200. The presentembodiment can thus carry out a more accurate alignment.

The present embodiment describes an example case in which, as describedabove, (i) the alignment sensor 190 is so provided in the vacuum chamber60 as to be adjacent to the shadow mask 81 and the vapor depositionsource 85 (that is, at such a position that the alignment sensor is nextto the shadow mask and (ii) the vapor deposition source) and thealignment sensor is fixed in position relative to the shadow mask 81.

The present embodiment is, however, not limited to such an arrangement.The alignment sensor 190 is thus not necessarily fixed in positionrelative to the shadow mask 81.

As described above, accuracy in image recognition is decreased in thecase where the alignment markers 84 and 221 are simultaneouslyrecognized from an image sensed by an image sensing element (imagesensing means), such as a CCD, that is attached to the vacuum chamber60.

In the case where, however, mispositioning of a vapor deposition film211 actually deposited on the film formation substrate 200 is directlydetermined as in the present embodiment, it is only necessary to be ableto observe the alignment marker 222 and the vapor deposition film 211both on the film formation substrate 200. It is thus unnecessary tosimultaneously observe (i) the alignment marker 84 provided to theshadow mask 81 and (ii) the alignment marker 222 provided to the filmformation substrate 200. This arrangement prevents the above-mentionedproblem of a decrease in recognition accuracy.

Thus, the alignment observing means is not necessarily fixed in positionrelative to the shadow mask 81, and may, for example, be an imagesensing element, such as a CCD, that is attached to the vacuum chamber60. The alignment observing means may alternatively include a pluralityof alignment observing means each fixed in position relative to the filmformation substrate 200.

The present embodiment carries out an alignment between the alignmentmarker 222 and the vapor deposition film 211 to align the shadow mask 81and the film formation substrate 200 with each other. The alignmentmarker 222 thus functions also as an alignment marker for an alignmentbetween the shadow mask 81 and the film formation substrate 200.

In the present embodiment as well as the embodiments above, it ispreferable that the alignment observing means, as in Embodiments 1through 13 above, optically observe the respective relative positions of(i) the alignment marker 222 and (ii) the vapor deposition film with apredetermined pattern while making no contact with alignment marker 222or the vapor deposition film 211.

The alignment observing means, that is, means for observing thepositional relationship between (i) the alignment marker 222, providedto the film formation substrate 200 for an alignment between the shadowmask 81 and the film formation substrate 200, and (ii) the vapordeposition film 211 formed to have the predetermined pattern, can bealignment observing means for carrying out an optical observation suchas observation of photoluminesence light emission, observation of theintensity of reflection, observation of transmission intensity, andsimple image recognition.

The present embodiment is characterized in that, as described above, itdirectly determines mispositioning between (i) the alignment marker 222(alignment pattern) provided to the film formation substrate 200 inadvance and (ii) a vapor deposition pattern of the vapor deposition film211 actually formed. The present embodiment is not limited to theabove-described examples as long as it has the above characteristic.

Embodiment 15

The present embodiment is described below mainly with reference to FIGS.51 and 52.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 14 (particularly, Embodiment 14)above. Constituent elements of the present embodiment that are identicalin function to their respective equivalents described in Embodiments 1through 14 are each assigned the same reference numeral, and are notdescribed here.

As illustrated in (a) through (c) of FIG. 51, the present embodimentincludes, as the alignment marker 222, an alignment marker 222 insidethe vapor deposition region 210 of the film formation substrate 200, thealignment marker having a grid shape and including four openings 222 ainside itself (that is, inside a single alignment marker 222).

(a) of FIG. 51 of FIG. 51 illustrates an example shape of the alignmentmarker 222 provided to the film formation substrate 200. (b) of FIG. 51illustrates a positional relationship, observed in a case where therehas occurred misalignment, between (i) the alignment marker 222illustrated in (a) of FIG. 51 and (ii) a vapor deposition pattern of thevapor deposition film 211 actually deposited on the film formationsubstrate 200, (c) of FIG. 51 illustrates a positional relationship,observed in a case where there has occurred no misalignment, between (i)the alignment marker 222 illustrated in (a) of FIG. 51 and (ii) a vapordeposition pattern of the vapor deposition film 211 actually depositedon the film formation substrate 200.

As illustrated in (c) of FIG. 51, the present embodiment forms a vapordeposition film 211 with use of the shadow mask 81 during a vapordeposition step in such a manner that (i) the vapor deposition film 211has a central portion that is located at a central portion of thealignment marker 222 (that is, overlaps such a central portion), andthat (ii) the vapor deposition film 211 is exposed equally through thefour openings 22 a included in the alignment marker 222. The alignmentmarker 222 is formed in advance in a region of the film formationsubstrate 200 on which region a vapor deposition pattern of the vapordeposition film 211 is to be formed.

The present embodiment, which includes an alignment marker 222 havingthe above shape, does not carry out image recognition and insteadderives the amount of misalignment on the basis of the ratio betweenrespective fluorescence intensities for the four openings 222 a.

The vapor deposition device 50 and vapor deposition method of thepresent embodiment, as described above, each use (i) an alignment marker222 different in shape from the alignment marker 222 used in Embodiment14 above and (ii) as the detector 192, a detector for detectingfluorescence intensity. The present embodiment, as a result, includes acontrol system that partially differs from that of Embodiment 14 above.The present embodiment is, however, identical to Embodiment 14 aboveexcept for the above point.

The following describes how the present embodiment differs fromEmbodiment 14 above.

The vapor deposition device 50 of the present embodiment, as with thevapor deposition device 50 of Embodiment 14 above, includes: a vacuumchamber 60 (film growing chamber); a substrate moving mechanism 70(substrate moving means; moving means); a mask unit 80; an alignmentsensor 190 (alignment observing means); and a film thickness sensor 180(not illustrated in FIG. 51; see FIGS. 37 through 40). The vapordeposition device further includes, as a control circuit, not thecontrol circuit 280 but a control circuit 290 having (i) theconfiguration illustrated in FIG. 52 and (ii) that illustrated in FIG.41 referred to above. The configuration illustrated in FIG. 41 isidentical to that described in Embodiment 12 above. The presentembodiment thus omits such a description.

FIG. 52 is a block diagram partially illustrating a configuration of thevapor deposition device 50 of the present embodiment.

As illustrated in FIG. 52, the control circuit 290 includes, each as analignment control section: a detecting section 291 (difference detectingsection; computing section); a correction amount calculating section 232(computing section); a mask drive control section 233; a substrate drivecontrol section 234; a vapor deposition ON/OFF control section 292; anda shutter drive control section 236.

In the embodiment, (i) the detecting section 291 and the correctionamount calculating section 232 correspond to the computing section 102in FIG. 4, (ii) the detecting section 291 corresponds to the detectingsection 231 in FIG. 40, and (iii) the vapor deposition ON/OFF controlsection 292 corresponds to the vapor deposition ON/OFF control section235 in FIG. 40.

The description below deals, for FIG. 52, with only the detectingsection 291 and the vapor deposition ON/OFF control section 292. For theother constituent elements, Embodiment 12 above is to be referred to by,for example, replacing (i) the detecting section 231 with the detectingsection 291 and (ii) the vapor deposition ON/OFF control section 235with the vapor deposition ON/OFF control section 292.

The present embodiment is arranged as follows: As illustrated in FIG.52, on the basis of a fluorescence intensity detected by the detector192 included in the alignment sensor 190 which fluorescence intensityserves as a detection signal from the alignment sensor 190, thedetecting section 291 detects (as a difference) (i) the amount ofpositional difference (that is, a shift component along the x axisdirection and the y axis direction, and a rotation component on the x-yplane) between the alignment marker 222 and the actually formed vapordeposition film 211 and (ii) the amount of scanning the film formationsubstrate 200. The detecting section then transmits a result of thedetection to the correction amount calculating section 232 and the vapordeposition ON/OFF control section 292.

In the present embodiment as well as the embodiments above, in the casewhere there are provided a plurality of alignment sensors 190 along thescanning direction or along the direction perpendicular to the scanningdirection so that the plurality of alignment sensors 190 observe thealignment marker 222 and the vapor deposition film 211 in a plurality ofregions simultaneously, it is possible to observe, not only the amountof scanning the film formation substrate 200, but also mispositioning (θmispositioning) along a rotation direction between the shadow mask 81and the film formation substrate 200.

The vapor deposition ON/OFF control section 292 calculates, from (i) thesubstrate scan amount detected by the detecting section 291 and (ii) thesubstrate scan correction amount calculated by the correction amountcalculating section 232, the position of the film formation substrate200 relative to the vapor deposition area of the vapor deposition source85. The Vapor deposition ON/OFF control section then generates (i) avapor deposition ON signal at the start-end of a film formation region(vapor deposition region) for the vapor deposition film 211 and (ii) avapor deposition OFF signal at the rear-end of the film formationregion.

In the present embodiment as well as the embodiments above, thealignment sensor 190, which designed to detect an image of an actuallydeposited vapor deposition film 211, is provided further downstream inthe substrate scanning direction than the shadow mask 81. Thus, thestart-end marker is provided separately from the alignment marker 222 ata position that is further upstream in the substrate scanning directionthan the vapor deposition region 210 of the film formation substrate200. The rear-end marker is provided (i) inside the vapor depositionregion 210 of the film formation substrate 200 and (ii) at a positionthat is further upstream in the substrate scanning direction, than therear-end of the vapor deposition region 210 of the film formationsubstrate 200.

The present embodiment, as in Embodiment 14 above, detects therespective positions of the vapor deposition film 211 and the alignmentmarker 222 with use of PL by an organic layer. Thus, in the presentembodiment, in the case where (i) the detector 192 is a detector fordetecting fluorescence intensity as described above to detect astart-end marker and a rear-end marker, the start-end marker ispreferably (i) made of a material that exhibits PL and (ii) providedoutside the vapor deposition region 210.

The rear-end marker is provided inside the vapor deposition region 210.Thus, the rear-end marker preferably has (i) a shape that is differentfrom that of the alignment marker 222, or (ii) a discontinuous cycle(formation cycle) that varies according to the position in the filmformation substrate 200 as illustrated in FIG. 45, so that the rear-endmarker can be recognized.

The rear-end of the vapor deposition region 210 may alternatively bedetermined on the basis of a substrate scan amount detected by thedetecting section 291, and is thus not necessarily required.

In the present embodiment, it is possible to, while carrying out vapordeposition and a scan, align the alignment marker 222 with the vapordeposition film 211, actually deposited on the film formation substrate200, with each other in real time in the case where, as described above,(i) the alignment sensor 190 serving as alignment observing means andfixed in position relative to the shadow mask 81 is so provided as to beadjacent to the shadow mask 81 and the vapor deposition source 85 and(ii) the alignment sensor 190 continues to monitor (recognize), on thebasis of, as described above, the ratio between fluorescenceintensities, the positional relationship between the alignment marker222 (alignment pattern), provided to the film formation substrate 200,and the vapor deposition film 211, actually deposited on the filmformation substrate 200. Further, in the case where an alignment iscarried out in real time between (i) the alignment marker 222 and (ii)the vapor deposition film 211 actually deposited on the film formationsubstrate 200, it is possible in turn to align the shadow mask 81 andthe film formation substrate 200 with each other in real time. Thisarrangement makes it possible to carry out a more accurate alignment.

Further, the present embodiment, which eliminates the need to stop ascan for an alignment, can form a vapor deposition film 211 with higherefficiency. The present embodiment consequently makes it possible toproduce a finished product with higher efficiency.

In the present embodiment, suitably designing the pattern shape for thealignment marker 222 as described above makes it possible to correctlydetermine, without image recognition, the amount of scanning the filmformation substrate 200.

The present embodiment uses, as the alignment marker 222, an alignmentmarker 222 having a grid shape and including four openings 222 a insideitself (that is, inside a single alignment marker 222). The presentembodiment is, however, not limited to such an arrangement. As is clearfrom, for example, Embodiment 12 above, in the case where (i) there isan opening in a state in which alignment objects are placed on top ofeach other and (ii) a measurement by an alignment sensor provides avalue that varies according to the area of a portion of a measurementobject which portion is exposed through the opening, it is possible todetermine misalignment on the basis of the measurement value. Theopenings 222 a thus simply need to be provided in a number of two ormore, and the number is not limited to four.

Embodiments 14 and 15 each described a method by which it is possibleto, while carrying out vapor deposition and a scan, align the alignmentmarker 222 with the vapor deposition film 211, actually deposited on thefilm formation substrate 200, with each other in real time by, asdescribed above, continuously monitoring (recognizing), with use of thealignment sensor 190, the positional relationship between (i) thealignment marker 222 provided to the film formation substrate 200 and(ii) the vapor deposition film 211 deposited on the film formationsubstrate 200.

The present embodiment is, however, not limited to such an arrangement.It is alternatively possible to carry out an alignment between theshadow mask 81 and the film formation substrate 200 by, for example, (i)observing, with use of a plurality of alignment sensors each fixed inposition relative to the shadow mask 81, the respective relativepositions of an alignment marker 84 provided to the shadow mask 81 and avapor deposition film 211 actually deposited on the film formationsubstrate 200 and (ii) adjusting, on the basis of a result of theobservation, the respective relative positions of the alignment marker84 provided to the shadow mask 81 and the vapor deposition film 211actually deposited on the film formation substrate 200.

It is further alternatively possible to (i) similarly with use of aplurality of alignment sensors each fixed in position relative to theshadow mask 81, observe the respective relative positions of analignment marker 84 provided to the shadow mask 81 and an alignmentmarker 221 or alignment marker 222 provided to the film formationsubstrate 200 and (ii) carry out an alignment between the shadow mask 81and the film formation substrate 200 on the basis of a result of theobservation.

The above arrangement eliminates the need to, for example, form anopening in the shadow mask 81 to observe, through the opening, thealignment marker 221 or alignment marker 222 provided to the filmformation substrate 200. Thus, the alignment markers 84, 221, and 222may each be, for example, made of any material.

In the case where the alignment markers 84 and 221 are provided outsidethe vapor deposition are of the vapor deposition source 85, it ispossible to (i) form an opening in the film formation substrate 200 asan alignment marker 221 and thus (ii) observe, through the opening, thealignment marker 84 that is provided to the shadow mask 81 and that ismade of any material or includes an opening.

Embodiment 16

The present embodiment is described below mainly with reference to (a)and (b) of FIG. 53 through FIG. 59.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 15 above. Constituent elements ofthe present embodiment that are identical in function to theirrespective equivalents described in Embodiments 1 through 15 are eachassigned the same reference numeral, and are not described here.

(a) and (b) of FIG. 53 each illustrate a relation between (i) an opening82 of the shadow mask 81 and (ii) the vapor deposition width and vapordeposition position of a vapor deposition film 211, the relation beingobserved in the case where there is provided a void between the filmformation substrate 200 and the shadow mask 81.

The embodiments above each (i) use a rectangular (belt-shaped) shadowmask 81 smaller in area (size) than the vapor deposition region 210 ofthe film formation substrate 200, and (ii) in a state in which there isprovided a uniform void (gap g1; mask gap) between the film formationsubstrate 200 and the shadow mask 81, scan at least one of (a) thecombination of the shadow mask 81 and the vapor deposition source 85 and(b) the film formation substrate 200 to deposit vapor depositionparticles onto the entire vapor deposition region of the film formationsubstrate 200.

In the case where, however, there is provided a void as above betweenthe film formation substrate 200 and the shadow mask 81, there is notnecessarily a coincidence between (i) the vapor deposition width (forexample, the pattern width of a pixel pattern) and vapor depositionposition of a vapor deposition film 211 actually deposited on the filmformation substrate 200 and (ii) the width and position of an opening 82of the shadow mask 81.

In the case where, for example, (i) the film formation substrate 200 andthe shadow mask 81 have the positional relationship illustrated in (a)of FIG. 53; and (ii) the vapor deposition particles fly in the directionindicated by the arrow in (a) of FIG. 53, the vapor deposition patternof a vapor deposition film 211 (for example, the pixel pattern formed bya vapor deposition film 211) is different in width and position from theopenings 82 of the shadow mask 81.

Thus, in the case where the amount of the void between the filmformation substrate 200 and the shadow mask 81 is changed as illustratedin (b) of FIG. 53 from (i) the state indicated by the chaindouble-dashed line to (ii) the state indicated by the solid line, thevapor deposition pattern of a vapor deposition film 211 is furtherdifferent in both width and position from the opening 82 of the shadowmask 81.

As described above, in the case where there is a void between the filmformation substrate 200 and the shadow mask 81, a change in the amountof the void causes a change in the vapor deposition width and vapordeposition position of a vapor deposition film 211 to be obtained.

This indicates that without a fixed amount of the void, there occursmispositioning of a vapor deposition pattern, thereby making itimpossible to form a high-resolution vapor deposition pattern throughthe entire vapor deposition region of the film formation substrate 200.

Thus, the embodiments above each, as indicated in, for examples, S13 ofFIG. 10, carry out vapor deposition by (i) carrying out, after a roughalignment, an alignment between the film formation substrate 200 and theshadow mask 81 by carrying out a gap adjustment so that there is a gap(substrate-mask gap) with a desired, uniform value between the filmformation substrate 200 and the shadow mask 81 throughout the filmformation substrate 200 such as a TFT substrate 10, and then (ii)moving, for example, the film formation substrate 200 relative to theshadow mask 81 while maintaining the substrate-mask gap.

The substrate-mask gap can be adjusted to an extent by, for example,measuring the substrate-mask gap and adjusting the height of, forexample, the mask holding member 87 or the substrate holding member 71so that the substrate-mask gap has a desired, uniform value.

In actuality, however, the void amount is without means for controllingit, constantly changed due to such factors as self-weight bending of thefilm formation substrate, accuracy of the vapor deposition deviceitself, and thermal expansion of a member.

In particular, in the case where a large-sized substrate is used as thefilm formation substrate as described above, there arises the followingproblem: The void amount is easily changed due to, for example,self-weight bending of the film formation substrate and/or thermalexpansion of the film formation substrate or the vapor deposition mask.

In view of the above problem, the embodiments above each appropriatelymaintain the positional relationship between the film formationsubstrate 200 and the shadow mask 81 relative to each other by usingmembers such as the mask unit moving mechanism 240, the mask tensionmechanism 88, the substrate moving mechanism 70, and the mask supportingsection 141 as adjusting means for adjusting the respective positions ofthe film formation substrate 200 and the shadow mask 81 relative to eachother.

To adjust the substrate-mask gap to a desired, uniform value, theembodiments above, for example, (i) adjust tension to the shadow mask 81with use of, for example, alignment markers, (ii) hold the filmformation substrate 200 with use of, for example, an electrostatic chuckin a state in which there is no self-weight bending in the filmformation substrate 200, (iii) correct parallelism between the shadowmask 81 and the film formation substrate 200 with use of an abuttingmember such as the mask supporting section 141 (that is, adjust the gapg1 between the shadow mask 81 and the film formation substrate 200 sothat the gap g1 is uniform), or (iv) correct parallelism of the shadowmask 81 with use of a plurality of alignment markers such as theabsolute-alignment markers 110.

Further, to maintain the substrate-mask gap so that it is uniform duringvapor deposition, the embodiments above, for example, (i) adjust tensionto the shadow mask 81 with use of, for example, alignment markers tocorrect self-weight bending and/or thermal bending of the shadow mask81, (ii) move the film formation substrate 200 in a state in which thefilm formation substrate 200 is adhered to, for example, anelectrostatic chuck, (iii) instead of circular movement by a ball screwas in Patent Literature 10, use a moving mechanism, such as aroller-type or hydraulic moving mechanism and an XY stage, that can movethe film formation substrate 200 or the mask unit 80 horizontally whileholding the film formation substrate 200 or the mask unit 80, or (iv)carry out vapor deposition by depo-down so that no bending is caused inthe film formation substrate 200.

The present embodiment describes, in relation to a vapor depositionmethod involving a void as described above, a method for controlling thevoid amount (that is, the width of the gap g1) to a uniform value moreprecisely by (i) accurately determining, for example, the amount of thevoid between the shadow mask 81 and the film formation substrate 200 anddistribution of the void amount and (ii) finely adjusting the void for ahigh-resolution vapor deposition pattern.

FIG. 54 is a cross-sectional view schematically illustrating aconfiguration of a main part of the vapor deposition device 50 of thepresent embodiment. FIG. 55 is a bird's eye view of example mainconstituent elements inside the vacuum chamber 60 of the vapordeposition device 50 illustrated in FIG. 54.

The vapor deposition device 50 of the present embodiment, as illustratedin FIG. 54, includes: a vacuum chamber 60 (film growing chamber); asubstrate moving mechanism 70 (substrate moving means; moving means); amask unit 80; void sensors 401; and a control circuit 230.

The mask unit 80 of the present embodiment, as illustrated in FIG. 54,includes: a shadow mask 81; a vapor deposition source 85; a shutter 89;and actuators 402 (void amount control mechanism; holding means;supporting member). In the present embodiment as well as the embodimentsabove, the mask unit 80 preferably includes a tension mechanism (notshown) such as a mask tension mechanism 88.

The vacuum chamber 60 contains the substrate moving mechanism 70, themask unit 80, and the void sensors 401.

As illustrated in FIG. 54, the present embodiment describes an examplein which the film formation substrate 200 is moved relative to the maskunit 80 with use of a substrate moving mechanism 70 that is, forexample, a roller-type moving mechanism including a frame-shapedsubstrate holding member 71 as illustrated in, for example, FIG. 37 or48.

The present embodiment is, however, not limited to such ah arrangement.The present embodiment may alternatively be arranged, for example, suchthat the film formation substrate 200 is moved relative to the mask unit80 with use of a hydraulic moving mechanism as described above. Thepresent embodiment may further alternatively be arranged such that, asillustrated in FIG. 1, (i) a substrate holding member 71 including anelectrostatic chuck is provided to a surface of the film formationsubstrate 200 which surface is opposite to s surface facing the maskunit 80 and (ii) the film formation substrate 200 is moved in a state inwhich the film formation substrate 200 is adhered to the electrostaticchuck.

The present embodiment may, of course, also be arranged such that themask unit 80 is moved relative to the film formation substrate 200 withuse of, for example, the mask unit moving mechanism 240 and the maskdrive control section 233 as described above. In this case, the presentembodiment may be arranged such that (i) only the mask unit 80 is movedwhile the film formation substrate 200 is fixed, or that (ii) both thefilm formation substrate 200 and the mask unit 80 are moved relative toeach other.

The present embodiment, to carry out a scan while more preciselymaintaining a uniform amount for the void between the film formationsubstrate 200 and the shadow mask 81, includes the void sensors 401 andthe actuators 402 each as adjusting means for adjusting the respectivepositions of the film formation substrate 200 and the shadow mask 81relative to each other.

The void sensors 401 are each a sensor for measuring the amount of thevoid between the film formation substrate 200 and the shadow mask 81.

The void sensors 401 each measure the amount of the void between thefilm formation substrate 200 and the shadow mask 81, and transmits tothe control circuit 410 a result of the measurement in the form of avoid amount signal.

The void sensors 401 are each, for example, an optical void sensor formeasuring (reading) the amount of the void between the film formationsubstrate 200 and the shadow mask 81 through a transparent filmformation substrate 200 or through a transparent region of the filmformation substrate 200 (that is, through the film formation substrate200).

In the above case, the void sensors 401, the film formation substrate200, and the shadow mask 81 are so attached as to have a positionalrelationship with which, when measuring the void amount, the voidsensors 401 can measure, through a transparent region of the filmformation substrate 200, the void extending from the film formationsubstrate 200 to a non-opening section of the shadow mask 81.

As illustrated in FIGS. 54 and 55, the void sensors 401 of the presentembodiment are each provided at a position that is (i) above the filmformation substrate 200 (that is, on the top surface side (thereof),(ii) in the vicinity of the mask unit 80, and (iii) on the upstream sideof the substrate scanning direction.

FIG. 55 illustrates a case in which two void sensors 401 are provided atrespective ends of a long side 81 a of the shadow mask 81, which endscorrespond to respective ends of the shadow mask 81 which ends arelocated downstream in the direction in which the substrate makes itsentry (that is, ends located upstream in the substrate scanningdirection).

The film formation substrate 200 is preferably provided with avoid-sensing transparent region (sensing light transmitting region)located away from alignment marker sections 220 of the film formationsubstrate 200. This arrangement prevents sensing of the amount of thevoid between the film formation substrate 200 and the shadow mask 81from being subjected to disturbance caused by the alignment markersections 220 (not shown) of the film formation substrate 200 andalignment marker sections 83 (not shown) of the shadow mask 81 or byoptical means (not shown) for reading the marker sections 220 and 83.The void-sensing transparent region is, depending on the situation, notnecessarily located away from the alignment marker sections. The voidsensors 401 are each so provided as to face the void-sensing transparentregion.

The actuators 402 are each a z-axis drive actuator for controlling thevoid amount by converting a control signal into a motion along the zaxis direction (that is, the direction of an axis that connects theshadow mask 81 and the film formation substrate 200 and that isperpendicular to the shadow mask 81 and the film formation substrate200).

The actuators 402 each function as a void amount control mechanism forcontrolling the amount of the void between the shadow mask 81 and thefilm formation substrate 200.

The actuators 402 and the vapor deposition source 85 may each be fixedto, for example, (i) a bottom wall among inner walls of the vacuumchamber 60, or to (ii) a mask holding member (that is, a mask holdingmember provided separately from the actuators 402), such as a holder,that is so provided as to be capable of being moved by the mask unitmoving mechanism for moving the mask unit 80 relative to the filmformation substrate 200.

The present embodiment below describes an example case in which, asillustrated in FIGS. 54 and 55, the actuators 402 are each directlyprovided (fixed) to the shadow mask 81. The present embodiment is,however, not limited to such an arrangement.

Although the shadow mask 81 and the vapor deposition source 85 are fixedin position relative to each other, there is a minute operating regiondue to a void amount adjustment process. In the present embodiment, theactuators 402 are each so provided as to be adjacent to a lower surfaceof the shadow mask 81 as illustrated in FIGS. 54 and 55. Thisarrangement makes it possible to carry out a fine adjustment during thevoid amount adjustment process.

The fine adjustment during the void amount adjustment process does notaffect the relative positional relationship between the shadow mask 81and the vapor deposition source 85 along the substrate scanningdirection. The present embodiment, as well as the embodiments above,fixes the relative respective positions of the shadow mask 81 and thevapor deposition source 85 along the substrate scanning direction.

FIG. 56 is a block diagram partially illustrating a configuration of thevapor deposition device 50 illustrated in FIG. 54.

As illustrated in FIG. 56, the control circuit 410 includes, each as avoid amount control section: a void difference amount calculatingsection 411 (void difference amount detecting section; computingsection); a void difference correction amount deriving section 412 (voiddifference correction amount calculating section; computing section);and an actuator drive control section 413.

The void sensors 401 measure the amount of the gap (void) between thefilm formation substrate 200 and the shadow mask 81, and transmit aresult of the measurement to the control circuit in the form of a voidamount signal as described above.

The void difference amount calculating section 411 calculates, from thevoid amount signal transmitted from the void sensor 401, the amount ofdifference (void difference amount) between (i) the gap between the filmformation substrate 200 and the shadow mask 81, the gap having beenmeasured by the void sensor 401, and (ii) the gap g1 between the filmformation substrate 200 and the shadow mask 81, the gap g1 having beenset in advance.

The void difference correction amount deriving section 412 derives(calculates), from the void difference amount calculated by the voiddifference amount calculating section 411, a correction value (voidcorrection value) for correcting the above difference, and transmit aresult of the derivation to the actuator drive control section 413 inthe form of an adjustment signal.

The actuator drive control section 413, on the basis of the adjustmentsignal (void correction value), moves the actuators 402 along the z axisdirection to control the gap (mask gap) between the film formationsubstrate 200 and the shadow mask 81 so that the gap is uniform.

The following describes, with reference to FIGS. 55, 57, and a step forforming a film with use of the vapor deposition device 50.

FIG. 57 is a flowchart illustrating an example method for forming apredetermined pattern on a TFT substrate 10 with use of the vapordeposition device 50 of the present embodiment.

The method first, as illustrated in FIG. 55, places the shadow mask 81,fixed to the actuators 402, above the vapor deposition source 85 in thevacuum chamber 60 in such a manner that the substrate scanning directionis identical to the long-axis direction of the stripe-shaped openings 82provided in the shadow mask 81. This step assembles the mask unit 80(preparation of a mask unit).

The method next, as illustrated in FIG. 57, inserts the TFT substrate 10in the vacuum chamber 60, and carries out a rough alignment with use ofthe alignment markers 221 (not shown) of the TFT substrate 10 as thefilm formation substrate 200 so that each sub-pixel column of anidentical color of the TFT substrate 10 has a direction that isidentical to the substrate scanning direction (S11). The method holdsthe TFT substrate 10 with use of the substrate holding member 71 so thatno bending due to the self weight is caused to the TFT substrate 10.

The method then carries out a rough alignment between the TFT substrate10 and the shadow mask 81 (S12). The method further adjusts the gap g1(substrate-mask gap) between the TFT substrate 10 and the shadow mask 81so that the gap is uniform, and places the TFT substrate 10 and theshadow mask 81 so that they face each other. This allows the TFTsubstrate 10 and the shadow mask 81 to be aligned with each other (seeS13 in FIG. 10).

In S13 above, the present embodiment controls the gap g1 to a uniformvalue by, as indicated by S61 in FIG. 57, (i) measuring the amount ofthe void between the TFT substrate 10 and the shadow mask 81 with use ofthe void sensors 401 and (ii) as described above, transmitting asuitable adjustment signal (void correction value) from the controlcircuit 410 to the actuators 402 on the basis of a void amount signalfrom the void sensors 401 (S61).

The method next stops the operation of the actuators 402, and parriesout vapor deposition while mechanically maintaining the gap g1 andscanning the TFT substrate 10 simultaneously (S62).

The method, when carrying out vapor deposition while mechanicallymaintaining the gap g1 and scanning the TFT substrate 10 simultaneously,can be identical to any method described in the embodiments above. Toprevent the void amount from changing due to such factors as thermalexpansion of the shadow mask 81, the method desirably adjusts tension tothe shadow mask 81 with use of a tension mechanism such as the masktension mechanism 88 to correct self-weight bending and/or thermalbending of the shadow mask 81.

The method then retrieves, from the vacuum chamber 60, the TFT substrate10 on which a predetermined pattern has been formed (S17). In S62, themethod carries out, according to need, steps similar to the steps S14and S17 in FIG. 10.

The present embodiment, which uses the void sensors 401 to measure theamount of the void between the film formation substrate 200 and theshadow mask 81 as described above, can accurately determine the amountof the void between the film formation substrates 200 and the shadowmask 81.

The present embodiment can thus accurately control the gap g1 (voidamount) between the film formation substrate 200 and the shadow mask 81,and maintain the gap so that the gap has a desired, uniform value.

The present embodiment, which uses the actuators 402 to adjust the gapg1, that is, to control the void amount as described above, can carryout a fine adjustment. This arrangement consequently makes it possibleto adjust the void amount easily and accurately.

Carrying out a fine adjustment with use of the actuators 402 asdescribed above makes it possible to more precisely control the voidamount. Further, providing a plurality of actuators 402 as describedabove makes it possible to locally control the void amount depending onthe distribution of the void amount.

Thus, the present embodiment can prevent width variation,mispositioning, and shape change in a vapor deposition film 211 (notshown), such as a pixel pattern, that is deposited through the openings82 of the shadow mask 81. This arrangement consequently makes itpossible to accurately form a high-resolution pattern throughout thefilm formation substrate 200.

FIG. 57 illustrates an example case of, in S62, carrying out vapordeposition while maintaining the gap g1 mechanically as described above.The present embodiment is, however, not limited to such an arrangement.

FIG. 58 is a flowchart illustrating another example method for forming apredetermined pattern on a TFT substrate 10 with use of the vapordeposition device 50 of the present embodiment.

In this example as well as the above example, the method first, asillustrated in FIG. 55, places the shadow mask 81, fixed to theactuators 402, above the vapor deposition source 85 in the vacuumchamber 60 in such a manner that the substrate scanning direction isidentical to the long-axis direction of the stripe-shaped openings 82provided in the shadow mask 81. This step assembles the mask unit 80(preparation of a mask unit).

The method then, as illustrated in FIG. 58, carries out steps similar tothe steps S11 to S61 in FIG. 57. The present method next measures andcontrols (adjusts) the void amount in real time (i) while scanning thefilm formation substrate 200, measuring the amount of the void betweenthe TFT substrate 10 and the shadow mask 81 the use of the void sensors401 and (ii) on the basis of void amount signal from the void sensors401, transmitting a suitable adjustment signal (void correction value)from the control circuit 410 to the actuators 402. With thisarrangement, when vapor deposition is carried out while the TFTsubstrate 10 is scanned as indicated in S63, the void amount iscorrected in real time, and vapor deposition is thus carried out whilethe gap g1 is so maintained as to be uniform as indicated in S64.

The method then retrieves, from the vacuum chamber 60, the TFT substrate10 on which a predetermined pattern has been formed (S17). In thisexample as well as the above example, the method carries out, in S63,steps similar to the steps S14 to S17 in FIG. 10 according to need.

The method indicated in FIG. 58 is, as described above, more complex inboth control and mechanism than the method indicated in FIG. 57;however, the method of FIG. 58 makes it possible to, while moving atleast a first one of the mask unit 80 and the film formation substrate200 relative to a second one and thus carrying out vapor deposition,reliably maintain the gap g1 along the entire substrate scanningdirection so that the gap has predetermined, constant value. The abovearrangement consequently makes it possible to carry out patterning withhigher accuracy.

The present embodiment, as illustrated in FIG. 55, describes an examplecase involving two void sensors provided at respective ends of a longside 81 a of the shadow mask 81, which ends correspond to respectiveends of the shadow mask 81 which ends are located downstream in thedirection in which the substrate makes its entry. The present embodimentis, however, not limited to such an arrangement.

FIG. 59 is a bird's eye view of other example main constituent elementsinside the vacuum chamber 60 of the vapor deposition device 50illustrated in FIG. 54.

FIG. 59 illustrates a case involving three void sensors 401 providedalong the long side 81 a (specifically, at (i) respective ends of thelong side 81 a located downstream in the substrate entry direction and(ii) the middle of the long side).

It is possible to provide only one void sensor 401 or, as illustrated inFIG. 55, two void sensors 401. It is, however preferable to provide aplurality of void sensors to determine the distribution of the voidamount. It is particularly preferable to provide a plurality of voidsensors next to one another on an identical plane along the directionperpendicular to the substrate scanning direction (that is, to thedirection in which the shadow mask 81 and the film formation substrate200 are moved relative to each other).

In the case where there are provided three or more void sensors 401 nextto one another along the direction perpendicular to the substratescanning direction as illustrated in FIG. 59, it is possible to moreaccurately determine the distribution of the void amount.

As described above, the present embodiment uses, as the void sensors401, optical void sensors each for reading the amount of the voidbetween the film formation substrate 200 and the shadow mask 81 throughthe film formation substrate 200.

The present embodiment is, however, not limited to such an arrangement.The void sensors 401 may each be a void sensor of another type such asan electrostatic capacity type and an eddy current type.

A void sensor of an electrostatic capacity type or an eddy current type,however, basically measures the void between an object and itself, theobject needing to be a conductor. The use of such a void sensor issubject to a restriction as a result. The void sensors 401 are thus eachdesirably an optical void sensor as described above.

The present embodiment describes an example case in which the actuators402 are each fitted to the shadow mask 81.

The present embodiment is, however, not limited to such an arrangement.The actuators 402 each simply need to be capable of controlling theamount of the void between the shadow mask 81 and the film formationsubstrate 200.

The actuators 402 may each be arranged, in order to control the voidamount, to (i) move itself along the z axis direction to directly movethe shadow mask 81 along the z axis direction, (ii) move, along the zaxis direction, the entirety of the mask unit 80 including the vapordeposition source 85 and the shadow mask 81, or (iii) move, along the zaxis direction, a part of the unit which part (for example, a maskframe) includes at least the shadow mask 81.

For example, the shadow mask 81 may be welded to a mask frame, and theactuators 402 may each be arranged to drive the mask frame.

In a case where, for example, there is provided a unit for setting orreplacing the shadow mask 81 (or a mask frame provided integrally withthe shadow mask 81), the actuators 402 may each be arranged to drive theunit.

In a case where, for example, the mask unit 80 is provided with amechanism, such as (i) the mask tension mechanism 88, (ii) the maskholding member 87 including the mask fixing stand 144 having a slidemechanism, or (iii) the mask clamps 130, for applying tension to theshadow mask 81, the actuators 402 may each be arranged to drive theentire mechanism.

The actuators 402 may each be so provided as to be adjacent to a topsurface of the shadow mask 81 instead of its lower surface.

In a case of depo-down, for example, the actuators 402 may each be soprovided as to be adjacent to the top surface of the shadow mask 81.

As described above, the actuators 402 may each be directly fixed to theshadow mask 81 to be used as the mask holding member 87, or be providedseparately from the mask holding member 87.

The present embodiment, as described above, describes an example case inwhich the actuators 402 are each fitted to the shadow mask 81. Thepresent embodiment is, however, not limited to such an arrangement.

The present embodiment may alternatively be arranged to, for example,have another system in which (i) the shadow mask 81 is fixed, (ii) amechanism for a driving along the z axis direction, such as an actuator,is provided inside a mechanism (for example, the substrate movingmechanism 70) for driving the film formation substrate 200, and (iii)the mechanism for a driving along the z axis direction controls the voidamount.

In other words, the present embodiment may alternatively be arrangedsuch that the film formation substrate 200, instead of the shadow mask81, is moved for control of the amount of the void between the shadowmask 81 and the film formation substrate 200.

As described above, the actuator is simply required to move at least oneof (1) either a part of the mask unit 80 which part includes at leastthe shadow mask 81 or the entirety of the mask unit 80 an (2) the filmformation substrate 200. The actuator may be so provided as to, forexample, be adjacent to the film formation substrate 200.

The actuator is simply required to move at least one of (1) either apart of the mask unit 80 which part includes at least the shadow mask 81or the entirety of the mask unit 80 and (2) the film formation substrate200 in order to adjust the void amount. It is preferable to provide aplurality of actuators because such an arrangement makes it possible tocontrol the void amount accurately throughout the entire film formationsubstrate 200. However, only one actuator may instead be provided in thecase where, for example, such an actuator is provided on the lowersurface side of the mask holding member 87 such as a holder.

In the present embodiment as well as the embodiments above, the shadowmask 81 is, during the mask preparation step or vapor deposition step,desirably held horizontally by applying tension to the shadow mask withuse of the mask tension mechanism 88 so that there occurs no self-weightor thermal bending or elongation.

In the case where, as described above, there is provided a mechanism,such as (i) the mask tension mechanism 88 and (ii) the mask holdingmember 87 including the mask fixing stand 144 having a slide mechanism,for applying tension to the shadow mask 81, driving the entire mechanism(for example, a part or the entirety of a unit including the mechanism)with use of the actuators 412 makes it possible to apply tension to theshadow mask 81 by a method similar to the methods described in theembodiments above, for example, Embodiments 1 and 7 through 12.

Further, even in the case where the actuator is so provided as to beadjacent to the film formation substrate 200, it is possible to applytension to the shadow mask 81 by a method similar to the methodsdescribed in the embodiments above, for example, Embodiments 1 and 7through 12.

The present embodiment is, however, not limited to such arrangements.Even in the case where, for example, the actuators 402 are each directlyfitted to the shadow mask 81 as described above, it is possible to applytension to the shadow mask 81 and control the gap g1 to a constant valueon the basis of an arrangement in which, for example, the actuators 402are each so provided as to be slidable in a direction substantiallyparallel to a surface direction as with the mask holding member 87 inFIG. 1 or the movable section 142 in FIG. 31 by, for example, beingconnected to a slider mechanism.

The present embodiment describes, each as a constituent element(functional block; control section) in the control circuit 410, onlyconstituent elements for, for example, controlling the gap g1 with userof the void sensors 401.

It is clear, however, that the control circuit 410 may alternativelyinclude, other than the above constituent elements, a constituentelement similar to a constituent element included in (i) the controlcircuit 100 illustrated in FIG. 4 or 29, (ii) the control circuit 230illustrated in FIG. 40 or 41, (iii) the control circuit 280 illustratedin FIG. 49, or (iv) the control circuit 290 illustrated in FIG. 52.

The present embodiment, as well as the embodiments above, describes anexample case in which both the openings 82 of the shadow mask 81 and theemission holes 86 of the vapor deposition source 85 are arrangedone-dimensionally. The present embodiment is, however, not limited tosuch an arrangement. It is clear that (i) the openings 82 of the shadowmask 81 and the emission holes 86 of the vapor deposition source 85 maybe arranged two-dimensionally and that (ii) the shadow mask and thevapor deposition source may include a single opening and a singleemission hole, respectively.

The present embodiment is, as well as the embodiments above arrangedsuch that (i) there is provided, as the shutter 89, a shutter that iscapable of moving in a space between the shadow mask 81 and the vapordeposition source 85, and that (ii) when steps similar to the steps S14to S17 in FIG. 10 are carried out in S62 indicated in FIG. 57 or in S63indicated in FIG. 58, the shutter 89 is inserted between the vapordeposition source 85 and the shadow mask 81 to prevent vapor depositionparticles from adhering to a non vapor deposition region (that is, aportion that needs no vapor deposition). The present embodiment is,however, not limited to such an arrangement.

The present embodiment may be arranged, for example, such that, asdescribed above, (i) the vapor deposition source 85 is a vapordeposition source 85 that can be switched ON/OFF and that (ii) when aportion of the film formation substrate 200 which portion needs no vapordeposition is positioned in a region (that is, a region facing anopening 82) that faces an opening region of the shadow mask 81, vapordeposition is turned OFF so that no vapor deposition particles fly.

Embodiment 17

The present embodiment is described below mainly with reference to FIGS.60 and 61.

The present embodiment mainly deals with how the present embodiment isdifferent from Embodiments 1 through 16 (particularly Embodiment 6)above. Constituent elements of the present embodiment that are identicalin function to their respective equivalents described in Embodiments 1through 16 are each assigned the same reference numeral, and are notdescribed here.

As in Embodiment 16, the present embodiment describes, in relation to avapor deposition method involving a void, a method for more preciselycontrolling the amount of the void (that is, the width of the gap g1)between the film formation substrate 200 and the shadow mask 81 to auniform value in order to produce a high-resolution vapor depositionpattern.

FIG. 60 is a bird's eye view of example main constituent elements insidethe vacuum chamber 60 of the vapor deposition device 50 of the presentembodiment. FIG. 61 is a plan view illustrating void-sensing transparentregions in the film formation substrate used in the present embodiment.

The present embodiment is, in its general concept, identical toEmbodiment 16. The vapor deposition device 50 of the present embodimentincludes constituent elements that are identical to those of the vapordeposition device 50 of Embodiment 16.

More specifically, the vapor deposition device 50 of the presentembodiment includes constituent elements identical to those of the vapordeposition device 50 illustrated in FIG. 54. There is, however, adifference in (i) the respective numbers of the void sensors 401 andactuators 402 and (ii) the respective positions thereof.

Embodiment 16 above describes an example case involving void sensors 401each provided at a position that is (i) above the film formationsubstrate 200, (ii) in the vicinity of the mask unit 80, and (iii) alongthe long side 81 a located at an end upstream in the substrate scanningdirection, the void sensors being provided in the number of two (atrespective ends of the long side 81 a located downstream in thesubstrate entry direction) or three (at respective ends of the long side81 a located downstream in the substrate entry direction and the middleof the long side).

The present embodiment, as illustrated in FIG. 60, involves void sensors401 each provided at a position that is (i) above the film formationsubstrate 200 and (ii) in the vicinity of the mask unit 80, the voidsensors being provided in the number of three along the long side 81 alocated at the end upstream in the substrate scanning direction andthree more along the long side 81 a located downstream in the substratescanning direction. In other words, the present embodiment involves voidsensors 401 provided at respective ends and the middle of each long side81 a of the shadow mask 81.

Embodiment 16 above describes an example case involving two actuators402 provided, as illustrated in FIGS. 55 and 59, at respective ends ofthe vapor deposition source 85 which ends are opposite to each otheralong the long-side direction of the vapor deposition source 85, thatis, provided in the vicinity of the middle of each short side 81 b ofthe shadow mask 81.

The present embodiment, as illustrated in FIG. 60, involves not only thetwo actuators 402 provided at the respective ends of the vapordeposition source 85 which ends are opposite to each other along thelong-side direction of the vapor deposition source 85, but also twoadditional actuators provided, in the vicinity of the middle of thevapor deposition source 85 along the long-side direction thereof,respectively on the upstream side and downstream side of the substratescanning direction.

The present embodiment describes below an example case of, whilescanning the film formation substrate 200, sensing the void amount withuse of the void sensors 401, provided as illustrated in FIG. 60, tocontrol (adjust) the void amount in real time.

In the present embodiment, which controls the void amount in real time,the film formation substrate 200 includes, as illustrated in FIG. 61,void-sensing transparent regions 201 (sensing light transmittingregions) so provided in a region facing the void sensors 401 as toextend along the substrate scanning direction.

Since the void sensors 401 are provided, as described above, at therespective ends and the middle of each long side 81 a of the shadow mask81, the example illustrated in FIG. 61 involves void-sensing transparentregions 201 so provided, (i) in the vicinity of the middle of the filmformation substrate 200 along the short-side direction thereof and (ii)at respective ends of the film formation substrate along the long-sidedirection thereof, as to extend along the substrate scanning direction.

In the present embodiment, the film formation substrate 200 thusincludes, each as a vapor deposition region 210, TFT circuit formationregions 202 a and 202 b so provided as to sandwich the void-sensingtransparent region 201 so provided in the vicinity of the middle of thefilm formation substrate 200 along the short-side direction thereof asto extend along the substrate scanning direction.

As described in Embodiment 16, the void-sensing transparent regions 201are preferably located away from alignment marker sections 220 of thefilm formation substrate 200. This arrangement prevents sensing of theamount of the void between the film formation substrate 200 and theshadow mask 81 from being subjected to disturbance caused by thealignment marker sections 220 (not shown) of the film formationsubstrate 200 and alignment marker sections 83 (not shown) of the shadowmask 81 or by optical means (not shown) for reading the marker sections220 and 83.

FIG. 61 illustrates a case in which the film formation substrate 200includes void-sensing transparent regions 201 provided continuouslyalong the substrate scanning direction. The present embodiment is,however, not limited to such an arrangement. The void-sensingtransparent regions 201 may alternatively be provided discontinuously.

In the present embodiment as well as the embodiments above, the voidsensors 401, the void-sensing transparent regions 201, and the shadowmask 81 are so attached as to have a positional relationship with which,when measuring the void amount, the void sensors 401 can measure,through the transparent regions 201 of the film formation substrate 200,the void extending from the film formation substrate 200 to anon-opening section of the shadow mask 81.

The present embodiment includes, as described above, a larger number ofvoid sensors 401 the Embodiment 16, and can thus obtain a larger amountof information about the void amount than Embodiment 16.

Similarly, the present embodiment includes a large number of actuators402 than Embodiment 16, an can thus carry out more precise control onthe basis of a larger amount of information than Embodiment 16.

The present embodiment in particular includes void sensors 401 andactuators 402 on both the upstream side and downstream side of thesubstrate scanning direction. Thus, even in the case where, for example,the void amount is large on the upstream side of the substrate scanningdirection and is small on the downstream side thereof, independentlycontrolling the actuator 402 on the upstream side and that on thedownstream side makes it possible to control the void amount accuratelythroughout the entire film formation substrate 200.

The present embodiment further includes a plurality of void sensors 401and actuators 402 along the long-side direction of the shadow mask 81(that is, the direction perpendicular to the substrate scanningdirection). Thus, even in the case where, for example, the void amountis large at a central portion of the shadow mask 81 along its long-sidedirection and is small at the ends of the shadow mask, independentlycontrolling the actuator 402 corresponding to the central portion of theshadow mask 81 along its long-side direction and the actuators 402corresponding to the respective ends makes it possible to control thevoid amount accurately throughout the entire film formation substrate200.

As described above, the present embodiment can, while carrying out analignment in real time, control the amount of the void between the filmformation substrate 200 and the shadow mask 81 more accuratelythroughout the entire film formation substrate 200. This arrangementmakes it possible to reliably maintain the void amount at a desired,uniform value.

Thus, the present embodiment can prevent width variation,mispositioning, and shape change in a vapor deposition film 211 (notshown), such as a pixel pattern, that is deposited through the openings82 of the shadow mask 81. This arrangement consequently makes itpossible to accurately form a high-resolution pattern throughout thefilm formation substrate 200.

The present embodiment, as described above, describes an example caseinvolving void sensors 401 each provided, at a position that is (i)above the film formation substrate 200 and (ii) in the vicinity of themask unit 80, the void sensors being provided in the number of threealong the long side 81 a located at the end upstream in the substratescanning direction and three more along the long side 81 a locateddownstream in the substrate scanning direction. The present embodimentis, however, not limited to such an arrangement.

Even in the case involving, for example, void sensors 401 each provided,as in Embodiment 16 above, at a position that is (i) above the filmformation substrate 200 and (ii) in the vicinity of the mask unit 80,the void sensors being provided in the number of three (at respectiveends of the long side 81 a located downstream in the substrate entrydirection and the middle of the long side) along the long side 81 alocated at the end upstream in the substrate scanning direction, it isclearly possible to control the void amount in real time by, asillustrated in FIG. 61, providing void-sensing transparent regions 201,along the substrate scanning direction, in the region of the filmformation substrate 200 which region faces the void sensors 401.

The embodiments above each mainly describe a case of carrying outdepo-up or depo-down with respect to the film formation substrate 200.The present invention is, however, not limited to such an arrangement.

The present invention may alternatively be arranged, for example, suchthat (i) the vapor deposition source 85 includes a mechanism foremitting vapor deposition particles in a lateral direction and that (ii)such vapor deposition particles are deposited (side deposition) onto thefilm formation substrate 200 in a lateral direction through the shadowmask 81 in a state in which the film formation substrate 200 is stoodvertically in such a manner that the vapor deposition surface (filmformation surface) thereof faces the vapor deposition source 85 side.

The embodiments above each describe and example case in which (i) theorganic EL display device 1 includes a TFT substrate 10 and (ii) anorganic layer is formed on the TFT substrate 10. The present inventionis, however, not limited to such an arrangement. The present inventionmay alternatively be arranged such that (i) the organic EL displaydevice 1 includes not a TFT substrate 10 but, as a substrate on which anorganic layer is to be formed, a passive substrate including no TFT, orthat (ii) the film formation substrate 200 is such a passive substrate.

The embodiments above each describe an example case of, as describedabove, forming an organic layer on a TFT substrate 10. The presentinvention is, however, not limited to such an arrangement. The presentinvention is suitably applicable to a case of forming an electrodepattern instead of an organic layer. The vapor deposition device 50 andvapor deposition method of the present invention are, as describedabove, suitably applicable to, other than the method for producing theorganic EL display device 1, an production method and production devicefor forming a patterned film by vapor deposition.

As described above, the vapor deposition method and vapor depositiondevice of the present invention each carry out vapor deposition by (i)using a mask unit including: a vapor deposition mask that has an openingand that is smaller in area than a vapor deposition region of a filmformation substrate; and a vapor deposition source that has an emissionbole for emitting a vapor deposition particle, the emission hole beingprovided so as to face the vapor deposition mask, the vapor depositionmask and the vapor deposition source being fixed in position relative toeach other, (ii) adjusting an amount of a void between the vapordeposition mask and the film formation substrate, and (iii) moving atleast a first one of the mask unit and the film formation substraterelative to a second one thereof while uniformly maintaining a voidbetween the mask unit and the film formation substrate.

As described above, according to the present invention, the vapordeposition mask and the vapor deposition source are fixed in positionrelative to each other. This makes it possible to carry out vapordeposition by (i) using a vapor deposition mask smaller in area than thevapor deposition region of the film formation substrate and (ii) movingat least a first one of the mask unit and the film formation substraterelative to a second one thereof.

The present invention thus prevents the problem of, for example,self-weight bending and elongation due to a large-sized vapor depositionmask, and consequently makes it possible to not only form a pattern ofan organic layer on a large-sized substrate, but also form such apattern with high positional accuracy and high resolution.

The present invention uses a vapor deposition mask smaller in area thanthe vapor deposition region of the film formation substrate as describedabove. This can reduce or prevent problems caused by a frame for holdinga vapor deposition mask which frame is extremely large and extremelyheavy due to a large-sized vapor deposition mask.

The present invention can carry out vapor deposition by moving at leasta first one of the mask unit and the film formation substrate relativeto a second one thereof while uniformly maintaining the void between themask unit and the film formation substrate, and thus form a vapordeposition film that is uniform in width and film thickness.

The void between the mask unit and the film formation substrate preventsthe film formation substrate from coming into contact with the vapordeposition mask, and thus prevents the film formation substrate frombeing damaged by the vapor deposition mask. The present invention thuseliminates the need to form on the film formation substrate a maskspacer for preventing such damage, and can reduce costs as well.

The vapor deposition method may preferably be arranged such that themask unit further includes a tension mechanism for applying tension tothe vapor deposition mask; and the step (A) involves holding the vapordeposition mask in a state in which the vapor deposition mask is underthe tension.

In other words, the vapor deposition method of the present invention maypreferably be a vapor deposition method for forming, on a film formationsubstrate, a vapor deposition film having a predetermined pattern, thevapor deposition method including the steps of: (A) preparing a maskunit including: a vapor deposition mask that has an opening and that issmaller in area than a vapor deposition region of the film formationsubstrate; a vapor deposition source that has an emission hole foremitting a vapor deposition particle, the emission hole being providedso as to face the vapor deposition mask; and a tension mechanism forapplying tension to the vapor deposition mask, the vapor deposition maskand the vapor deposition source being fixed in position relative to eachother, and (iii) while holding the vapor deposition mask in a state inwhich the vapor deposition mask is under the tension, aligning the maskunit and the film formation substrate with each other so that the vapordeposition mask faces the film formation substrate in a state in whichthe vapor deposition mask is separated from the film formation substrateby a uniform void; and (B) (i) moving at least a first one of the maskunit and the film formation substrate relative to a second one thereofin a state in which the uniform void is maintained between the mask unitand the film formation substrate, and (ii) sequentially depositing thevapor deposition particle.

The vapor deposition method may preferably be arranged such that themask unit further includes a tension mechanism for applying tension inthe vapor deposition mask.

In other words, the vapor deposition device of the present invention isa vapor deposition device for forming, on a film formation substrate, afilm having a predetermined pattern, the vapor deposition deviceincluding: a mask unit provided so as to face the film formationsubstrate and so as to include: vapor deposition mask that has anopening and that is smaller in area than a vapor deposition region ofthe film formation substrate; and a vapor deposition source that has anemission hole for emitting a vapor deposition particle, the emissionhole being provided so as to face the vapor deposition mask, the vapordeposition mask and the vapor deposition source being fixed in positionrelative to each other; and moving means for moving at least a first oneof the mask unit and the film formation substrate relative to a secondone thereof in a state in which a uniform void is provided between themask unit and the film formation substrate, the mask unit including atension mechanism for applying tension to the vapor deposition mask.

The above arrangement, which applies tension to the vapor depositionmask with use of the tension mechanism, can reduce self-weight bendingand thermal expansion of the vapor deposition mask. Further, the abovearrangement can adjust alignment accuracy for the vapor deposition maskby tension in accordance with a situation occurring during vapordeposition (for example, thermal expansion of the vapor deposition maskand/or finishing accuracy of the film formation substrate.

Patent Literature 4 discloses forming a high-resolution vapor depositionpattern on a substrate by (i) holding a metal mask onto a base plate ina state in which the metal mask is under tension with use of a coilspring so that a slit can be maintained in a predetermined shape and(ii) fitting a substrate to the base plate.

The method disclosed in Patent Literature 4, however, closely attaches asubstrate and a metal mask to each other with use of a base plate forvapor deposition as described above, and thus requires adjusting themask before creating a vacuum state in a vacuum vapor deposition device.The above method, as a result, cannot correct a shift in the state (forexample, temperature and substrate finishing) of the metal mask duringvacuum vapor deposition.

In addition, Patent Literature 4 carries out vapor deposition on thevapor deposition region of a substrate with use of a metal mask so sizedas to allow vapor deposition to be carried out with respect to theentire vapor deposition region of the substrate, and thus uses asubstrate with a small vapor deposition region. Parent Literature 4, asa result, uses a metal mask smaller in size than the substrate. In thecase where the substrate is large-sized, the metal mask itself alsoneeds to be large-sized, and the base plate needs to be large-sized aswell. This in turn requires an extremely large and complex device forhandling such a metal mask and substrate, thus making device designdifficult. Further, there remains a problem with safety in handlingduring a production step or a step of, for example, mask replacement.

The present invention, in contrast, poses no such problem as describedabove.

Patent Literature 11 discloses fixing, in the case of using a metal maskas a vapor deposition mask, the metal mask to a mask supporting sectionof a mask support with use of a fixing section mechanism, and furtherdiscloses fixing, during the above step, the metal mask by pulling it inits peripheral direction.

Patent Literature 11, however, merely discloses fixing, when theperiphery of the metal mask is placed along a groove and the metal maskis fixed with use of a restrainer provided on the metal mask, the metalmask in the state in which it is pulled in its peripheral direction.Patent Literature 11 thus fails to disclose a tension mechanism itselffor applying tension to the vapor deposition mask.

In addition, Patent Literature 11 fixes the metal mask to the groovewith use of the restrainer in the end. As a result, Patent Literature11, as in Patent Literature 4, cannot correct a shift in the state (forexample, temperature and substrate finishing) of the metal mask duringvacuum vapor deposition.

In contrast, the present invention is, as described above, arranged suchthat the vapor deposition device itself includes a tension mechanism forapplying tension to the vapor deposition mask and that how tension isapplied to the vapor deposition mask is controlled by the tensionmechanism.

Thus, the present invention can, as described above, (i) reduce orcorrect self-weight bending and thermal expansion of the vapordeposition mask so that a uniform void is maintained between the maskunit and the film formation substrate, and further (ii) activelycontrol, for example, pixel mispositioning with use of the tensionmechanism. The tension mechanism, which is provided to the mask unit,can also be used as an auxiliary mechanism for a real-time alignment.

The vapor deposition method of the present invention may preferably bearranged such that the mask unit is placed in a film growing chamber sothat the deposition of the vapor deposition particle is carried outinside the film growing chamber; a first absolute-alignment marker isprovided to the vapor-deposition mask; a second absolute-alignmentmarker is provided at a position in either the mask unit or the filmgrowing chamber which position faces the vapor deposition mask; and thestep (A) involves relatively aligning the first and secondabsolute-alignment markers with each other so as to place the vapordeposition mask at a predetermined absolute position.

The above arrangement can place the vapor deposition mask at an absoluteposition, and thus accurately fix the respective positions of the vapordeposition source and the vapor deposition mask relative to each other.In other words, the above arrangement can accurately place the vapordeposition mask in a region (vapor deposition area) onto which vapordeposition particles from the vapor deposition source are to bedeposited.

The above arrangement can thus narrow the vapor deposition region, andeliminates the need for a design to provide a wide vapor depositionregion so that no problem arises even if the vapor deposition mask isslightly mispositioned relative to the vapor deposition area. The abovearrangement can consequently improve efficiency of material use.

The vapor deposition method may preferably be arranged such that thefirst absolute-alignment marker includes a plurality ofabsolute-alignment markers arranged in parallel to a direction (relativemovement direction) of the relative movement; and the vapor depositionmask is placed at the absolute position by relatively aligning (i) atleast one of the plurality of absolute-alignment markers with (ii) thesecond absolute-alignment marker provided to the mask unit or the filmgrowing chamber.

The above arrangement allows the relative movement direction (that is,the scanning direction) to be accurately parallel to a side (openingend) of each opening of the vapor deposition mask which side needs toextend in a direction parallel to the scanning direction.

The vapor deposition method may preferably be arranged such that thefilm formation substrate includes, at a position therein which positionlies upstream from the vapor deposition region along a direction of therelative movement, a first alignment marker for use in alignment betweenthe vapor deposition mask and the film formation substrate; the vapordeposition mask includes, at an end section thereof which end sectionfirst meets the first alignment marker during the relative movement, asecond alignment marker for use in the alignment between the vapordeposition mask and the film formation substrate; and the vapordeposition mask and the film formation substrate are aligned with eachother by relatively aligning (i) the second alignment marker with (ii)the first alignment marker at the position during the relative movement.

The above arrangement can reliably correct the respective positions ofthe mask unit and the film formation substrate before the film formationsubstrate enters a region (vapor deposition area) in which vapordeposition particles from the vapor deposition source are deposited.

The vapor deposition method may preferably be arranged such that thevapor deposition mask includes a plurality of alignment markers for usein alignment between the vapor deposition mask and the film formationsubstrate which plurality of alignment markers are arranged in parallelto a direction of the relative movement; the film formation substrateincludes a plurality of alignment markers for use in the alignmentbetween the vapor deposition mask and the film formation substrate whichplurality of alignment markers are arranged in parallel to the directionof the relative movement; and the vapor deposition mask and the filmformation substrate are aligned with each other by relatively aligning(i) the plurality of alignment markers included in the vapor depositionmask with (ii) the plurality of alignment markers included in the filmformation substrate.

The above arrangement, when carrying out an alignment between the vapordeposition mask and the film formation substrate, allows the relativemovement direction (that is, the scanning direction) to be accuratelyparallel to a side (opening end) of each opening of the vapor depositionmask which side needs to extend in a direction parallel to the scanningdirection.

The vapor deposition method may preferably be arranged such that, whenthe tension is applied to the vapor deposition mask, the tension isapplied to the vapor deposition mask in either an obliquely upwarddirection, or an obliquely down word direction by using, as a fulcrum,an abutting member abutting either an upper surface or lower surface ofthe vapor deposition mask.

The above arrangement allows tension to be easily applied to the vapordeposition mask by applying tension to the vapor deposition mask ineither an obliquely upward direction or an obliquely downward directionby using, as a fulcrum, an abutting member, such as a supporting member(which is fixed and thus does not move) for supporting the vapordeposition mask, that abuts either an upper surface or lower surface ofthe vapor deposition mask.

The above arrangement uses, as a fulcrum, an abutting member abuttingeither the upper surface or lower surface of the vapor deposition mask,and can thus easily and accurately correct parallelism between the vapordeposition mask and the film formation substrate (that is, parallelismbetween a mask surface of the vapor deposition mask and a substratesurface of the film formation substrate).

In particular, it is easier and more accurate to (i) correct parallelismbetween the vapor deposition mask and the film formation substrate bycorrecting parallelism between the abutting member and the filmformation substrate than to (ii) precisely correct parallelism betweenthe vapor deposition mask and the film formation substrate with use ofthe tension mechanism itself that moves in the back-and-forth directionand the left-and-right direction relative to the vapor deposition mask.

Further, since the correction of parallelism between the abutting memberand the film formation substrate governs the correction of parallelismbetween the vapor deposition mask and the film formation substrate, itis unnecessary to, when the vapor deposition mask is replaced, preciselyadjust the correction of parallelism between the vapor deposition maskand the film formation substrate. The above arrangement thus facilitatesreplacement of the vapor deposition mask.

The vapor deposition method may preferably be arranged such that thevapor deposition mask has a fixed end; and the tension is applied to thevapor deposition mask in a single direction with use of the tensionmechanism.

The above arrangement generates only tension applied to the vapordeposition mask in a single axis direction. The above arrangement canthus prevent torsion in the vapor deposition mask, and allows stableoperation.

The vapor deposition method may preferably be arranged such that thetension mechanism includes clamps at respective corner sections of thevapor deposition mask; and the tension is applied to the vapordeposition mask at the corner sections by applying tension to theclamps.

The above arrangement allows tension to be applied to the vapordeposition mask in various directions, and thus allows a fine positionadjustment. The above arrangement can consequently improve alignmentaccuracy, and in turn further improve vapor deposition accuracy.

The vapor deposition method may preferably be obtained such that thestep (B) involves adjusting respective positions of the film formationsubstrate and the vapor deposition mask relative to each other whilecarrying out the deposition of the vapor deposition particle.

In other words, the vapor deposition method of the present invention maypreferably be a vapor deposition method for forming, on a film formationsubstrate, vapor deposition film having a predetermined pattern, thevapor deposition method including the steps of: (A) (i) preparing a maskunit including: a vapor deposition mask that has an opening and that issmaller in area than a vapor deposition region of the film formationsubstrate; and a vapor deposition source that has an emission hole foremitting a vapor deposition particle, the emission hole being providedso as to face the vapor deposition mask, the vapor deposition mask andthe vapor deposition source being fixed in position relative to eachother, and (ii) aligning the mask unit and the film formation substratewith each other so that the vapor deposition mask faces the filmformation substrate in a state in which the vapor deposition mask isseparated from the film formation substrate by a uniform void; and (B)(i) moving at least a first one of the mask unit and the film formationsubstrate relative to a second one thereof in a state in which theuniform void is maintained between the vapor deposition mask and thefilm formation substrate, and (ii) sequentially depositing the vapordeposition particle through the opening of the vapor deposition maskonto the vapor deposition region of the film formation substrate, thestep (B) involving adjusting respective positions of the film formationsubstrate and the vapor deposition mask relative to each other whilecarrying out the deposition of the vapor deposition particle.

For the above arrangement, the vapor deposition device may preferablyfurther include: alignment observing means provided so as to be adjacentto the film formation substrate and the vapor deposition mask and so asto be fixed in position relative to the vapor deposition mask; andadjusting means for adjusting respective positions of the film formationsubstrate and the vapor deposition mask relative to each other.

In other words, the vapor deposition device of the present invention isa vapor deposition device for forming, on a film formation substrate, afilm having a predetermined pattern, the vapor deposition deviceincluding: a mask unit provided so as to face the film formationsubstrate and so as to include: a vapor deposition mask that has anopening and that is smaller in area than a vapor deposition region ofthe film formation substrate; and a vapor deposition source that has anemission hole for emitting a vapor deposition particle, the emissionhole being provided so as to face the vapor deposition mask, the vapordeposition mask and the vapor deposition source being fixed in positionrelative to each other; moving means for moving at least a first one ofthe mask unit and the film formation substrate relative to a second onethereof in a state in which a uniform void is provided between the maskunit and the film formation substrate; alignment observing meansprovided so as to be adjacent to the film formation substrate and thevapor deposition mask and so as be fixed in position relative to thevapor deposition mask; and adjusting means for adjusting respectivepositions of the film formation substrate and the vapor deposition maskrelative to each other.

No absolute reliability is ensured in mechanical accuracy of moving(scanning) the film formation substrate or the mask unit relative to theother. Adjusting the respective positions of the film formationsubstrate and the vapor deposition mask relative to each other whilecarrying out vapor deposition, however, makes it possible toappropriately maintain the positional relationship between the filmformation substrate and the vapor deposition mask relative to each otherduring vapor deposition. Thus, the arrangements above each make itpossible to form a pattern with high positional accuracy and highresolution even with use of a large-sized substrate as film formationsubstrate.

Further, the arrangements above each eliminate the need to stop a scanfor an alignment between the film formation substrate and the vapordeposition mask, and can thus form a vapor deposition film with higherefficiency.

In particular, recognition accuracy can be improved by, as describedabove, observing the respective positions of the film formationsubstrate and the vapor deposition mask relative to each other by using,as alignment observing means, alignment observing means provided so asto be adjacent to the film formation substrate and the vapor depositionmask and so as to be fixed in position relative to the vapor depositionmask. The arrangements above thus each make it possible to carry out analignment with higher precision.

Since the use of the alignment observing means can improve recognitionaccuracy, the vapor deposition method may preferably be arranged suchthat the vapor deposition mask includes a second alignment marker foruse in alignment between the vapor deposition mask and the filmformation substrate; the film formation substrate includes a firstalignment marker for use in the alignment between the vapor depositionmask and the film formation substrate; and the step (B) involves, whilecarrying out the deposition of the vapor deposition particle, adjustingthe respective positions of the film formation substrate and the vapordeposition mask relative to each other by (i) observing respectivepositions of the second alignment marker and the first alignment markerrelative to each other with use of alignment observing means provided soas to be adjacent to the film formation substrate and the vapordeposition mask and so as to be fixed in position relative to the vapordeposition mask, and (ii) adjusting the respective positions of thesecond alignment marker and the first alignment marker relative to eachother on a basis of a result of the observation.

The above arrangement allows an alignment to be carried out in real timewith higher precision.

The vapor deposition method may preferably be arranged such that thefirst alignment marker and the second alignment marker are each providedoutside a vapor deposition region for the vapor deposition particleemitted from the vapor deposition source; the second alignment marker isan alignment opening; and the step (B) involves observing, though thealignment opening, the position of the first alignment marker relativeto the second alignment marker with use of the alignment observingmeans.

The above arrangement, (i) with use of the alignment observing means and(ii) through the alignment opening provided to the vapor depositionmask, observes an alignment marker provided to the film formationsubstrate for use in the alignment between the vapor deposition mask andthe film formation substrate. The above arrangement thus allows a moreaccurate alignment, and in turn allows a more accurate vapor depositioncontrol.

The vapor deposition method may preferably be arranged such that thealignment observing means emits spot light to the first alignment markerthrough the alignment opening and, on a basis of an intensity ofreflection of the spot light, observes the position of the firstalignment marker relative to the second alignment marker.

The above arrangement can, without image recognition, more accuratelyobserve and detect a relative position of the alignment marker for usein the alignment between the vapor deposition mask and the filmformation substrate. Further, the above arrangement can carry out theabove processes with high precision and yet at higher speed. The abovearrangement is thus suitably applicable in a case where at least a firstone of the mask unit and the film formation substrate is moved relativeto a second one thereof rapidly.

The vapor deposition method may preferably be arranged such that thefilm formation substrate includes a first alignment marker for use inalignment between the vapor deposition mask and the film formationsubstrate; and the step (B) involves, while carrying out the depositionof the vapor deposition particle, adjusting respective positions of thefilm formation substrate and the vapor deposition mask relative to eachother by (i) observing respective positions of the first alignmentmarker and the vapor deposition film relative to each other with use ofalignment observing means and (ii) adjusting the respective positions ofthe first alignment marker and the vapor deposition film relative toeach other on a basis of a result of the observation.

The above arrangement can determine mispositioning of a vapor depositionfilm actually deposited on the film formation substrate, and thus carryout a more accurate alignment.

The vapor deposition method may preferably be arranged such that thealignment observing means optically observes, in such a manner as tomake no contact with the first alignment marker or the vapor depositionfilm, the respective positions of she first alignment marker and thevapor deposition film relative to each other.

The means for observing the positional relationship between (i) thealignment marker, provided to the film formation substrate for analignment between the vapor deposition mask and the film formationsubstrate, and (ii) the vapor deposition film formed to have thepredetermined pattern can be alignment observing means for carrying outan optical observation such as observation of photoluminesence lightemission, observation of the intensity of reflection, observation oftransmission intensity, and simple image recognition.

The vapor deposition method may preferably be arranged such that thefirst alignment marker is made of a material that reflects or absorbsultraviolet light and is provided inside a vapor deposition region forthe vapor deposition particle emitted from the vapor deposition source;the vapor deposition particle is made of a material that emits light byphotoluminesence; the step (B) involves depositing the vapor depositionparticle onto the first alignment marker; and the alignment observingmeans emits ultraviolet light to the first alignment marker and thevapor deposition film so as to observe the respective positions of thevapor deposition film emitting light by photoluminesence due to theultraviolet light and the first alignment marker.

The above arrangement can directly determine mispositioning of a vapordeposition film actually deposited on the film formation substrate, andthus carry out a more accurate alignment.

The vapor deposition method may preferably be arranged such that thefirst alignment marker includes in itself a plurality of openings; andthe alignment observing means observes the respective positions of thefirst alignment marker and the vapor deposition film relative to eachother on a basis of a ratio in fluorescence intensity among theplurality of openings.

The above arrangement ca, without image recognition, more accuratelyobserve and detect a relative position of the alignment marker for usein the alignment between the vapor deposition mask and the filmformation substrate. Further, the above arrangement can carry out theabove processes with high precision and yet at higher speed. The abovearrangement is thus suitably applicable in a case where at least a firstone of the mask unit and the film formation substrate is moved relativeto a second one thereof rapidly.

The vapor deposition method may preferably be arranged such that thefirst alignment marker is provided in a first region of the filmformation substrate, the first region being a region in which the atleast the first one of the mask unit and the film formation substrate ismoved relative to the second one thereof, from end to end along adirection of the relative movement.

Continuously observing the above alignment marker while carrying outvapor deposition makes it possible to not only carry out an alignmentbetween the vapor deposition mask and the film formation substrate withhigh precision, but also accurately determine the amount of scanning thefilm formation substrate. The above arrangement thus makes it possibleto carry out a more accurate vapor deposition control.

The vapor deposition method may preferably be arranged such that thefirst alignment marker is provided discontinuously.

According to the above arrangement, the alignment marker is provideddiscontinuously, which causes the intensity of reflection to changediscontinuously.

Thus, counting the cycle of the above change makes it possible toaccurately determine the amount of scanning the film formationsubstrate. The above arrangement thus makes it possible to carry out amore accurate vapor deposition control.

The vapor deposition method may preferably be arranged such that thefirst alignment marker is discontinuous at an interval that variesaccording to a position in the film formation substrate.

The above arrangement, as described above, intentionally varies,according to the position in the film formation substrate, thediscontinuous cycle of the alignment marker provided to the filmformation substrate for use in the alignment between the vapordeposition mask and the film formation substrate. The above arrangementthus makes it possible to more accurately determine the position (scanamount) of the film formation substrate.

The vapor deposition method may preferably be arranged such that, thestep (A) involves adjusting the amount of the void between the vapordeposition mask and the film formation substrate to a uniform amount by(i) measuring the amount of the void between the vapor deposition maskand the film formation substrate with use of a void sensor and (ii) on abasis of the measured void amount, moving, along an axis direction thatconnects the vapor deposition mask and the film formation substrate andthat is perpendicular to the vapor deposition mask and the filmformation substrate, at least one of (a) a portion of the mask unitwhich portion includes at least the vapor deposition mask or an entiretyof the mask unit and (b) the film formation substrate.

For the above arrangement, the vapor deposition device may preferablyfurther include: at least one void sensor for measuring an amount of avoid between the vapor deposition mask and the film formation substrate.

Although the vapor deposition mask and the vapor deposition source arefixed in position relative to each other, there is a minute operatingregion due to a void amount adjustment process.

Measuring the amount of the void between the vapor deposition mask andthe film formation substrate with use of a void sensor as describedabove makes it possible to accurately determine the amount of the voidbetween the vapor deposition mask and the film formation substrate. Theabove arrangement can thus accurately control the void amount, andmaintain the void amount at a desired, uniform value.

Thus, the above arrangement can prevent width variation, mispositioning,and shape change in a vapor deposition film that is deposited throughthe opening of the vapor deposition mask. The above arrangementconsequently makes it possible to accurately form a high-resolutionpattern through out the film formation substrate.

In the case where the vapor deposition device includes a plurality ofvoid sensors, it is possible to more accurately determine thedistribution of the amount of the void between the vapor deposition maskand the film formation substrate. The above arrangement thus makes itpossible to more accurately control the void amount.

The vapor deposition method may preferably be arranged such that thestep (B) involves (i) measuring the amount of the void between the vapordeposition mask and the film formation substrate with use of the voidsensor and (ii) carrying out the deposition of the vapor depositionparticle while adjusting the amount of the void between the vapordeposition mask and the film formation substrate to the uniform amounton a basis of the measured void amount.

Adjusting the void amount in real time while carrying out vapordeposition as described above makes it possible to reliably maintain thevoid amount at a fixed, uniform value. The above arrangement thus makesit possible to carry out patterning with higher accuracy.

The vapor deposition method may preferably be arranged such that thevoid sensor is an optical void sensor for measuring the amount of thevoid between the vapor deposition mask and the film formation substrateby means of transmission through the film formation substrate.

The void sensor may be a void sensor of another type such as anelectrostatic capacity type and an eddy current type. Such a void sensorof another type, however, basically measures the void between an objectand itself, the object needing to be a conductor. The use of such a voidsensor is subject to a restriction as a result.

The void sensor is thus desirably an optical void sensor as describedabove. The use of the void sensor makes it possible to measure theamount of the void between the vapor deposition mask and the filmformation substrate through the film formation substrate.

The vapor deposition method may preferably be arranged such that thevoid sensor includes a plurality of void sensors arranged in a directionperpendicular to a direction of the relative movement; the filmformation substrate includes a plurality of transparent regions formeasuring the void amount with use of the void sensors, the transparentregions extending along the direction of the relative movement and beingarranged along the direction perpendicular to the direction of therelative movement; and the step (B) involves measuring the amount of thevoid between the vapor deposition mask and the film formation substrateby means of the transmission through the film formation substrate withuse of the void sensors facing the transparent regions.

Including a plurality of void sensors as described above makes itpossible to determine the distribution of the void amount andconsequently control the void amount more precisely to a uniform value.

The vapor deposition method may preferably be arranged such that thevoid amount is adjusted by moving, along the axis direction thatconnects the vapor deposition mask and the film formation substrate andthat is perpendicular to the vapor deposition mask and the filmformation substrate, the at least one of (a) the portion of the maskunit which portion includes at least the vapor deposition mask or theentirety of the mask unit and (b) the film formation substrate, with useof an actuator.

For the above arrangement, the vapor deposition device may preferablyfurther include: an actuator for adjusting an amount of a void betweenthe vapor deposition mask and the film formation substrate by moving,along an axis direction that connects the vapor deposition mask and thefilm formation substrate and that is perpendicular to the vapordeposition mask and the film formation substrate, at least one of (a) aportion of the mask unit which portion includes at least the vapordeposition mask or an entirety of the mask unit and (b) the filmformation substrate.

The vapor deposition device may preferably further include: a voiddifference amount computing section for calculating an amount of adifference between (i) the void amount measured by the at least one voidsensor and (ii) a preset amount of the void between the vapor depositionmask and the film formation substrate; a avoid difference correctionamount deriving section for deriving, from the void difference amountcalculated by the void difference amount computing section, a correctionvalue for overcoming the difference; and an actuator drive controlsection for, on a basis of a void difference correction amount derivedby the void difference correction amount deriving section, moving theactuator along the axis direction so that the void between the vapordeposition mask and the film formation substrate is uniform.

The use of the actuator to adjust the void amount as described abovemakes it possible to finely adjust the void and to easily and accuratelyadjust the void amount.

The vapor deposition method may preferably be arranged such that thestep (B) involves sequentially depositing the vapor deposition particleonto the vapor deposition region of the film formation substrate whilecontinuously moving the at least the first one of the mask unit and thefilm formation substrate relative to the second one thereof in the vapordeposition region of the film formation substrate.

Carrying out vapor deposition while continuously moving at least a firstone of the mask unit and the film formation substrate relative to asecond one thereof as described above averages the flying distributionof the vapor deposition particle along the substrate scanning directioneven in a case where the distribution extends along the scanningdirection. The above arrangement thus makes it possible to form a vapordeposition film having a pattern that is uniform over the substratesurface.

The vapor deposition method may be arranged such that the step (B)involves sequentially depositing the vapor deposition particle onto thevapor deposition region of the film formation substrate by repeating (i)a step for moving the at least the first one of the mask unit and thefilm formation substrate relative to the second one thereof so as toscan the at least the first one of the mask unit and the film formationsubstrate and (ii) a step for stopping the scan and depositing the vapordeposition particle onto the vapor deposition region of the filmformation substrate.

The vapor deposition method may preferably be arranged such that thevapor deposition mask is a rectangular vapor deposition mask having, (i)along a short-axis direction thereof, a first side that is shorter thana width of a first side of the vapor deposition region of the filmformation substrate which first side of the vapor deposition regionextends along the short-axis direction of the vapor deposition mask and(ii) along a long-axis direction of the vapor deposition mask, a secondside that is longer than a width of a second side of the vapordeposition region of the film formation substrate which second side ofthe vapor deposition region extends along the second side of the vapordeposition mask.

The above arrangement makes it possible to form alignment markersections at, for example, respective ends of the vapor deposition maskwhich ends are opposite to each other along the long-side direction ofthe vapor deposition mask. The above arrangement, thus makes it possibleto carry out an alignment easily and more precisely.

The vapor deposition method may preferably be arranged such that thestep (B) involves reciprocating the at least the first one of the maskunit and the film formation substrate.

Conventional art has had the necessity to, in the case where, forexample, a crucible is used as a vapor deposition source, control thefilm thickness by means of temperature in order to change the vapordeposition rate. This has led to, for example, (i) the problem that ittakes a long time to stabilize temperature and/or (ii) the problem thata variation in temperature tends to cause a variation in vapordeposition rate.

The above arrangement can, in contrast, control the film thickness onthe basis of, not a temperature control, but the number of reciprocatingmotions. The above arrangement is thus free from the above problems.

In particular, in the case where the above reciprocating movement iscarried out to subsequently deposit the vapor deposition particle ontothe vapor deposition region of the film formation substrate whilecontinuously moving at least a first one of the mask unit and the filmformation substrate relative to a second one thereof in the vapordeposition region of the film formation substrate as described above,the movement of the film formation substrate is stopped only momentarilywhen the substrate scanning direction is reversed, and vapor depositionis carried out even while the film formation substrate is in motion. Theabove arrangement thus does not require a long tact time.

The vapor deposition method may preferably be arranged such that thestep (B) involves alternating (i) the relative movement along one sideof the vapor deposition region of the film formation substrate and (ii)the relative movement along another side of the vapor deposition regionof the film formation substrate, the another side being orthogonal tothe one side.

The above arrangement makes it possible to form a film formation pattern(vapor deposition film) efficiently throughout the entire vapordeposition region of the film formation substrate with use of a vapordeposition mask that is smaller in area than the vapor deposition regionof the film formation substrate.

In particular, in the case where the above relative movement is carriedout to subsequently deposit the vapor deposition particle onto the vapordeposition region of the film formation substrate while continuouslymoving at least a first one of the mask unit and the film formationsubstrate relative to a second one thereof in the vapor depositionregion of the film formation substrate as described above, the movementof the film formation substrate is stopped only momentarily when thesubstrate scanning direction is switched, and vapor deposition iscarried out even while the film formation substrate is in motion. Theabove arrangement thus does not require a long tact time.

The vapor deposition method may preferably be arranged such that thestep (B) involves stopping the emission of the vapor deposition particlefrom the vapor deposition source for a second region of the filmformation substrate, the second region requiring no deposition of thevapor deposition particle.

The above arrangement, as described above, stops the emission of thevapor deposition particle from the vapor deposition source for a secondregion of the film formation substrate, the second region requiring nodeposition of the vapor deposition particle. The above arrangement canthus prevent vapor deposition on a portion for which vapor deposition isunnecessary (that is, a non vapor deposition region).

The present invention uses a vapor deposition mask smaller in area thanthe vapor deposition region of the film formation substrate as describedabove, and fixes the vapor deposition mask and the vapor depositionsource in position relative to each other. Thus, even in the case wherethe vapor deposition mask and the vapor deposition source include aplurality of openings and emission holes respectively, the presentinvention (i) eliminates the need to, as conventional, carry out OFF/OFFcontrol of a part of a plurality of vapor deposition sources (foremission holes) and (ii) simply needs to stop the mission of the vapordeposition particle from the vapor deposition source (that is, theemission of the vapor deposition particle from all the emission holes)for a non vapor deposition region. The present invention thus requiresno complicated mechanism and consequently allows ON/OFF control to beeasily carried out.

The vapor deposition method may preferably be arranged such that themask unit is provided so that the emission hole faces the opening of thevapor deposition mask in a one-to-one correspondence.

The above arrangement can reduce the number of vapor depositionparticles adhered to a non-opening section of the vapor deposition mask,and thus improve efficiency of material use.

The vapor depositing method may preferably be arranged such that thestep (A) involves aligning the mask unit and the film formationsubstrate with each other so that the mask unit is placed above the filmformation substrate; and the step (B) involves sequentially depositingthe vapor deposition particle onto the vapor deposition region of thefilm formation substrate by emitting the vapor deposition particledownward from the vapor deposition source.

The above method places the film formation substrate below the maskunit, and thus simply requires holding the film formation substrate withuse of, for example, a substrate stage or a roller to only an extendthat no self-weight bending is caused to the film formation substrate.The above method can consequently hold the film formation substrateeasily and safely in a state in which the film formation substrate ismaintained at a fixed distance from the vapor deposition mask.

The above predetermined pattern can be of an organic layer for anorganic electroluminescent device. The above vapor deposition method issuitably applicable to production of an organic electroluminescentdevice.

The present invention is not limited to the description of theembodiments above, but may be altered in various ways by a skilledperson within the scope of the claims. Any embodiment based on a propercombination of technical means disclosed in different embodiments isalso encompassed in the technical scope of the present invention.

INDUSTRIAL APPLICABILITY

The vapor deposition device and vapor deposition method of the presentinvention are suitably applicable to, for example, a device and methodfor producing an organic EL display device which are used in a processof, for example, discriminative application formation of an organiclayer in an organic EL display device.

REFERENCE SIGNS LIST

-   -   1 organic EL display device    -   2 pixel    -   2R, 2G, 2B sub-pixel    -   10 TFT substrate (film formation substrate)    -   20 organic EL element    -   21 first electrode    -   22 hole injection layer/hole transfer layer (organic layer)    -   23R, 23G, 23B luminous layer (organic layer)    -   24 electron transfer layer (organic layer)    -   25 election injection layer (organic layer)    -   26 second electrode    -   27 hole injection layer (organic layer)    -   28R, 28G, 28B hole transfer layer    -   50 vapor deposition device    -   60 vacuum chamber (film growing chamber)    -   70 substrate moving mechanism (adjusting means)    -   71 substrate holding member    -   72 motor    -   80 mask unit    -   80R, 80G, 80B mask unit    -   81 shadow mask    -   81R, 81G, 81B shadow mask    -   81 a long side    -   81 b short side    -   82 opening    -   83 alignment marker section    -   84 alignment marker    -   84R, 84G, 84B alignment marker    -   84 a first opening (alignment marker)    -   84 b second opening (alignment marker)    -   85 vapor deposition source    -   86 emission hole    -   87 mask holding member    -   88 mask tension mechanism (tension mechanism; adjusting means)    -   89 shutter    -   90 image sensor (alignment observing means)    -   100 control circuit    -   101 image detecting section    -   102 computing section    -   103 motor drive control section    -   104 vapor deposition ON/OFF control section    -   105 shutter drive control section    -   110 absolute-alignment marker (alignment marker for an absolute        alignment)    -   111 alignment marker (alignment marker for an absolute        alignment)    -   112 alignment marker (alignment marker for an absolute        alignment)    -   113 opening    -   120 absolute alignment reference marker (alignment marker for an        absolute alignment)    -   130 mask clamp    -   141 mask supporting section    -   142 movable section    -   143 fixing section    -   144 mask fixing stand    -   150 image sensor    -   161 image detecting section    -   162 computing section    -   163 tension control section    -   170 alignment sensor (alignment observing means)    -   171 laser spot    -   180 film thickness sensor    -   190 alignment sensor (alignment observing means)    -   191 ultraviolet light emitting device    -   192 detector    -   200 film formation substrate    -   201 transparent region (void-sensing transparent region)    -   202 a, 202 b TFT circuit formation region (vapor deposition        region)    -   210 vapor deposition region    -   210 a long side    -   210 b short side    -   211 vapor deposition film    -   220 alignment marker section    -   221 alignment marker    -   221R, 221G, 221B alignment marker    -   222 alignment marker    -   222 a opening    -   230 control circuit    -   231 detecting section    -   232 correction amount calculating section    -   233 mask drive control section    -   234 substrate drive control section    -   235 vapor deposition ON/OFF control section    -   236 shutter dive control section    -   237 motor    -   240 mask unit moving mechanism (adjusting means)    -   241 motor    -   251 film thickness difference amount calculating section    -   252 correction amount calculating section    -   253 vapor deposition control section    -   260 heater    -   271 image detecting section    -   272 detecting section    -   273 vapor deposition ON/OFF control section    -   280 control circuit    -   281 image detecting section    -   282 detecting section    -   283 vapor deposition ON/OFF control section    -   290 control circuit    -   291 detecting section    -   292 vapor deposition ON/OFF control section    -   410 control circuit    -   411 void difference amount calculating section    -   412 void difference correction amount deriving section    -   413 actuator drive control section

The invention claimed is:
 1. A vapor deposition method for producing anorganic EL panel, the vapor deposition method comprising the steps of:(A) (i) preparing a mask unit including: a vapor deposition mask thathas an opening and that is smaller in area than a vapor depositionregion of the film formation substrate, wherein the vapor depositionmask includes, outside the opening of the vapor deposition mask, analignment marker for use in the alignment between the vapor depositionmask and the film formation substrate; and a vapor deposition sourcethat has an emission hole for emitting a vapor deposition particle, theemission hole being provided so as to face the vapor deposition mask,the vapor deposition mask and the vapor deposition source being fixed inposition relative to each other, and (ii) aligning the mask unit and thefilm formation substrate with each other by adjusting an amount of avoid between the vapor deposition mask and the film formation substrateso that the vapor deposition mask faces the film formation substrate ina state in which the vapor deposition mask is separated from the filmformation substrate by a uniform void; and (B) (i) moving at least afirst one of the mask unit and the film formation substrate relative toa second one thereof with use of a motor driver configured to move, bydriving a motor, at least the first one of the mask unit and the filmformation substrate while maintaining the uniform void between the maskunit and the film formation substrate, and (ii) sequentially depositingthe vapor deposition particle through the opening of the vapordeposition mask onto the vapor deposition region of the film formationsubstrate, the mask unit further including: a tension mechanism forapplying tension to the vapor deposition mask in either an obliquelyupward direction or an obliquely downward direction by using, as afulcrum, an abutting member abutting either an upper surface or lowersurface of the vapor deposition mask, the step (A) involving adjustingrespective positions of the film formation substrate and the vapordeposition mask relative to each other with use of (I) alignmentobserving means provided so as to be adjacent to the film formationsubstrate and the vapor deposition mask and so as to be fixed inposition relative to the vapor deposition mask and (II) an adjustingapparatus including the motor driver, the tension mechanism, a voidsensor configured to measure an amount of a void between the vapordeposition mask and the film formation substrate, and an actuatorconfigured to move, along an axis direction that connects the vapordeposition mask and the film formation substrate and that isperpendicular to the vapor deposition mask and the film formationsubstrate, at least one of (a) a portion of the mask unit which portionincludes at least the vapor deposition mask or an entirety of the maskunit and (b) the film formation substrate, and holding the vapordeposition mask in a state in which the vapor deposition mask is under atension applied by the tension mechanism.
 2. The vapor deposition methodaccording to claim 1, wherein: the mask unit is placed in a film growingchamber so that the deposition of the vapor deposition particle iscarried out inside the film growing chamber; a first absolute-alignmentmarker is provided to the vapor deposition mask; a secondabsolute-alignment marker is provided at a position in either the maskunit or the film growing chamber which position faces the vapordeposition mask; and the step (A) involves relatively aligning the firstand second absolute-alignment markers with each other so as to place thevapor deposition mask at a predetermined absolute position.
 3. The vapordeposition method according to claim 2, wherein: the firstabsolute-alignment marker includes a plurality of absolute-alignmentmarkers arranged in parallel to a direction of the relative movement;and the vapor deposition mask is placed at the absolute position byrelatively aligning (i) at least one of said plurality ofabsolute-alignment markers with (ii) the second absolute-alignmentmarker provided to the mask unit or the film growing chamber.
 4. Thevapor deposition method according to claim 1, wherein: the filmformation substrate includes, at a position therein which position liesoutside the vapor deposition region along a direction in which at leastthe first one of the mask unit and the film formation substrate is movedrelative to the second one thereof, an alignment marker for use inalignment between the vapor deposition mask and the film formationsubstrate; said alignment marker included in the vapor deposition maskfor use in the alignment between the vapor deposition mask and the filmformation substrate is provided at an end section of the vapordeposition mask which end section first meets, while at least the firstone of the mask unit and the film formation substrate is moved relativeto the second one thereof, the alignment marker included in the filmformation substrate for use in the alignment between the vapordeposition mask and the film formation substrate; and the vapordeposition mask and the film formation substrate are aligned with eachother by relatively aligning (i) said alignment marker included in thevapor deposition mask with (ii) said alignment marker included in thefilm formation substrate at the position before the film formationsubstrate enters a region in which the vapor deposition particle fromthe vapor deposition source is deposited while at least the first one ofthe mask unit and the film formation substrate is moved relative to thesecond one thereof.
 5. The vapor deposition method according to claim 1,wherein: said alignment marker includes a plurality of alignment markersarranged in parallel to a direction in which at least the first one ofthe mask unit and the film formation substrate is moved relative to thesecond one thereof; the film formation substrate includes a plurality ofalignment markers for use in the alignment between the vapor depositionmask and the film formation substrate which plurality of alignmentmarkers are arranged in parallel to the direction in which at least thefirst one of the mask unit and the film formation substrate is movedrelative to the second one thereof; and the vapor deposition mask andthe film formation substrate are aligned with each other by relativelyaligning (i) the plurality of alignment markers included in the vapordeposition mask with (ii) the plurality of alignment markers included inthe film formation substrate.
 6. The vapor deposition method accordingto claim 1, wherein: the vapor deposition mask has a fixed end; and thetension is applied to the vapor deposition mask in a single directionwith use of the tension mechanism.
 7. The vapor deposition methodaccording to claim 1, wherein: the tension mechanism includes clamps atrespective corner sections of the vapor deposition mask; and the tensionis applied to the vapor deposition mask at the corner sections byapplying tension to the clamps.
 8. The vapor deposition method accordingto claim 1, wherein: the step (B) involves adjusting respectivepositions of the film formation substrate and the vapor deposition maskrelative to each other while carrying out the deposition of the vapordeposition particle.
 9. The vapor deposition method according to claim8, wherein: the film formation substrate includes an alignment markerfor use in the alignment between the vapor deposition mask and the filmformation substrate; the step (B) involves, while carrying out thedeposition of the vapor deposition particle, adjusting the respectivepositions of the film formation substrate and the vapor deposition maskrelative to each other by (i) observing respective positions of saidsecond alignment marker included in the vapor deposition mask for use inthe alignment between the vapor deposition mask and said alignmentmarker included in the film formation substrate for use in the alignmentbetween the vapor deposition mask relative to each other with use of thealignment observing means, and (ii) adjusting the respective positionsof said second alignment marker included in the vapor deposition maskfor use in the alignment between the vapor deposition mask and saidfirst alignment marker included in the film formation substrate for usein the alignment between the vapor deposition mask relative to eachother on a basis of a result of the observation; said alignment markerincluded in the film formation substrate for use in the alignmentbetween the vapor deposition mask and said alignment marker included inthe vapor deposition mask for use in the alignment between the vapordeposition mask are each provided outside a vapor deposition region forthe vapor deposition particle emitted from the vapor deposition source;said alignment marker included in the vapor deposition mask for use inthe alignment between the vapor deposition mask is an alignment opening;and the step (B) involves observing, through said alignment opening, theposition of said alignment marker included in the film formationsubstrate for use in the alignment between the vapor deposition maskrelative to said alignment marker included in the vapor deposition maskfor use in the alignment between the vapor deposition mask with use ofthe alignment observing means, wherein the alignment observing meansemits spot light to said alignment marker included in the film formationsubstrate for use in the alignment between the vapor deposition maskthrough said alignment opening and, on a basis of an intensity ofreflection of the spot light, observes the position of said alignmentmarker included in the film formation substrate for use in the alignmentbetween the vapor deposition mask relative to said alignment markerincluded in the vapor deposition mask for use in the alignment betweenthe vapor deposition mask.
 10. The vapor deposition method according toclaim 1, wherein: the film formation substrate includes an alignmentmarker for use in alignment between the vapor deposition mask and thefilm formation substrate; the step (B) involves, while carrying out thedeposition of the vapor deposition particle, adjusting respectivepositions of the film formation substrate and the vapor deposition maskrelative to each other by (i) observing respective positions of saidalignment marker included in the film formation substrate for use in thealignment between the vapor deposition mask and said vapor depositionfilm relative to each other with use of the alignment observing meansand (ii) adjusting the respective positions of said alignment markerincluded in the film formation substrate for use in the alignmentbetween the vapor deposition mask and said vapor deposition filmrelative to each other on a basis of a result of the observation,wherein the alignment observing means optically observes, in such amanner as to make no contact with said alignment marker included in thefilm formation substrate for use in the alignment between the vapordeposition mask or said vapor deposition film, the respective positionsof said alignment marker included in the film formation substrate foruse in the alignment between the vapor deposition mask and said vapordeposition film relative to each other; said alignment marker includedin the film formation substrate for use in the alignment between thevapor deposition mask is made of a material that reflects or absorbsultraviolet light and is provided inside a vapor deposition region forthe vapor deposition particle emitted from the vapor deposition source;the vapor deposition particle is made of a material that emits light byphotoluminesence; the step (B) involves depositing the vapor depositionparticle onto said alignment marker included in the film formationsubstrate for use in the alignment between the vapor deposition mask;the alignment observing means emits ultraviolet light to said alignmentmarker included in the film formation substrate for use in the alignmentbetween the vapor deposition mask and said vapor deposition film so asto observe the respective positions of said vapor deposition filmemitting light by photoluminesence due to the ultraviolet light and saidalignment marker included in the film formation substrate for use in thealignment between the vapor deposition mask; said alignment markerincluded in the film formation substrate for use in the alignmentbetween the vapor deposition mask includes in itself a plurality ofopenings; and the alignment observing means observes the respectivepositions of said alignment marker included in the film formationsubstrate for use in the alignment between the vapor deposition mask andsaid vapor deposition film relative to each other on a basis of a ratioin fluorescence intensity among the plurality of openings.
 11. The vapordeposition method according to claim 9, wherein: said alignment markerincluded in the film formation substrate for use in the alignmentbetween the vapor deposition mask is provided in a first region of thefilm formation substrate, the first region being a region in which saidat least the first one of the mask unit and the film formation substrateis moved relative to the second one thereof, from end to end along adirection in which at least the first one of the mask unit and the filmformation substrate is moved relative to the second one thereof.
 12. Thevapor deposition method according to claim 9, wherein: said alignmentmarker included in the film formation substrate for use in the alignmentbetween the vapor deposition mask is provided discontinuously; and saidalignment marker included in the film formation substrate for use in thealignment between the vapor deposition mask is discontinuous at aninterval that varies according to a position in the film formationsubstrate.
 13. The vapor deposition method according to claim 1,wherein: the step (B) involves (i) measuring the amount of the voidbetween the vapor deposition mask and the film formation substrate withuse of the void sensor and (ii) carrying out the deposition of the vapordeposition particle while adjusting the amount of the void between thevapor deposition mask and the film formation substrate to the uniformvoid on a basis of the measured void amount by moving, with use of theactuator and along an axis direction that connects the vapor depositionmask and the film formation substrate and that is perpendicular to thevapor deposition mask and the film formation substrate, at least one of(a) a portion of the mask unit which portion includes at least the vapordeposition mask or an entirety of the mask unit and (b) the filmformation substrate.
 14. The vapor deposition method according to claim1, wherein: the void sensor is an optical void sensor for measuring theamount of the void between the vapor deposition mask and the filmformation substrate by means of transmission through the film formationsubstrate.
 15. The vapor deposition method according to claim 14,wherein: the void sensor includes a plurality of void sensors arrangedin a direction perpendicular to a direction of the relative movement;the film formation substrate includes a plurality of transparent regionsfor measuring the void amount with use of the void sensors, thetransparent regions extending along the direction of the relativemovement and being arranged along the direction perpendicular to thedirection of the relative movement; and the step (B) involves measuringthe amount of the void between the vapor deposition mask and the filmformation substrate by means of the transmission through the filmformation substrate with use of the void sensors facing the transparentregions.
 16. The vapor deposition method according to claim 1, wherein:the step (B) involves sequentially depositing the vapor depositionparticle onto the vapor deposition region of the film formationsubstrate while continuously moving said at least the first one of themask unit and the film formation substrate relative to the second onethereof in the vapor deposition region of the film formation substrate.17. The vapor deposition method according to claim 1, wherein: the step(B) involves sequentially depositing the vapor deposition particle ontothe vapor deposition region of the film formation substrate by repeating(i) a step for moving said at least the first one of the mask unit andthe film formation substrate relative to the second one thereof so as toscan said at least the first one of the mask unit and the film formationsubstrate and (ii) a step for stopping the scan and depositing anadditional vapor deposition particle onto the vapor deposition region ofthe film formation substrate.
 18. The vapor deposition method accordingto claim 1, wherein: the vapor deposition mask is a rectangular vapordeposition mask having, (i) along a short-axis direction thereof, afirst side that is shorter than a width of a first side of the vapordeposition region of the film formation substrate which first side ofthe vapor deposition region extends along the short-axis direction ofthe vapor deposition mask and (ii) along a long-axis direction of thevapor deposition mask, a second side that is longer than a width of asecond side of the vapor deposition region of the film formationsubstrate which second side of the vapor deposition region extends alongthe second side of the vapor deposition mask.
 19. The vapor depositionmethod according to claim 1, wherein: the step (B) involvesreciprocating said at least the first one of the mask unit and the filmformation substrate.
 20. The vapor deposition method according to claim1, wherein: the step (B) involves alternating (i) the relative movementalong one side of the vapor deposition region of the film formationsubstrate and (ii) the relative movement along another side of the vapordeposition region of the film formation substrate, said another sidebeing orthogonal to said one side.
 21. The vapor deposition methodaccording to claim 1, wherein: the step (B) involves stopping theemission of the vapor deposition particle from the vapor depositionsource for a second region of the film formation substrate, the secondregion requiring no deposition of the vapor deposition particle.
 22. Thevapor deposition method according to claim 1, wherein: the mask unit isprovided so that the emission hole faces the opening of the vapordeposition mask in a one-to-one correspondence.
 23. The vapor depositionmethod according to claim 1, wherein: the step (A) involves aligning themask unit and the film formation substrate with each other so that themask unit is placed above the film formation substrate; and the step (B)involves sequentially depositing the vapor deposition particle onto thevapor deposition region of the film formation substrate by emitting thevapor deposition particle downward from the vapor deposition source. 24.The vapor deposition method according to claim 1, wherein: thedepositing the vapor deposition particle forms a predetermined patternof an organic layer for an organic electroluminescent device.